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MTFC8GAKAJCN-1MWT

Micron Technology

MTFC8GAKAJCN-1MWT by Micron Technology

MTFC8GAKAJCN-1MWT by Micron Technology is a 8GX8 MLC NAND flash memory with 68719476736 bit density. It operates at 3.3V, has a temperature range of -25 to 85 °C, and uses synchronous mode. Ideal for applications requiring high memory capacity in compact devices.

Median Price

$8.180

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 85 parts In-Stock

1+ parts

$8.180

100+ parts

-

1k+ parts

-

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85

$8.180

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Avnet

USA . 85 parts In-Stock

1+ parts

$8.400

100+ parts

-

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-

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85

$8.400

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Verical

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$5.423

10k+ parts

$5.423

1,000

-

-

$5.423

$5.423

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,784 parts In-Stock

1+ parts

$7.771

100+ parts

-

1k+ parts

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1,784

$7.771

-

-

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Nova Conductors

Japan . 200 parts In-Stock

1+ parts

$13.802

100+ parts

-

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200

$13.802

-

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BCID Electronics Ltd.

Israel . 14,328 parts In-Stock

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14,328

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Cyclops Electronics Ltd

UK . 9,425 parts In-Stock

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9,425

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Vyrian

USA . 6,549 parts In-Stock

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6,549

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Chip Stock

USA . 5,700 parts In-Stock

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5,700

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Component Sense

UK . 1,234 parts In-Stock

1+ parts

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1,234

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ComSIT Distribution GmbH

Germany . 839 parts In-Stock

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839

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Martec Srl

Italy . 313 parts In-Stock

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313

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NAC Semi

USA . 110 parts In-Stock

1+ parts

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100+ parts

$10.010

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110

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$10.010

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Semtec, LLC

USA . 81 parts In-Stock

1+ parts

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81

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Sensible Micro Corp

USA . 53 parts In-Stock

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53

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Atlantic Semiconductor

USA . 45 parts In-Stock

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45

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Goldney Electronics S.L.

Spain . 6 parts In-Stock

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6

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PC Components Company LLC

USA . 2 parts In-Stock

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2

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Bristol Electronics

USA . 1 parts In-Stock

1+ parts

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1

-

-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,639 parts In-Stock

1+ parts

$1.970

100+ parts

-

1k+ parts

-

10k+ parts

-

4,639

$1.970

-

-

-

Semicontronic

India . 648 parts In-Stock

1+ parts

$4.610

100+ parts

$4.495

1k+ parts

$4.472

10k+ parts

-

648

$4.610

$4.495

$4.472

-

Ampacity Inc.

Singapore . 213 parts In-Stock

1+ parts

$4.610

100+ parts

-

1k+ parts

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213

$4.610

-

-

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Corphita

USA . 1,741 parts In-Stock

1+ parts

$7.362

100+ parts

-

1k+ parts

-

10k+ parts

-

1,741

$7.362

-

-

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AZTECH Wire

Italy . 409 parts In-Stock

1+ parts

$11.900

100+ parts

-

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409

$11.900

-

-

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Continental Prestige Electronics

USA . 1,492 parts In-Stock

1+ parts

$13.802

100+ parts

-

1k+ parts

-

10k+ parts

$13.526

1,492

$13.802

-

-

$13.526

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$13.802

100+ parts

-

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1,000

$13.802

-

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Corohmni

South Africa . 966 parts In-Stock

1+ parts

$39.561

100+ parts

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966

$39.561

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A-Z Elektronik GmbH

Germany . 19,351 parts In-Stock

1+ parts

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19,351

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Speed Components Ltd (Excess)

Israel . 15,414 parts In-Stock

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15,414

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Metaverse IC Inc.

Canada . 10,000 parts In-Stock

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10,000

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GreenTree Electronics

Israel . 4,560 parts In-Stock

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4,560

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S.R.D Solutions

India . 3,000 parts In-Stock

1+ parts

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3,000

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QUARKTWIN TECHNOLOGY LTD

USA . 2,931 parts In-Stock

1+ parts

-

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2,931

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Argo Parts USA

USA . 2,868 parts In-Stock

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2,868

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Assy Fe

Spain . 1,220 parts In-Stock

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1,220

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iodParts Technologies Inc.

India . 750 parts In-Stock

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750

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Component Connect

USA . 313 parts In-Stock

1+ parts

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313

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Lucentia Tech

USA . 300 parts In-Stock

1+ parts

-

100+ parts

$177.345

1k+ parts

$177.345

10k+ parts

$177.345

300

-

$177.345

$177.345

$177.345

Robosynatics

Brazil . 100 parts In-Stock

1+ parts

-

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100

-

-

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Kepictronics

USA . 94 parts In-Stock

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94

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Formix International (Excess)

India . 54 parts In-Stock

1+ parts

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54

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Overview

Unlock the power of cutting-edge technology with Micron Technology's MTFC8GAKAJCN-1MWT Flash Memory. Crafted with precision and expertise, this product offers unparalleled performance and reliability in a variety of applications. From faster data transfer speeds to enhanced storage capacity, this flash memory delivers exceptional value and advantages to customers looking for top-notch quality. Trust Micron Technology to provide you with the best-in-class solution for your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable housing for the flash memory, ensuring it can withstand everyday use and transportation.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Operating Mode: SYNCHRONOUS

Enables fast and synchronized data transfer, improving overall performance and efficiency.

Nominal Supply Voltage / Vsup (V): 3.3

Offers a standard voltage level that is compatible with many devices, making it versatile and widely usable.

No. of Terminals: 153

Provides ample connectivity options for interfacing with other components, enhancing versatility and compatibility.

Maximum Operating Temperature: 85 °C

Ensures reliable operation even in high-temperature environments, making it suitable for a variety of applications.

Technology: CMOS

Utilizes CMOS technology for efficient power consumption and high-speed performance, making it energy-efficient and reliable.

Technical Specifications

Flash Memory MTFC8GAKAJCN-1MWT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Additional Features:

ALSO AVAILABE WITH TAPE AND REEL

Command User Interface:

NO

Data Polling:

NO

JESD-30 Code:

R-PBGA-B153

Length:

13 mm

Memory Density:

68719476736 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

8589934592 words

No. of Words Code:

8G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

8GX8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

MLC NAND TYPE

Width:

11.5 mm

Trade Compliance

MTFC8GAKAJCN-1MWT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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