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MT29F1G08ABADAWP-IT:D

Micron Technology

MT29F1G08ABADAWP-IT:D by Micron Technology

Micron Technology's MT29F1G08ABADAWP-IT:D is a 3.3V SLC NAND flash memory with 128Mx8 organization, operating in industrial temperature range. It features 2K page size, 128K sector size, and parallel interface. Ideal for applications requiring fast access times and high memory density.

Median Price

$8.892

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Cyclops Electronics Ltd

UK . 9,822 parts In-Stock

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Chip Stock

USA . 7,500 parts In-Stock

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K-1 Technologies

USA . 6,872 parts In-Stock

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Vyrian

USA . 6,215 parts In-Stock

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Digiode

USA . 2,413 parts In-Stock

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Greenchips

USA . 1,011 parts In-Stock

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SIE Connect GmbH - GreenChips

Germany . 1,011 parts In-Stock

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1,011

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Goldney Electronics S.L.

Spain . 410 parts In-Stock

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410

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ComSIT Distribution GmbH

Germany . 140 parts In-Stock

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140

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Prism Electronics

USA . 113 parts In-Stock

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113

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Speed Components Ltd

Israel . 90 parts In-Stock

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90

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Rebound Electronics

UK . 69 parts In-Stock

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69

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Sensible Micro Corp

USA . 21 parts In-Stock

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$8.892

1k+ parts

$8.208

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21

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$8.892

$8.208

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EMSNET

USA . 10 parts In-Stock

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10

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Bristol Electronics

USA . 7 parts In-Stock

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7

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Amalfi Trading

USA . 2 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 402 parts In-Stock

1+ parts

$3.490

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402

$3.490

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Aztec Data Supply Inc.

USA . 2,229 parts In-Stock

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$4.210

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2,229

$4.210

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$4.470

100+ parts

$4.247

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$4.247

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100

$4.470

$4.247

$4.247

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AZTECH Wire

Italy . 385 parts In-Stock

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$12.846

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385

$12.846

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Semicontronic

India . 797 parts In-Stock

1+ parts

$19.000

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$18.525

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$18.430

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797

$19.000

$18.525

$18.430

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Ampacity Inc.

Singapore . 321 parts In-Stock

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$25.000

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321

$25.000

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Kepictronics

USA . 45,000 parts In-Stock

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Continental Prestige Electronics

USA . 5,757 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Sternenhof Electronics (Excess)

Switzerland . 4,100 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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Argo Parts USA

USA . 2,119 parts In-Stock

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Infinite Electronics LLP (Excess)

. 1,352 parts In-Stock

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Corphita

USA . 911 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 541 parts In-Stock

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541

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Microchip USA

USA . 413 parts In-Stock

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413

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Bastille Electronics

Australia . 300 parts In-Stock

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300

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S.R.D Solutions

India . 100 parts In-Stock

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Assy Fe

Spain . 4 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the MT29F1G08ABADAWP-IT:D from Micron Technology. As a leader in the industry, Micron offers top-notch quality and reliability in their Flash Memory products, making them perfect for a wide range of applications. With a compact package style and industrial temperature grade, this SLC NAND type memory device boasts fast access times and low standby current, ensuring optimal performance in any setting. Trust Micron to deliver superior value and unmatched benefits with the MT29F1G08ABADAWP-IT:D.

Feature Benefit Bullets

Package Body Material:

The use of plastic/epoxy material ensures durability and reliability of the product.

Surface Mount:

Being surface mountable makes it easy to integrate into various electronic devices.

Package Shape:

The rectangular package shape allows for efficient use of space on the circuit board.

Operating Mode:

The asynchronous operating mode provides fast and efficient data transfer.

Nominal Supply Voltage / Vsup (V):

The 3.3V supply voltage ensures compatibility with a wide range of systems.

Power Supplies (V):

The 3.3V power supply offers efficient power consumption for energy savings.

No. of Terminals:

With 48 terminals, this product offers versatile connectivity options.

Package Style (Meter):

The small outline and thin profile package style save space in compact devices.

Maximum Operating Temperature:

The high maximum operating temperature ensures reliability in various environments.

Organization:

The 128MX8 memory organization provides sufficient storage capacity.

Minimum Operating Temperature:

The low minimum operating temperature allows for use in extreme cold conditions.

No. of Sectors/Size:

The 1K sectors provide efficient data organization and management.

Terminal Finish:

The tin terminal finish offers good electrical conductivity and corrosion resistance.

Terminal Position:

The dual terminal position allows for flexibility in device integration.

Maximum Seated Height:

The low seated height makes it suitable for slim devices.

Width:

The 12mm width offers compatibility with standard spacing requirements.

Minimum Supply Voltage (Vsup):

The 2.7V minimum supply voltage ensures stable operation.

Page Size (words):

The 2K page size allows for efficient data storage and retrieval.

Maximum Time At Peak Reflow Temperature (s):

The 30-second maximum time at peak reflow temperature ensures proper soldering.

Peak Reflow Temperature °C:

The high peak reflow temperature allows for reliable soldering in manufacturing.

Type:

The SLC NAND type offers fast read and write speeds for performance.

Length:

The 18.4mm length provides a compact form factor for easy integration.

Programming Voltage (V):

The 3.3V programming voltage ensures compatibility with standard systems.

Temperature Grade:

The industrial temperature grade makes it suitable for harsh operating conditions.

Technology:

The CMOS technology offers low power consumption and high reliability.

Parallel or Serial:

The parallel interface allows for fast data transfer rates.

Terminal Form:

The gull wing terminal form provides secure connectivity on the PCB.

Sector Size (Words):

The 128K sector size enables efficient data organization and access.

Maximum Supply Current:

The 35mA maximum supply current ensures efficient power usage.

No. of Words:

With 134,217,728 words, this memory offers ample storage capacity.

Memory Width:

The 8-bit memory width allows for efficient data processing.

Terminal Pitch:

The 0.5mm terminal pitch offers compatibility with standard PCB designs.

No. of Words Code:

The 128M word code provides a large address space for data storage.

Command User Interface:

The command user interface allows for easy control and configuration.

Ready or Busy:

The ready or busy signal provides feedback on the status of the memory.

Maximum Supply Voltage (Vsup):

The 3.6V maximum supply voltage ensures safe operation within specifications.

Memory Density:

The 1,073,741,824-bit memory density offers ample storage capacity.

Memory IC Type:

The flash memory IC type provides non-volatile storage for data retention.

Maximum Standby Current:

The low standby current ensures energy efficiency in idle mode.

Maximum Access Time:

The 25ns maximum access time offers fast data retrieval for better performance.

Technical Specifications

Flash Memory MT29F1G08ABADAWP-IT:D attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

25 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

1K

No. of Terminals:

48

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Page Size (words):

2K

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Programming Voltage (V):

3.3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

128K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

SLC NAND TYPE

Width:

12 mm

Trade Compliance

MT29F1G08ABADAWP-IT:D Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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