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MT29F16G08ABACAWP-ITZ:CTR

Micron Technology

MT29F16G08ABACAWP-ITZ:CTR by Micron Technology

Micron Technology's MT29F16G08ABACAWP-ITZ:CTR is a 3.3V SLC NAND Flash Memory with 2GX8 organization, operating from -40 to 85 °C. It features a small outline package, parallel interface, and industrial temperature grade suitable for embedded systems and data storage applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 21,730 parts In-Stock

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21,730

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Vyrian

USA . 7,703 parts In-Stock

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7,703

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Digiode

USA . 988 parts In-Stock

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988

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Nova Conductors

Japan . 19 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 577 parts In-Stock

1+ parts

$5.000

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577

$5.000

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Aztec Data Supply Inc.

USA . 3,467 parts In-Stock

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$5.540

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3,467

$5.540

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Semicontronic

India . 183 parts In-Stock

1+ parts

$7.000

100+ parts

$6.825

1k+ parts

$6.790

10k+ parts

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183

$7.000

$6.825

$6.790

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AZTECH Wire

Italy . 618 parts In-Stock

1+ parts

$8.538

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618

$8.538

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Argo Parts USA

USA . 3,729 parts In-Stock

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3,729

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Corphita

USA . 2,403 parts In-Stock

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2,403

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Perfect Parts

USA . 2,240 parts In-Stock

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2,240

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Continental Prestige Electronics

USA . 1,939 parts In-Stock

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1,939

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Microchip USA

USA . 447 parts In-Stock

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447

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Bastille Electronics

Australia . 50 parts In-Stock

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50

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Corohmni

South Africa . 31 parts In-Stock

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Overview

Unleash the power of reliable, high-quality flash memory with the MT29F16G08ABACAWP-ITZ:CTR by Micron Technology. As a leading manufacturer in the industry, Micron Technology delivers top-notch products that meet the demands of cutting-edge technology. This flash memory device is perfect for a wide range of applications, offering customers exceptional value, benefits, and advantages. Trust in Micron Technology to provide you with the best in flash memory technology. Choose quality, choose Micron.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material is lightweight and durable, making it ideal for portable devices and ensuring longevity.

Surface Mount: YES

Allows for easy integration into circuit boards without the need for additional connectors, saving space and simplifying assembly.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a standard voltage level, ensuring compatibility with most systems and reducing the risk of voltage issues.

No. of Terminals: 48

Provides ample connectivity options for integrating the flash memory into various circuits and systems.

Maximum Operating Temperature: 85 °C

Can withstand high operating temperatures, making it suitable for industrial applications and environments.

Memory Density: 17179869184 bit

High memory density allows for storing a large amount of data in a compact package, making it efficient for data-intensive applications.

Technical Specifications

Flash Memory MT29F16G08ABACAWP-ITZ:CTR attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

17179869184 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

48

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Programming Voltage (V):

2.7

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Type:

SLC NAND TYPE

Width:

12 mm

Trade Compliance

MT29F16G08ABACAWP-ITZ:CTR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.1.A

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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