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MTFC8GAMALBH-AAT

Micron Technology

MTFC8GAMALBH-AAT by Micron Technology

MTFC8GAMALBH-AAT by Micron Technology is a NAND flash memory with 8GX8 organization, 68719476736 bit memory density, and 105°C max operating temp. It is suitable for industrial applications requiring high-speed data storage in compact devices.

Median Price

$13.810

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,332 parts In-Stock

1+ parts

$11.620

100+ parts

$8.130

1k+ parts

-

10k+ parts

-

1,332

$11.620

$8.130

-

-

Mouser Electronics

USA . 4,939 parts In-Stock

1+ parts

$13.810

100+ parts

$10.910

1k+ parts

$10.680

10k+ parts

-

4,939

$13.810

$10.910

$10.680

-

Element14

Singapore . 14 parts In-Stock

1+ parts

$14.410

100+ parts

$11.390

1k+ parts

-

10k+ parts

-

14

$14.410

$11.390

-

-

Arrow

USA . 2,506 parts In-Stock

1+ parts

$15.941

100+ parts

$15.941

1k+ parts

$15.941

10k+ parts

$15.941

2,506

$15.941

$15.941

$15.941

$15.941

EBV Elektronik

Germany . 6,080 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,080

-

-

-

-

Verical

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$10.369

10k+ parts

-

2,000

-

-

$10.369

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,247 parts In-Stock

1+ parts

$11.039

100+ parts

-

1k+ parts

-

10k+ parts

-

1,247

$11.039

-

-

-

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$18.130

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$18.130

-

-

-

Chip Stock

USA . 11,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,500

-

-

-

-

NAC Semi

USA . 9,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$12.310

9,400

-

-

-

$12.310

Vyrian

USA . 6,714 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,714

-

-

-

-

Bristol Electronics

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

ComSIT Distribution GmbH

Germany . 190 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

190

-

-

-

-

Goldney Electronics S.L.

Spain . 14 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

14

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 2,226 parts In-Stock

1+ parts

$2.160

100+ parts

-

1k+ parts

-

10k+ parts

-

2,226

$2.160

-

-

-

Corohmni

South Africa . 87 parts In-Stock

1+ parts

$3.488

100+ parts

-

1k+ parts

-

10k+ parts

-

87

$3.488

-

-

-

Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$5.222

100+ parts

$4.961

1k+ parts

$4.961

10k+ parts

-

150

$5.222

$4.961

$4.961

-

Ampacity Inc.

Singapore . 6,431 parts In-Stock

1+ parts

$8.810

100+ parts

-

1k+ parts

-

10k+ parts

-

6,431

$8.810

-

-

-

Semicontronic

India . 2,462 parts In-Stock

1+ parts

$8.810

100+ parts

$8.590

1k+ parts

$8.546

10k+ parts

-

2,462

$8.810

$8.590

$8.546

-

Corphita

USA . 1,164 parts In-Stock

1+ parts

$10.458

100+ parts

-

1k+ parts

-

10k+ parts

-

1,164

$10.458

-

-

-

Continental Prestige Electronics

USA . 6,503 parts In-Stock

1+ parts

$17.619

100+ parts

-

1k+ parts

-

10k+ parts

$17.267

6,503

$17.619

-

-

$17.267

A-Z Elektronik GmbH

Germany . 6,080 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,080

-

-

-

-

Infinite Electronics LLP (Excess)

. 2,008 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,008

-

-

-

-

Argo Parts USA

USA . 462 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

462

-

-

-

-

Kepictronics

USA . 294 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

294

-

-

-

-

Overview

Elevate your storage capabilities with the MTFC8GAMALBH-AAT from Micron Technology. This high-quality flash memory device offers unparalleled reliability and performance, making it the perfect solution for a wide range of applications. Whether you're looking to enhance the speed of your devices or increase their capacity, this product delivers exceptional value, benefits, and advantages to customers. Trust in Micron Technology's expertise in producing cutting-edge memory solutions and unlock new possibilities with the MTFC8GAMALBH-AAT.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material that can withstand various environmental conditions, making the product reliable for long-term use.

Surface Mount: YES

Easy to install on PCBs, saving time and effort during assembly.

Operating Mode: SYNCHRONOUS

Allows for faster data transfer and more efficient operation.

Maximum Operating Temperature: 105 °C

Suitable for industrial applications where high temperatures are common.

Memory IC Type: FLASH CARD

Ideal for storing large amounts of data securely and efficiently.

Technical Specifications

Flash Memory MTFC8GAMALBH-AAT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PBGA-B153

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

68719476736 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

8589934592 words

No. of Words Code:

8G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NAND TYPE

Width:

11.5 mm

Trade Compliance

MTFC8GAMALBH-AAT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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