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MTFC8GAKAJCN-4MIT

Micron Technology

MTFC8GAKAJCN-4MIT by Micron Technology

MTFC8GAKAJCN-4MIT by Micron Technology is a 8GX8 MLC NAND flash memory with 52 MHz clock frequency. It operates in industrial temperature range (-40 to 85 °C) and has a memory density of 68719476736 bit. Ideal for applications requiring high-speed data storage in compact devices.

Median Price

$13.080

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 56 parts In-Stock

1+ parts

$13.080

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56

$13.080

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Component Sense

UK . 43,386 parts In-Stock

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Chip Stock

USA . 10,500 parts In-Stock

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10,500

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Cyclops Electronics Ltd

UK . 5,028 parts In-Stock

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5,028

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Vyrian

USA . 2,354 parts In-Stock

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2,354

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Digiode

USA . 1,854 parts In-Stock

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1,854

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NexGen Digital

USA . 1,005 parts In-Stock

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1,005

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J2 Sourcing AB

Sweden . 880 parts In-Stock

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880

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Dark Horse Electronics

USA . 313 parts In-Stock

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313

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Bristol Electronics

USA . 200 parts In-Stock

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200

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ComSIT Distribution GmbH

Germany . 70 parts In-Stock

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70

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BCID Electronics Ltd.

Israel . 10 parts In-Stock

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10

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Semi Source

USA . 6 parts In-Stock

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6

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Carlin Systems, Inc.

USA . 1 parts In-Stock

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1

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Distributors (Availability)

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Advanced Electronics

New Zealand . 10,000 parts In-Stock

1+ parts

$3.010

100+ parts

$2.859

1k+ parts

$2.859

10k+ parts

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10,000

$3.010

$2.859

$2.859

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Aztec Data Supply Inc.

USA . 4,442 parts In-Stock

1+ parts

$4.140

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4,442

$4.140

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Ampacity Inc.

Singapore . 455 parts In-Stock

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$5.000

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455

$5.000

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Continental Prestige Electronics

USA . 825 parts In-Stock

1+ parts

$12.140

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$11.897

825

$12.140

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$11.897

AZTECH Wire

Italy . 275 parts In-Stock

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$17.242

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275

$17.242

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Semicontronic

India . 4,765 parts In-Stock

1+ parts

$21.000

100+ parts

$20.475

1k+ parts

$20.370

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4,765

$21.000

$20.475

$20.370

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Corohmni

South Africa . 1,168 parts In-Stock

1+ parts

$67.732

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$67.732

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A-Z Elektronik GmbH

Germany . 9,107 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 5,000 parts In-Stock

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S.R.D Solutions

India . 4,000 parts In-Stock

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Kepictronics

USA . 2,000 parts In-Stock

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RC Electronics

USA . 1,506 parts In-Stock

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Argo Parts USA

USA . 1,133 parts In-Stock

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Corphita

USA . 826 parts In-Stock

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826

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Robosynatics

Brazil . 312 parts In-Stock

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ChipstoGo Electronic ltd

UK . 80 parts In-Stock

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80

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Formix International (Excess)

India . 63 parts In-Stock

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Authorized Procurement Solutions

USA . 55 parts In-Stock

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55

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Netroflash

USA . 50 parts In-Stock

1+ parts

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$12.818

1k+ parts

$12.426

10k+ parts

$12.164

50

-

$12.818

$12.426

$12.164

Modulus Dynamics

Lithuania . 20 parts In-Stock

1+ parts

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20

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Overview

Unleash the power of cutting-edge technology with Micron Technology's MTFC8GAKAJCN-4MIT Flash Memory. Designed with precision and reliability in mind, this product offers unparalleled performance for a wide range of applications. With a focus on quality and innovation, Micron Technology is a trusted manufacturer known for delivering top-of-the-line products that exceed expectations. Experience the value and benefits of this advanced Flash Memory solution, providing customers with seamless operation, fast data transfer speeds, and enhanced storage capabilities. Elevate your projects with the MTFC8GAKAJCN-4MIT and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the flash memory, ensuring a longer lifespan.

Surface Mount: YES

Ease of installation and compatibility with modern circuit board design.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer speeds and improved efficiency.

Maximum Operating Temperature: 85 °C

Can withstand high operating temperatures, making it suitable for industrial applications.

Organization: 8GX8

Organized in a grid array of 8 columns and 8 rows, allowing for efficient data storage and retrieval.

Technology: CMOS

CMOS technology offers low power consumption and high speed performance.

Memory IC Type: FLASH CARD

Flash memory technology provides non-volatile storage, ideal for storing important data safely.

Technical Specifications

Flash Memory MTFC8GAKAJCN-4MIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

52 MHz

Command User Interface:

NO

Data Polling:

NO

JESD-30 Code:

R-PBGA-B153

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

68719476736 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

8589934592 words

No. of Words Code:

8G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

MLC NAND TYPE

Width:

11.5 mm

Trade Compliance

MTFC8GAKAJCN-4MIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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