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MT29F2G08ABAGAWP-IT:G

Micron Technology

MT29F2G08ABAGAWP-IT:G by Micron Technology

Micron Technology's MT29F2G08ABAGAWP-IT:G is an industrial-grade SLC NAND flash memory with 256Mx8 organization, operating from -40 to 85°C. It offers a memory density of 2147483648 bits and operates in asynchronous mode. Ideal for applications requiring high reliability and performance in harsh environments.

Median Price

$4.830

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

MT29F2G08ABAGAWP-IT:G by Micron Technology
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Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 407 parts In-Stock

1+ parts

$1.230

100+ parts

$0.957

1k+ parts

$0.938

10k+ parts

-

407

$1.230

$0.957

$0.938

-

Arrow

USA . 960 parts In-Stock

1+ parts

$1.779

100+ parts

$1.372

1k+ parts

$1.259

10k+ parts

-

960

$1.779

$1.372

$1.259

-

Mouser Electronics

USA . 1,236 parts In-Stock

1+ parts

$7.880

100+ parts

-

1k+ parts

-

10k+ parts

-

1,236

$7.880

-

-

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Newark

USA . 473 parts In-Stock

1+ parts

$10.980

100+ parts

-

1k+ parts

-

10k+ parts

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473

$10.980

-

-

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Element14

Singapore . 195 parts In-Stock

1+ parts

$12.110

100+ parts

-

1k+ parts

-

10k+ parts

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195

$12.110

-

-

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Verical

USA . 374,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.165

10k+ parts

$1.117

374,000

-

-

$1.165

$1.117

EBV Elektronik

Germany . 15,360 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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15,360

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-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,487 parts In-Stock

1+ parts

$0.832

100+ parts

-

1k+ parts

-

10k+ parts

-

2,487

$0.832

-

-

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$2.320

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$2.320

-

-

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Cyclops Electronics Ltd

UK . 53,840 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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53,840

-

-

-

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IBS Electronics

USA . 32,880 parts In-Stock

1+ parts

-

100+ parts

$76.436

1k+ parts

-

10k+ parts

-

32,880

-

$76.436

-

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Vyrian

USA . 2,938 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,938

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-

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NAC Semi

USA . 960 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.470

10k+ parts

-

960

-

-

$2.470

-

Dan-Mar Components

USA . 471 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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471

-

-

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Bristol Electronics

USA . 25 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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25

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 4,435 parts In-Stock

1+ parts

$0.740

100+ parts

$0.722

1k+ parts

$0.718

10k+ parts

-

4,435

$0.740

$0.722

$0.718

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Ampacity Inc.

Singapore . 3,317 parts In-Stock

1+ parts

$0.740

100+ parts

-

1k+ parts

-

10k+ parts

-

3,317

$0.740

-

-

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Corphita

USA . 309 parts In-Stock

1+ parts

$0.788

100+ parts

-

1k+ parts

-

10k+ parts

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309

$0.788

-

-

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$2.274

100+ parts

-

1k+ parts

$2.183

10k+ parts

-

500

$2.274

-

$2.183

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Argo Parts USA

USA . 3,515 parts In-Stock

1+ parts

$2.320

100+ parts

-

1k+ parts

-

10k+ parts

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3,515

$2.320

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Aztec Data Supply Inc.

USA . 2,260 parts In-Stock

1+ parts

$2.460

100+ parts

-

1k+ parts

-

10k+ parts

-

2,260

$2.460

-

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Continental Prestige Electronics

USA . 445 parts In-Stock

1+ parts

$2.600

100+ parts

$1.830

1k+ parts

$1.470

10k+ parts

-

445

$2.600

$1.830

$1.470

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Corohmni

South Africa . 613 parts In-Stock

1+ parts

$2.701

100+ parts

-

1k+ parts

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10k+ parts

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613

$2.701

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A-Z Elektronik GmbH

Germany . 10,438 parts In-Stock

1+ parts

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100+ parts

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10,438

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Kepictronics

USA . 10,030 parts In-Stock

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10,030

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Perfect Parts

USA . 6,970 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

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6,970

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Overview

Unleash the power of cutting-edge technology with the MT29F2G08ABAGAWP-IT:G by Micron Technology. This top-of-the-line Flash Memory device offers unparalleled quality and reliability, making it the perfect choice for a wide range of applications. From industrial settings to consumer electronics, this SLC NAND Type memory delivers exceptional performance in any operating environment. Trust Micron Technology to provide you with the value and benefits you need to stay ahead of the competition. Upgrade to the MT29F2G08ABAGAWP-IT:G today and experience the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this flash memory lightweight and durable, making it ideal for portable devices.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent data transfers, increasing the efficiency and speed of the flash memory.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures reliable performance even in extreme conditions, making it suitable for industrial use.

Organization: 256MX8

The organization of 256MX8 allows for efficient data storage and retrieval, enhancing the overall performance of the flash memory.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance, ensuring a stable electrical connection for the flash memory.

Type: SLC NAND TYPE

The use of SLC NAND type technology offers faster read/write speeds and greater reliability, making this flash memory suitable for high-performance applications.

Temperature Grade: INDUSTRIAL

The industrial temperature grade rating ensures that the flash memory can withstand harsh operating conditions, making it ideal for industrial and automotive applications.

Technology: CMOS

The CMOS technology used in this flash memory provides low power consumption, prolonging the battery life of devices in which it is used.

Memory Width: 8

The memory width of 8 bits allows for efficient data transfer and storage, improving the overall performance of the flash memory.

No. of Words Code: 256M

The high number of words code of 256M indicates a large storage capacity, making this flash memory suitable for storing large amounts of data.

Memory IC Type: FLASH

The use of Flash memory IC type ensures fast and reliable data storage and retrieval, making this product a reliable choice for various applications.

Technical Specifications

Flash Memory MT29F2G08ABAGAWP-IT:G attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-609 Code:

e3

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX8

Package Body Material:

PLASTIC/EPOXY

Peak Reflow Temperature (C):

260

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Type:

SLC NAND TYPE

Trade Compliance

MT29F2G08ABAGAWP-IT:G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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