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MTFC32GAPALNA-AIT

Micron Technology

MTFC32GAPALNA-AIT by Micron Technology

Micron Technology's MTFC32GAPALNA-AIT is a 32GX8 NAND flash memory with 34359738368 words capacity. Operating at up to 200 MHz, it has a thin profile grid array package suitable for industrial applications. With hardware write protection and parallel interface, it offers reliable data storage in temperatures ranging from -40°C to 85°C.

Median Price

$32.045

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 79 parts In-Stock

1+ parts

$32.045

100+ parts

-

1k+ parts

-

10k+ parts

-

79

$32.045

-

-

-

Chip Stock

USA . 18,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

18,200

-

-

-

-

Cyclops Electronics Ltd

UK . 6,313 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,313

-

-

-

-

Vyrian

USA . 6,145 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,145

-

-

-

-

Digiode

USA . 1,320 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,320

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 2,425 parts In-Stock

1+ parts

$3.310

100+ parts

-

1k+ parts

-

10k+ parts

-

2,425

$3.310

-

-

-

Corohmni

South Africa . 972 parts In-Stock

1+ parts

$3.674

100+ parts

-

1k+ parts

-

10k+ parts

-

972

$3.674

-

-

-

Ampacity Inc.

Singapore . 265 parts In-Stock

1+ parts

$4.000

100+ parts

-

1k+ parts

-

10k+ parts

-

265

$4.000

-

-

-

Semicontronic

India . 341 parts In-Stock

1+ parts

$12.000

100+ parts

$11.700

1k+ parts

$11.640

10k+ parts

-

341

$12.000

$11.700

$11.640

-

AZTECH Wire

Italy . 601 parts In-Stock

1+ parts

$13.086

100+ parts

-

1k+ parts

-

10k+ parts

-

601

$13.086

-

-

-

Continental Prestige Electronics

USA . 1,276 parts In-Stock

1+ parts

$28.410

100+ parts

-

1k+ parts

-

10k+ parts

$27.842

1,276

$28.410

-

-

$27.842

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$32.045

100+ parts

-

1k+ parts

-

10k+ parts

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2,000

$32.045

-

-

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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5,000

-

-

-

-

GreenTree Electronics

Israel . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,000

-

-

-

-

Corphita

USA . 1,587 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,587

-

-

-

-

Argo Parts USA

USA . 1,577 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,577

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-

-

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Microchip USA

USA . 219 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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219

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-

Overview

Unlock the power of cutting-edge technology with Micron Technology's MTFC32GAPALNA-AIT Flash Memory. Built with precision and innovation, this product offers unparalleled performance for a wide range of applications. From industrial to consumer electronics, this flash memory is designed to meet your storage needs efficiently and reliably. With high-quality components and advanced features, Micron Technology ensures that you get the best value for your investment. Experience seamless data storage and retrieval like never before with the MTFC32GAPALNA-AIT.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material ensures durability and reliability in various operating conditions.

Surface Mount: YES

Surface mount feature allows for easy and efficient installation on circuit boards.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures efficient data transfer and processing.

Maximum Operating Temperature: 85 °C

High maximum operating temperature allows for use in a wide range of environments.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures reliable performance even in extreme cold conditions.

Write Protection: HARDWARE

Hardware write protection feature ensures data security and prevents accidental data loss.

Maximum Clock Frequency (fCLK): 200 MHz

High clock frequency enables fast data access and processing.

Memory Width: 8

8-bit memory width allows for efficient data storage and retrieval.

Memory Density: 274877906944 bit

High memory density provides ample storage capacity for data-intensive applications.

Memory IC Type: FLASH CARD

Flash card type memory IC is suitable for a wide range of applications and offers fast data access speeds.

Technical Specifications

Flash Memory MTFC32GAPALNA-AIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

200 MHz

Command User Interface:

NO

Data Polling:

NO

JESD-30 Code:

R-PBGA-B100

JESD-609 Code:

e1

Length:

18 mm

Memory Density:

274877906944 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

100

No. of Words:

34359738368 words

No. of Words Code:

32G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA100,10X15,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

NAND TYPE

Width:

14 mm

Write Protection:

HARDWARE

Trade Compliance

MTFC32GAPALNA-AIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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