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MTFC16GAPALBH-IT

Micron Technology

MTFC16GAPALBH-IT by Micron Technology

MTFC16GAPALBH-IT by Micron Technology is a 16GX8 NAND flash memory with 17179869184 words capacity. Operating at up to 200 MHz, it has a thin profile and fine pitch package style suitable for industrial applications. With a temperature range of -40 to 85 °C, this flash card offers high memory density and synchronous operation.

Median Price

$14.073

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 225 parts In-Stock

1+ parts

$14.073

100+ parts

$12.246

1k+ parts

$12.013

10k+ parts

$12.013

225

$14.073

$12.246

$12.013

$12.013

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,060 parts In-Stock

1+ parts

$13.369

100+ parts

-

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-

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1,060

$13.369

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$21.497

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-

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50

$21.497

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Chip Stock

USA . 15,611 parts In-Stock

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15,611

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Cyclops Electronics Ltd

UK . 8,936 parts In-Stock

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8,936

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Component Sense

UK . 5,577 parts In-Stock

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5,577

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J2 Sourcing AB

Sweden . 5,070 parts In-Stock

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5,070

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Vyrian

USA . 2,836 parts In-Stock

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2,836

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Prism Electronics

USA . 5 parts In-Stock

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5

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Sensible Micro Corp

USA . 4 parts In-Stock

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4

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 320 parts In-Stock

1+ parts

$2.900

100+ parts

-

1k+ parts

-

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320

$2.900

-

-

-

Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$3.819

100+ parts

$3.628

1k+ parts

$3.628

10k+ parts

-

50

$3.819

$3.628

$3.628

-

Corohmni

South Africa . 589 parts In-Stock

1+ parts

$4.588

100+ parts

-

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589

$4.588

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AZTECH Wire

Italy . 459 parts In-Stock

1+ parts

$11.594

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459

$11.594

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Ampacity Inc.

Singapore . 41 parts In-Stock

1+ parts

$11.960

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41

$11.960

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Corphita

USA . 1,585 parts In-Stock

1+ parts

$12.666

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1,585

$12.666

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Continental Prestige Electronics

USA . 6,172 parts In-Stock

1+ parts

$18.340

100+ parts

-

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$17.973

6,172

$18.340

-

-

$17.973

Semicontronic

India . 23 parts In-Stock

1+ parts

$26.040

100+ parts

$25.389

1k+ parts

$25.259

10k+ parts

-

23

$26.040

$25.389

$25.259

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Futuretech Components

Singapore . 12,091 parts In-Stock

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12,091

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iBuyXS LLC

. 7,000 parts In-Stock

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Perfect Parts

USA . 5,659 parts In-Stock

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5,659

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A-Z Elektronik GmbH

Germany . 5,377 parts In-Stock

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Robosynatics

Brazil . 5,000 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Lucentia Tech

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

$12.354

1k+ parts

$12.354

10k+ parts

$12.354

5,000

-

$12.354

$12.354

$12.354

RC Electronics

USA . 2,640 parts In-Stock

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GreenTree Electronics

Israel . 2,400 parts In-Stock

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Infinite Electronics LLP (Excess)

. 2,004 parts In-Stock

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2,004

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$21.067

1k+ parts

$20.422

10k+ parts

$19.992

2,000

-

$21.067

$20.422

$19.992

Argo Parts USA

USA . 468 parts In-Stock

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468

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Microchip USA

USA . 447 parts In-Stock

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447

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Glotronic Ltd.

UK . 266 parts In-Stock

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266

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Overview

Experience the reliability and performance of Micron Technology with the MTFC16GAPALBH-IT Flash Memory. This top-of-the-line product offers unparalleled quality and durability, making it ideal for a wide range of applications. With its innovative technology and advanced features, this flash memory provides customers with exceptional value and benefits. Trust Micron Technology to deliver superior products that meet your storage needs efficiently and effectively.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer and better overall performance.

Maximum Clock Frequency (fCLK): 200 MHz

High clock frequency ensures efficient processing of data and quick access to memory.

Memory Density: 137438953472 bit

High memory density allows for storing a large amount of data in a compact form factor.

Technical Specifications

Flash Memory MTFC16GAPALBH-IT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

200 MHz

JESD-30 Code:

R-PBGA-B153

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

137438953472 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

17179869184 words

No. of Words Code:

16G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16GX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NAND TYPE

Width:

11.5 mm

Trade Compliance

MTFC16GAPALBH-IT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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