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MT29F128G08AJAAAWP-ITZ:A

Micron Technology

MT29F128G08AJAAAWP-ITZ:A by Micron Technology

Micron Technology's MT29F128G08AJAAAWP-ITZ:A is a 3.3V MLC NAND Flash Memory with 16GX8 organization, operating from -40 to 85 °C. It has a memory density of 137.4Gb and is suitable for industrial applications requiring high-speed parallel data storage.

Median Price

$181.498

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,181 parts In-Stock

1+ parts

$157.250

100+ parts

$136.810

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1,181

$157.250

$136.810

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Farnell

UK . 159 parts In-Stock

1+ parts

$173.627

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159

$173.627

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Arrow

USA . 1,820 parts In-Stock

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$189.370

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1,820

$189.370

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Verical

USA . 1,820 parts In-Stock

1+ parts

$189.370

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1,820

$189.370

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Edge Electronics

USA . 430 parts In-Stock

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430

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 267 parts In-Stock

1+ parts

$136.230

100+ parts

-

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267

$136.230

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$150.851

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-

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100

$150.851

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Chip Stock

USA . 20,600 parts In-Stock

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20,600

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Cyclops Electronics Ltd

UK . 1,200 parts In-Stock

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1,200

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Vyrian

USA . 730 parts In-Stock

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730

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Touchstone Systems

USA . 648 parts In-Stock

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648

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NAC Semi

USA . 311 parts In-Stock

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311

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Micros

Poland . 1 parts In-Stock

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-

100+ parts

$102.125

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1

-

$102.125

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Partservice

France . 1 parts In-Stock

1+ parts

-

100+ parts

$98.981

1k+ parts

$98.981

10k+ parts

$98.981

1

-

$98.981

$98.981

$98.981

Micros sp.j. W. Kędra i J. Lic

Poland . 1 parts In-Stock

1+ parts

-

100+ parts

$106.025

1k+ parts

$106.025

10k+ parts

$106.025

1

-

$106.025

$106.025

$106.025

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 3,268 parts In-Stock

1+ parts

$5.050

100+ parts

-

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3,268

$5.050

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iodParts Technologies Inc.

India . 14 parts In-Stock

1+ parts

$105.400

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14

$105.400

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Continental Prestige Electronics

USA . 222 parts In-Stock

1+ parts

$113.880

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222

$113.880

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Ampacity Inc.

Singapore . 615 parts In-Stock

1+ parts

$121.890

100+ parts

-

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615

$121.890

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Corphita

USA . 279 parts In-Stock

1+ parts

$129.060

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279

$129.060

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Netroflash

USA . 100 parts In-Stock

1+ parts

$150.851

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100

$150.851

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Advanced Electronics

New Zealand . 2,693 parts In-Stock

1+ parts

$174.987

100+ parts

$160.988

1k+ parts

$150.851

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2,693

$174.987

$160.988

$150.851

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Semicontronic

India . 999 parts In-Stock

1+ parts

$265.290

100+ parts

$258.658

1k+ parts

$257.331

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999

$265.290

$258.658

$257.331

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A-Z Elektronik GmbH

Germany . 7,115 parts In-Stock

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7,115

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Argo Parts USA

USA . 4,866 parts In-Stock

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Perfect Parts

USA . 2,244 parts In-Stock

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Corohmni

South Africa . 1,270 parts In-Stock

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1,270

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Authorized Procurement Solutions

USA . 434 parts In-Stock

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434

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GreenTree Electronics

Israel . 409 parts In-Stock

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409

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Kepictronics

USA . 182 parts In-Stock

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Overview

Discover the superior quality and reliability of Micron Technology's MT29F128G08AJAAAWP-ITZ:A Flash Memory. This cutting-edge product offers unparalleled performance in a compact package, making it ideal for a wide range of industrial applications. With a focus on innovation and customer satisfaction, Micron Technology ensures that each memory chip delivers exceptional value and benefits to users. Upgrade your devices with the MT29F128G08AJAAAWP-ITZ:A and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and secure installation on electronic circuit boards.

Operating Mode: ASYNCHRONOUS

Enables independent operation of the flash memory, increasing efficiency and performance.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal voltage level for reliable and stable operation of the flash memory.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for industrial and harsh environments.

Organization: 16GX8

Organized in a 16G x 8 configuration, providing ample storage capacity and data retrieval speed.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed data processing.

Memory IC Type: FLASH

Flash memory offers fast read/write speeds and non-volatile storage, ideal for various electronic applications.

Technical Specifications

Flash Memory MT29F128G08AJAAAWP-ITZ:A attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

137438953472 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

48

No. of Words:

17179869184 words

No. of Words Code:

16G

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Programming Voltage (V):

2.7

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Type:

MLC NAND TYPE

Width:

12 mm

Trade Compliance

MT29F128G08AJAAAWP-ITZ:A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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