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MT28GU01GAAA1EGC-0SIT

Micron Technology

MT28GU01GAAA1EGC-0SIT by Micron Technology

MT28GU01GAAA1EGC-0SIT by Micron Technology is a 64MX16 Flash Memory with 1073741824 bit memory density. Operating at 1.8V, it offers a max access time of 96ns in industrial temperature grade applications. Featuring synchronous operation and parallel interface, this thin profile GRID ARRAY package is suitable for various high-performance embedded systems.

Median Price

$26.524

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

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$15.549

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10

$15.549

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Component Sense

UK . 4 parts In-Stock

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$37.500

100+ parts

$37.500

1k+ parts

$37.500

10k+ parts

$35.000

4

$37.500

$37.500

$37.500

$35.000

Chip Stock

USA . 6,000 parts In-Stock

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Vyrian

USA . 4,364 parts In-Stock

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Digiode

USA . 2,193 parts In-Stock

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Sensible Micro Corp

USA . 618 parts In-Stock

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Cyclops Electronics Ltd

UK . 110 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 171 parts In-Stock

1+ parts

$1.000

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171

$1.000

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Aztec Data Supply Inc.

USA . 3,536 parts In-Stock

1+ parts

$3.810

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3,536

$3.810

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Corohmni

South Africa . 404 parts In-Stock

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$5.167

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404

$5.167

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Continental Prestige Electronics

USA . 2,144 parts In-Stock

1+ parts

$15.549

100+ parts

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$15.238

2,144

$15.549

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$15.238

AZTECH Wire

Italy . 304 parts In-Stock

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$17.586

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A-Z Elektronik GmbH

Germany . 10,515 parts In-Stock

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Kepictronics

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$15.238

1k+ parts

$14.772

10k+ parts

$14.461

2,000

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$15.238

$14.772

$14.461

RC Electronics

USA . 1,797 parts In-Stock

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Corphita

USA . 1,636 parts In-Stock

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Argo Parts USA

USA . 946 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 642 parts In-Stock

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642

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Perfect Parts

USA . 560 parts In-Stock

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Microchip USA

USA . 406 parts In-Stock

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Overview

Experience the cutting-edge technology of Micron Technology with the MT28GU01GAAA1EGC-0SIT Flash Memory. This high-quality product offers unparalleled reliability and performance for a wide range of applications. With its advanced features and industrial-grade components, this memory device ensures seamless operation even in extreme conditions. Trust Micron Technology to deliver exceptional value and benefits to meet all your memory needs. Choose the MT28GU01GAAA1EGC-0SIT for superior quality and reliability that sets you apart from the competition.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this flash memory durable and lightweight, ideal for various applications.

Surface Mount: YES

With surface mount capability, this flash memory can be easily integrated on PCBs, saving space and simplifying the manufacturing process.

Screening Level: AEC-Q100

AEC-Q100 screening ensures high reliability and quality standards, making this flash memory suitable for automotive and industrial environments.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact form factor, enabling efficient use of space in electronic designs.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfers and coordination with other system components, enhancing overall performance.

Nominal Supply Voltage (Vsup): 1.8V

The 1.8V supply voltage offers energy efficiency and compatibility with low-power devices, extending battery life.

No. of Terminals: 64

With 64 terminals, this flash memory provides ample connectivity options for securely interfacing with other components.

Package Style: GRID ARRAY, THIN PROFILE

The grid array package style with a thin profile enables easy installation and space-saving benefits in compact devices.

Maximum Operating Temperature: 85°C

The high maximum operating temperature tolerance of 85°C ensures reliability and performance in extreme thermal conditions.

Organization: 64MX16

The 64MX16 organization allows for high-density memory storage and efficient data retrieval in large-scale applications.

Minimum Operating Temperature: -40°C

The low minimum operating temperature of -40°C ensures reliable operation in cold environments, expanding the range of applications.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin silver copper provides excellent conductivity, corrosion resistance, and reliability in various operating conditions.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and facilitates efficient heat dissipation, enhancing overall system performance.

Maximum Seated Height: 1.2mm

The maximum seated height of 1.2mm allows for a slim profile and compact design in space-constrained electronic devices.

Width: 8mm

The 8mm width offers a balance between compactness and ease of handling during installation and maintenance.

Minimum Supply Voltage (Vsup): 1.7V

The minimum supply voltage of 1.7V ensures compatibility with a wide range of power sources and devices, increasing flexibility.

Length: 10mm

The 10mm length provides a compact footprint, suitable for space-efficient integration in various electronic systems.

Programming Voltage (V): 1.8V

The 1.8V programming voltage facilitates easy reprogramming and updating of data, ensuring versatility and adaptability.

Temperature Grade: INDUSTRIAL

The industrial temperature grade designation ensures reliable performance and durability in harsh operating environments.

Technology: CMOS

The CMOS technology used in this flash memory offers low power consumption, high speed, and compatibility with a wide range of systems.

Parallel or Serial: PARALLEL

With parallel operation, this flash memory offers fast data transfer rates and efficient processing, suitable for high-performance applications.

Terminal Form: BALL

The ball terminal form provides secure connections, easy installation, and reliable performance in various applications.

No. of Words: 67108864 words

The 67,108,864 words capacity allows for ample storage space and efficient data management in complex systems.

Memory Width: 16

The 16-bit memory width enables fast data access and processing, enhancing system performance and responsiveness.

Terminal Pitch: 1mm

The 1mm terminal pitch offers easy soldering and secure connections, ensuring reliability and stability in operation.

No. of Words Code: 64M

The 64 million words code capacity enables extensive data storage and efficient data handling capabilities for diverse applications.

Maximum Supply Voltage (Vsup): 2V

The maximum supply voltage of 2V provides flexibility and compatibility with a wide range of power sources, expanding application possibilities.

Memory Density: 1073741824 bit

With a high memory density of 1,073,741,824 bits, this flash memory offers ample storage capacity for large-scale data storage and processing.

Memory IC Type: FLASH

The flash memory IC type provides non-volatile storage, fast read/write speeds, and reliable data retention, making it ideal for diverse applications.

Maximum Access Time: 96ns

The fast maximum access time of 96ns allows for quick data retrieval and processing, enhancing overall system performance and responsiveness.

Technical Specifications

Flash Memory MT28GU01GAAA1EGC-0SIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

96 ns

JESD-30 Code:

R-PBGA-B64

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

64

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Programming Voltage (V):

1.8

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

MT28GU01GAAA1EGC-0SIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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