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MT28EW256ABA1HPC-0SIT

Micron Technology

MT28EW256ABA1HPC-0SIT by Micron Technology

Micron Technology's MT28EW256ABA1HPC-0SIT is a 16Mx16 NOR flash memory with 268MB density. Operating at 3V, it offers fast access time of 70ns for industrial applications. With a low profile grid array package, it supports asynchronous mode and parallel interface for high-speed data storage solutions.

Median Price

$16.983

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,702 parts In-Stock

1+ parts

$7.210

100+ parts

$5.680

1k+ parts

-

10k+ parts

$5.670

3,702

$7.210

$5.680

-

$5.670

Verical

USA . 2,548 parts In-Stock

1+ parts

$9.116

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-

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2,548

$9.116

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Newark

USA . 1,081 parts In-Stock

1+ parts

$24.850

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1,081

$24.850

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Element14

Singapore . 42 parts In-Stock

1+ parts

$29.070

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42

$29.070

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Avnet

USA . 2,208 parts In-Stock

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2,208

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Distributors (In-Stock)

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Digiode

USA . 1,589 parts In-Stock

1+ parts

$5.133

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-

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1,589

$5.133

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$6.706

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10

$6.706

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Vyrian

USA . 5,623 parts In-Stock

1+ parts

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5,623

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Chip Stock

USA . 4,764 parts In-Stock

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4,764

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Cyclops Electronics Ltd

UK . 1,848 parts In-Stock

1+ parts

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1,848

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North Shore Components

USA . 1,729 parts In-Stock

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1,729

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NAC Semi

USA . 813 parts In-Stock

1+ parts

-

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$9.510

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813

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$9.510

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Component Sense

UK . 68 parts In-Stock

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68

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Bristol Electronics

USA . 3 parts In-Stock

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3

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 115 parts In-Stock

1+ parts

$2.510

100+ parts

-

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115

$2.510

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Corohmni

South Africa . 886 parts In-Stock

1+ parts

$3.865

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886

$3.865

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Corphita

USA . 2,089 parts In-Stock

1+ parts

$4.863

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2,089

$4.863

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$5.056

100+ parts

$4.803

1k+ parts

$4.803

10k+ parts

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500

$5.056

$4.803

$4.803

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Ampacity Inc.

Singapore . 3,373 parts In-Stock

1+ parts

$6.040

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3,373

$6.040

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Semicontronic

India . 2,014 parts In-Stock

1+ parts

$6.090

100+ parts

$5.938

1k+ parts

$5.907

10k+ parts

-

2,014

$6.090

$5.938

$5.907

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Continental Prestige Electronics

USA . 3,160 parts In-Stock

1+ parts

$6.706

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10k+ parts

$6.572

3,160

$6.706

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$6.572

Netroflash

USA . 50 parts In-Stock

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$6.706

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50

$6.706

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S.R.D Solutions

India . 27,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 9,448 parts In-Stock

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Legend Electronics Inc. (Excess)

USA . 5,000 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 5,000 parts In-Stock

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RC Electronics

USA . 3,881 parts In-Stock

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3,881

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Robosynatics

Brazil . 350 parts In-Stock

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350

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Lucentia Tech

USA . 350 parts In-Stock

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350

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Argo Parts USA

USA . 140 parts In-Stock

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140

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Cyclops Electronics Ltd (Excess)

UK . 105 parts In-Stock

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105

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iodParts Technologies Inc.

India . 45 parts In-Stock

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45

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Overview

Unleash the power of Micron Technology with the MT28EW256ABA1HPC-0SIT Flash Memory. Designed for industrial-grade applications, this cutting-edge memory solution offers unmatched reliability and performance. With a wide operating temperature range and high memory density, this NOR type memory delivers lightning-fast access times and seamless integration. Say goodbye to data bottlenecks and hello to optimized efficiency with Micron Technology's top-of-the-line flash memory technology. Elevate your projects to new heights with the MT28EW256ABA1HPC-0SIT.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides durability and protection to the memory IC, making it suitable for harsh environments.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent access to memory locations, improving efficiency and speed of data retrieval.

Nominal Supply Voltage: 3V

The 3V supply voltage ensures compatibility with a wide range of systems, making it versatile for different applications.

Technology: CMOS

CMOS technology offers low power consumption and high reliability, extending the lifespan of the memory IC.

Memory Density: 268435456 bit

With a high memory density of 268435456 bits, this flash memory IC can store a large amount of data, making it ideal for data-intensive applications.

Technical Specifications

Flash Memory MT28EW256ABA1HPC-0SIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

70 ns

Alternate Memory Width:

8

JESD-30 Code:

R-PBGA-B64

Length:

13 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

64

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

3

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

NOR TYPE

Width:

11 mm

Trade Compliance

MT28EW256ABA1HPC-0SIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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