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IS25LP016D-JNLE-TR

Integrated Silicon Solution

IS25LP016D-JNLE-TR by Integrated Silicon Solution

IS25LP016D-JNLE-TR by Integrated Silicon Solution is a 16Mb NOR Flash Memory with synchronous operation, 2Mx8 organization, and 133MHz clock frequency. Ideal for industrial applications requiring high-speed data storage in a compact package.

Median Price

$0.771

Lifecycle Status

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8

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Nova Conductors

Japan . 92 parts In-Stock

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Martec Srl

Italy . 14,483 parts In-Stock

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Vyrian

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Component Sense

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ComSIT Distribution GmbH

Germany . 2,131 parts In-Stock

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Cyclops Electronics Ltd

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Argo Parts USA

USA . 3,535 parts In-Stock

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$0.727

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Continental Prestige Electronics

USA . 1,658 parts In-Stock

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$0.727

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$0.712

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Aranea Global

USA . 2,000 parts In-Stock

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$0.755

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$0.725

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Aztec Data Supply Inc.

USA . 1,054 parts In-Stock

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$2.390

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Corohmni

South Africa . 142 parts In-Stock

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Advanced Electronics

New Zealand . 600 parts In-Stock

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$5.035

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$4.783

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Infinite Electronics LLP (Excess)

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Formix International (Excess)

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Authorized Procurement Solutions

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Lixinc

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Futuretech Components

Singapore . 5,000 parts In-Stock

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Overview

Unlock the power of high-quality flash memory with the IS25LP016D-JNLE-TR by Integrated Silicon Solution. This product offers unparalleled reliability and performance, perfect for a wide range of applications. With a focus on value and innovation, Integrated Silicon Solution ensures that customers receive top-tier products that deliver exceptional results. Experience the benefits of cutting-edge technology and seamless operation with this flash memory solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the flash memory, ensuring longevity and reliability in various operating environments.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for high-speed data transfer and efficient performance, making this flash memory ideal for applications requiring quick access to data.

Maximum Operating Temperature: 105 °C

The flash memory can withstand high temperatures, making it suitable for industrial applications or environments with elevated heat levels.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency and reliability of the flash memory.

Memory Width: 8

The memory width of 8 allows for efficient data storage and retrieval, making this flash memory suitable for handling a wide range of data-intensive tasks.

Technical Specifications

Flash Memory IS25LP016D-JNLE-TR attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Maximum Clock Frequency (fCLK):

133 MHz

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Type:

NOR TYPE

Width:

3.9 mm

Trade Compliance

IS25LP016D-JNLE-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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