Loading...

MT25QL256ABA8ESF-0SITTR

Micron Technology

MT25QL256ABA8ESF-0SITTR by Micron Technology

Micron Technology's MT25QL256ABA8ESF-0SITTR is a 32MX8 NOR flash memory with 268435456-bit density. Operating at 133 MHz, it offers 100000 Write/Erase Cycles endurance and SPI serial bus type for applications requiring high-speed data storage in compact devices.

Median Price

$4.030

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,609 parts In-Stock

1+ parts

$4.030

100+ parts

$3.480

1k+ parts

$3.160

10k+ parts

$3.070

2,609

$4.030

$3.480

$3.160

$3.070

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,761 parts In-Stock

1+ parts

$4.892

100+ parts

-

1k+ parts

-

10k+ parts

-

1,761

$4.892

-

-

-

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$4.946

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$4.946

-

-

-

Chip Stock

USA . 16,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

16,200

-

-

-

-

Cyclops Electronics Ltd

UK . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Vyrian

USA . 3,813 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,813

-

-

-

-

ComSIT Distribution GmbH

Germany . 3,761 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,761

-

-

-

-

Bristol Electronics

USA . 562 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

562

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 30 parts In-Stock

1+ parts

$2.710

100+ parts

$2.574

1k+ parts

$2.574

10k+ parts

-

30

$2.710

$2.574

$2.574

-

Semicontronic

India . 6,596 parts In-Stock

1+ parts

$3.430

100+ parts

$3.344

1k+ parts

$3.327

10k+ parts

-

6,596

$3.430

$3.344

$3.327

-

Ampacity Inc.

Singapore . 2,669 parts In-Stock

1+ parts

$3.770

100+ parts

-

1k+ parts

-

10k+ parts

-

2,669

$3.770

-

-

-

Corphita

USA . 2,067 parts In-Stock

1+ parts

$4.635

100+ parts

-

1k+ parts

-

10k+ parts

-

2,067

$4.635

-

-

-

Corohmni

South Africa . 1,014 parts In-Stock

1+ parts

$4.646

100+ parts

-

1k+ parts

-

10k+ parts

-

1,014

$4.646

-

-

-

Aztec Data Supply Inc.

USA . 33,389 parts In-Stock

1+ parts

$4.680

100+ parts

-

1k+ parts

-

10k+ parts

-

33,389

$4.680

-

-

-

Continental Prestige Electronics

USA . 268 parts In-Stock

1+ parts

$4.946

100+ parts

-

1k+ parts

-

10k+ parts

$4.847

268

$4.946

-

-

$4.847

Argo Parts USA

USA . 3,117 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,117

-

-

-

-

Lucentia Tech

USA . 1,350 parts In-Stock

1+ parts

-

100+ parts

$0.541

1k+ parts

$0.541

10k+ parts

$0.541

1,350

-

$0.541

$0.541

$0.541

Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$4.847

1k+ parts

$4.699

10k+ parts

$4.600

1,000

-

$4.847

$4.699

$4.600

Robosynatics

Brazil . 950 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

950

-

-

-

-

iodParts Technologies Inc.

India . 647 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

647

-

-

-

-

Perfect Parts

USA . 168 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

168

-

-

-

-

Overview

Experience lightning-fast data transfer speeds and reliable performance with the MT25QL256ABA8ESF-0SITTR by Micron Technology. As a leader in flash memory technology, Micron ensures top-notch quality and cutting-edge innovation in every product they create. This compact flash memory device is perfect for a wide range of applications, from consumer electronics to industrial systems. With high endurance and versatile write protection options, this product offers exceptional value and peace of mind to customers looking for a dependable memory solution. Trust Micron to deliver superior quality and performance for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection to the flash memory chip, making it suitable for various environmental conditions.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space and simplifying the assembly process.

Package Shape: RECTANGULAR

Rectangular shape is a common and efficient form factor for electronic components, enabling easy placement and alignment on PCBs.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred and processed in a coordinated manner, optimizing performance and reliability.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V ensures compatibility with standard power sources and reduces power consumption.

No. of Terminals: 16

Having 16 terminals allows for efficient connectivity and communication with other components in the system.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and facilitates integration in compact electronic devices.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, the flash memory chip can withstand elevated temperatures without performance degradation.

Organization: 32MX8

The 32MX8 organization indicates a high memory capacity and data width, allowing for storing and accessing large amounts of data efficiently.

Output Characteristics: 3-STATE

3-STATE output enables the flash memory chip to tri-state its outputs, supporting bus sharing and reducing bus contention.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures reliable performance even in extreme cold conditions.

Terminal Position: DUAL

Dual terminal position provides redundancy and improves signal integrity for reliable data transfer.

Write Protection: HARDWARE/SOFTWARE

Having both hardware and software write protection options adds an extra layer of security to prevent accidental data loss or corruption.

Maximum Seated Height: 2.65 mm

Low maximum seated height allows for a thinner profile in the overall system design, particularly for slim electronic devices.

Maximum Clock Frequency (fCLK): 133 MHz

Operating at a high maximum clock frequency of 133 MHz enables fast data transfer rates and efficient system performance.

Width: 7.5 mm

Narrow width of 7.5 mm allows for compact placement on the PCB, saving valuable board space for other components.

Minimum Supply Voltage (Vsup): 2.7 V

Having a low minimum supply voltage of 2.7V ensures compatibility with a wide range of power sources and reduces power consumption.

Maximum Time At Peak Reflow Temperature (s): 30

The flash memory chip can withstand peak reflow temperatures for up to 30 seconds, ensuring proper soldering during assembly.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, the flash memory chip can undergo high-temperature soldering processes without damage.

Type: NOR TYPE

Being a NOR type flash memory offers fast random access times and high read speeds, making it suitable for applications requiring quick data retrieval.

Length: 10.3 mm

Length of 10.3 mm provides a compact form factor for the flash memory chip, allowing for easy integration in space-constrained designs.

Programming Voltage (V): 3

Operating at a programming voltage of 3V ensures compatibility with standard programming interfaces and enhances reliability during data writing.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and efficient operation, making the flash memory chip energy-efficient and reliable.

Parallel or Serial: SERIAL

Serial communication enables sequential data transfer and simplifies the interface design, improving efficiency in data storage and retrieval.

Terminal Form: GULL WING

Gull wing terminal form provides mechanical strength and reliable solder connections, ensuring stable electrical contact during operation.

Maximum Supply Current: 35 mA

With a maximum supply current of 35mA, the flash memory chip operates efficiently without drawing excessive power from the system.

No. of Words: 268435456 words

Having a high number of words indicates a large memory capacity for storing extensive data sets and programs.

Memory Width: 8

Memory width of 8 bits allows for processing data in parallel, enhancing data transfer speeds and overall system performance.

Minimum Data Retention Time: 20

The minimum data retention time of 20 years ensures long-term storage and preservation of data without loss or corruption.

Terminal Pitch: 1.27 mm

Having a terminal pitch of 1.27mm enables precise and reliable connections with external circuitry, ensuring optimal signal integrity.

No. of Words Code: 32M

Indicating a code size of 32M words, the flash memory chip can accommodate a significant amount of program instructions and data.

Maximum Supply Voltage (Vsup): 3.6 V

With a maximum supply voltage of 3.6V, the flash memory chip can handle voltage fluctuations and variations in the power supply.

Endurance: 100000 Write/Erase Cycles

Having an endurance of 100,000 write/erase cycles ensures reliable and long-lasting data storage with minimal risk of data corruption.

Serial Bus Type: SPI

Utilizing the SPI (Serial Peripheral Interface) bus type allows for fast and efficient serial communication, enhancing data transfer rates and system performance.

Memory Density: 268435456 bit

The high memory density of 268,435,456 bits indicates a large storage capacity for handling extensive data requirements in diverse applications.

Memory IC Type: FLASH

Being a Flash memory IC type offers non-volatile data storage, fast read/write speeds, and high reliability, making it ideal for various embedded systems.

Maximum Standby Current: 0.000035 Amp

With a low maximum standby current of 0.000035 Amp, the flash memory chip consumes minimal power in idle or standby modes, conserving energy.

Technical Specifications

Flash Memory MT25QL256ABA8ESF-0SITTR attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

133 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G16

Length:

10.3 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

16

No. of Words:

268435456 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Maximum Seated Height:

2.65 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000035 Amp

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

7.5 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

MT25QL256ABA8ESF-0SITTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20