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MT29F16G08ABACAWP-ITZ:C

Micron Technology

MT29F16G08ABACAWP-ITZ:C by Micron Technology

MT29F16G08ABACAWP-ITZ:C by Micron Technology is a 3.3V SLC NAND Flash Memory with 2GX8 organization, operating from -40 to 85 °C. It has a memory density of 17179869184 bit and is suitable for industrial applications requiring reliable, high-speed data storage in compact devices.

Median Price

$43.529

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 600 parts In-Stock

1+ parts

$32.058

100+ parts

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600

$32.058

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NAC Semi

USA . 6 parts In-Stock

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$55.000

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6

$55.000

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Cyclops Electronics Ltd

UK . 20,560 parts In-Stock

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20,560

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Chip Stock

USA . 14,400 parts In-Stock

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14,400

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Vyrian

USA . 7,342 parts In-Stock

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Bristol Electronics

USA . 558 parts In-Stock

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558

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Atlantic Semiconductor

USA . 558 parts In-Stock

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558

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Digiode

USA . 504 parts In-Stock

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504

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ComSIT Distribution GmbH

Germany . 395 parts In-Stock

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395

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ComSIT USA

USA . 395 parts In-Stock

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395

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Component Sense

UK . 255 parts In-Stock

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255

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Sensible Micro Corp

USA . 122 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 172 parts In-Stock

1+ parts

$2.959

100+ parts

$2.693

1k+ parts

$2.426

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-

172

$2.959

$2.693

$2.426

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Aztec Data Supply Inc.

USA . 332 parts In-Stock

1+ parts

$3.280

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332

$3.280

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Ampacity Inc.

Singapore . 1,506 parts In-Stock

1+ parts

$4.000

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1,506

$4.000

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Corohmni

South Africa . 118 parts In-Stock

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$4.051

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118

$4.051

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AZTECH Wire

Italy . 360 parts In-Stock

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$18.914

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360

$18.914

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Semicontronic

India . 1,859 parts In-Stock

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$25.000

100+ parts

$24.375

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$24.250

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1,859

$25.000

$24.375

$24.250

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Continental Prestige Electronics

USA . 4,162 parts In-Stock

1+ parts

$32.058

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$31.417

4,162

$32.058

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$31.417

Perfect Parts

USA . 12,994 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,019 parts In-Stock

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Argo Parts USA

USA . 4,035 parts In-Stock

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Corphita

USA . 1,864 parts In-Stock

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RC Electronics

USA . 994 parts In-Stock

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994

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Microchip USA

USA . 261 parts In-Stock

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261

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XScomponents

USA . 240 parts In-Stock

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$26.500

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240

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$26.500

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Infinite Electronics LLP (Excess)

. 212 parts In-Stock

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212

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Netroflash

USA . 100 parts In-Stock

1+ parts

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100+ parts

$31.417

1k+ parts

$30.456

10k+ parts

$29.814

100

-

$31.417

$30.456

$29.814

Overview

Unlock the power of reliable and high-performance flash memory with the MT29F16G08ABACAWP-ITZ:C by Micron Technology. As a leading manufacturer in the industry, Micron Technology ensures top-notch quality and innovative technology in their products. This flash memory device is perfect for a wide range of applications and offers customers exceptional value, benefits, and advantages. Experience seamless operation and enhanced performance with this cutting-edge product, making it the ideal choice for all your memory storage needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body ensures durability and protects the internal components from external elements, making it a reliable choice.

Nominal Supply Voltage: 3.3V

Operating at 3.3V supply voltage provides efficient power consumption and performance for the flash memory, making it suitable for a wide range of applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this flash memory is ideal for industrial environments where temperature fluctuations can occur.

Organization: 2GX8

The 2GX8 organization provides a balance between capacity and speed, allowing for efficient data storage and retrieval in various applications.

Minimum Operating Temperature: -40 °C

The flash memory's ability to operate in temperatures as low as -40 °C ensures reliable performance in extreme environmental conditions.

Memory Density: 17179869184 bit

With a high memory density of 17179869184 bit, this flash memory offers ample storage capacity for data-intensive applications.

Technical Specifications

Flash Memory MT29F16G08ABACAWP-ITZ:C attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

17179869184 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

48

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

SLC NAND TYPE

Width:

12 mm

Trade Compliance

MT29F16G08ABACAWP-ITZ:C Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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