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MT25QU512ABB8E12-0AAT

Micron Technology

MT25QU512ABB8E12-0AAT by Micron Technology

MT25QU512ABB8E12-0AAT by Micron Technology is a 64MX8 Flash Memory with 512753664 bit memory density. Operating at 166 MHz, it has a supply voltage of 1.7V to 2V and supports synchronous mode. Ideal for industrial applications, this AEC-Q100 graded memory IC offers high performance in a compact GRID ARRAY package.

Median Price

$11.315

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5,102 parts In-Stock

1+ parts

$7.930

100+ parts

$6.610

1k+ parts

$6.380

10k+ parts

$6.360

5,102

$7.930

$6.610

$6.380

$6.360

Arrow

USA . 608 parts In-Stock

1+ parts

$8.482

100+ parts

-

1k+ parts

-

10k+ parts

-

608

$8.482

-

-

-

Farnell

UK . 332 parts In-Stock

1+ parts

$11.440

100+ parts

$8.800

1k+ parts

-

10k+ parts

-

332

$11.440

$8.800

-

-

Newark

USA . 50 parts In-Stock

1+ parts

$19.490

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$19.490

-

-

-

Element14

Singapore . 242 parts In-Stock

1+ parts

$26.320

100+ parts

-

1k+ parts

-

10k+ parts

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242

$26.320

-

-

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EBV Elektronik

Germany . 2,244 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,244

-

-

-

-

Verical

USA . 972 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$11.190

10k+ parts

-

972

-

-

$11.190

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,176 parts In-Stock

1+ parts

$6.574

100+ parts

-

1k+ parts

-

10k+ parts

-

1,176

$6.574

-

-

-

Nova Conductors

Japan . 650 parts In-Stock

1+ parts

$9.533

100+ parts

-

1k+ parts

-

10k+ parts

-

650

$9.533

-

-

-

Chip Stock

USA . 21,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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21,800

-

-

-

-

NAC Semi

USA . 3,016 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$8.040

3,016

-

-

-

$8.040

Vyrian

USA . 973 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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973

-

-

-

-

Dark Horse Electronics

USA . 244 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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244

-

-

-

-

Component Sense

UK . 132 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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132

-

-

-

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Bristol Electronics

USA . 73 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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73

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 3,302 parts In-Stock

1+ parts

$2.660

100+ parts

-

1k+ parts

-

10k+ parts

-

3,302

$2.660

-

-

-

Corohmni

South Africa . 284 parts In-Stock

1+ parts

$4.474

100+ parts

-

1k+ parts

-

10k+ parts

-

284

$4.474

-

-

-

Ampacity Inc.

Singapore . 809 parts In-Stock

1+ parts

$5.880

100+ parts

-

1k+ parts

-

10k+ parts

-

809

$5.880

-

-

-

Corphita

USA . 934 parts In-Stock

1+ parts

$6.228

100+ parts

-

1k+ parts

-

10k+ parts

-

934

$6.228

-

-

-

Netroflash

USA . 500 parts In-Stock

1+ parts

$9.533

100+ parts

-

1k+ parts

$9.056

10k+ parts

$8.866

500

$9.533

-

$9.056

$8.866

Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$9.724

100+ parts

$9.724

1k+ parts

$9.724

10k+ parts

-

20

$9.724

$9.724

$9.724

-

Continental Prestige Electronics

USA . 402 parts In-Stock

1+ parts

$10.750

100+ parts

$7.700

1k+ parts

-

10k+ parts

-

402

$10.750

$7.700

-

-

Semicontronic

India . 693 parts In-Stock

1+ parts

$12.800

100+ parts

$12.480

1k+ parts

$12.416

10k+ parts

-

693

$12.800

$12.480

$12.416

-

S.R.D Solutions

India . 12,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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12,000

-

-

-

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GreenTree Electronics

Israel . 5,000 parts In-Stock

1+ parts

-

100+ parts

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5,000

-

-

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Argo Parts USA

USA . 4,019 parts In-Stock

1+ parts

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4,019

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-

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Kepictronics

USA . 3,822 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,822

-

-

-

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Speed Components Ltd (Excess)

Israel . 1,402 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,402

-

-

-

-

A-Z Elektronik GmbH

Germany . 1,055 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,055

-

-

-

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Robosynatics

Brazil . 300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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300

-

-

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Lucentia Tech

USA . 300 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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300

-

-

-

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Futuretech Components

Singapore . 150 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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150

-

-

-

-

Overview

Unlock the power of reliable flash memory with the MT25QU512ABB8E12-0AAT from Micron Technology. As a trusted manufacturer in the industry, Micron delivers top-quality products that are perfect for a wide range of applications. Whether you're looking to enhance the performance of your automotive systems, consumer electronics, or industrial equipment, this flash memory offers unparalleled value, benefits, and advantages. Trust Micron to provide cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the flash memory, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and efficient integration onto circuit boards, saving space and simplifying the manufacturing process.

Operating Mode: SYNCHRONOUS

Enables faster data transfer rates and synchronous communication, improving overall performance.

Nominal Supply Voltage (Vsup): 1.8V

Operates at an energy-efficient voltage level, reducing power consumption and heat generation.

Maximum Clock Frequency (fCLK): 166MHz

Supports high-speed data processing, offering faster read and write speeds for enhanced performance.

Memory Density: 512753664 bit

Provides a large storage capacity for storing data, programs, and files, making it suitable for various applications.

Technical Specifications

Flash Memory MT25QU512ABB8E12-0AAT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Alternate Memory Width:

1

Maximum Clock Frequency (fCLK):

166 MHz

JESD-30 Code:

R-PBGA-B24

Length:

8 mm

Memory Density:

512753664 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

64094208 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

1.8

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6 mm

Trade Compliance

MT25QU512ABB8E12-0AAT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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