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MTFC16GAPALBH-AATTR

Micron Technology

MTFC16GAPALBH-AATTR by Micron Technology

MTFC16GAPALBH-AATTR by Micron Technology is a 16GX8 NAND flash memory with 17179869184 words capacity. It operates synchronously at up to 200 MHz clock frequency, suitable for applications requiring high-speed data storage and retrieval. With a thin profile and fine pitch grid array package style, it offers compact design flexibility for various electronic devices.

Median Price

$24.570

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 686 parts In-Stock

1+ parts

$24.570

100+ parts

$19.670

1k+ parts

$19.270

10k+ parts

-

686

$24.570

$19.670

$19.270

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$20.312

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$20.312

-

-

-

Digiode

USA . 1,750 parts In-Stock

1+ parts

$22.240

100+ parts

-

1k+ parts

-

10k+ parts

-

1,750

$22.240

-

-

-

Chip Stock

USA . 20,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20,800

-

-

-

-

Vyrian

USA . 4,116 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,116

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 217 parts In-Stock

1+ parts

$5.592

100+ parts

-

1k+ parts

-

10k+ parts

-

217

$5.592

-

-

-

AZTECH Wire

Italy . 228 parts In-Stock

1+ parts

$8.318

100+ parts

-

1k+ parts

-

10k+ parts

-

228

$8.318

-

-

-

Continental Prestige Electronics

USA . 6,673 parts In-Stock

1+ parts

$20.312

100+ parts

-

1k+ parts

-

10k+ parts

$19.906

6,673

$20.312

-

-

$19.906

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$20.312

100+ parts

-

1k+ parts

$19.297

10k+ parts

$18.891

2,000

$20.312

-

$19.297

$18.891

Semicontronic

India . 252 parts In-Stock

1+ parts

$20.880

100+ parts

$20.358

1k+ parts

$20.254

10k+ parts

-

252

$20.880

$20.358

$20.254

-

Ampacity Inc.

Singapore . 39 parts In-Stock

1+ parts

$20.880

100+ parts

-

1k+ parts

-

10k+ parts

-

39

$20.880

-

-

-

Corphita

USA . 2,223 parts In-Stock

1+ parts

$21.069

100+ parts

-

1k+ parts

-

10k+ parts

-

2,223

$21.069

-

-

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Argo Parts USA

USA . 2,040 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,040

-

-

-

-

Overview

Unlock endless possibilities with the MTFC16GAPALBH-AATTR by Micron Technology. Crafted with precision and expertise, this flash memory device offers unparalleled performance and reliability for a wide range of applications. Whether you're looking to enhance the speed and efficiency of your electronic devices or streamline data storage processes, this product is designed to meet your needs. Experience seamless operation and cutting-edge technology with Micron's innovative solution. Upgrade your systems today and revolutionize the way you work.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material for long-lasting use

Surface Mount: YES

Easy to install and compatible with modern electronics

Operating Mode: SYNCHRONOUS

Ensures synchronized data transfer for efficient performance

Maximum Operating Temperature: 105 °C

Can operate under high temperature conditions without issues

Technology: CMOS

Utilizes advanced CMOS technology for efficient power consumption

Memory IC Type: FLASH CARD

Ideal for storing and transferring large amounts of data quickly

Technical Specifications

Flash Memory MTFC16GAPALBH-AATTR attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

200 MHz

JESD-30 Code:

R-PBGA-B153

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

137438953472 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

17179869184 words

No. of Words Code:

16G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NAND TYPE

Width:

11.5 mm

Trade Compliance

MTFC16GAPALBH-AATTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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