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MT28EW01GABA1HPC-0SIT

Micron Technology

MT28EW01GABA1HPC-0SIT by Micron Technology

MT28EW01GABA1HPC-0SIT by Micron Technology is a 64MX16 Flash Memory with 67108864 words and 1073741824 bit memory density. Operating at -40 to 85 °C, it has a peak reflow temp of 260C. Ideal for industrial applications, this CMOS technology memory features parallel access with a max supply voltage of 3.6V.

Median Price

$17.760

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,013 parts In-Stock

1+ parts

$16.830

100+ parts

$12.950

1k+ parts

-

10k+ parts

-

1,013

$16.830

$12.950

-

-

Arrow

USA . 3,270 parts In-Stock

1+ parts

$17.060

100+ parts

$13.690

1k+ parts

$12.610

10k+ parts

-

3,270

$17.060

$13.690

$12.610

-

Verical

USA . 484 parts In-Stock

1+ parts

$17.760

100+ parts

$13.890

1k+ parts

$12.910

10k+ parts

-

484

$17.760

$13.890

$12.910

-

Mouser Electronics

USA . 1,867 parts In-Stock

1+ parts

$25.390

100+ parts

$21.410

1k+ parts

$20.870

10k+ parts

-

1,867

$25.390

$21.410

$20.870

-

Element14

Singapore . 895 parts In-Stock

1+ parts

$26.330

100+ parts

$22.650

1k+ parts

-

10k+ parts

-

895

$26.330

$22.650

-

-

Newark

USA . 829 parts In-Stock

1+ parts

$47.140

100+ parts

-

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-

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829

$47.140

-

-

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EBV Elektronik

Germany . 2,208 parts In-Stock

1+ parts

-

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2,208

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Avnet

USA . 1,104 parts In-Stock

1+ parts

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1,104

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-

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Future Electronics

Canada . 1,104 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$10.640

10k+ parts

-

1,104

-

-

$10.640

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WPG Americas

USA . 954 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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954

-

-

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 439 parts In-Stock

1+ parts

$14.763

100+ parts

-

1k+ parts

-

10k+ parts

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439

$14.763

-

-

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Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$15.430

100+ parts

-

1k+ parts

-

10k+ parts

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450

$15.430

-

-

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Chip Stock

USA . 13,300 parts In-Stock

1+ parts

-

100+ parts

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13,300

-

-

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NAC Semi

USA . 5,520 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$13.050

5,520

-

-

-

$13.050

Cyclops Electronics Ltd

UK . 4,083 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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4,083

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-

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Dynamic Solutions

Germany . 4,000 parts In-Stock

1+ parts

-

100+ parts

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4,000

-

-

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Bristol Electronics

USA . 3,500 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,500

-

-

-

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Vyrian

USA . 1,444 parts In-Stock

1+ parts

-

100+ parts

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1,444

-

-

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Component Sense

UK . 1,204 parts In-Stock

1+ parts

-

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1,204

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-

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Netsource Technology, Inc.

USA . 213 parts In-Stock

1+ parts

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213

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Kruse Electronics AG

Switzerland . 50 parts In-Stock

1+ parts

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50

-

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Kruse

Germany . 50 parts In-Stock

1+ parts

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100+ parts

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50

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 161 parts In-Stock

1+ parts

$4.162

100+ parts

-

1k+ parts

-

10k+ parts

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161

$4.162

-

-

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Aztec Data Supply Inc.

USA . 8,473 parts In-Stock

1+ parts

$5.152

100+ parts

-

1k+ parts

-

10k+ parts

-

8,473

$5.152

-

-

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Semicontronic

India . 1,736 parts In-Stock

1+ parts

$13.210

100+ parts

$12.880

1k+ parts

$12.814

10k+ parts

-

1,736

$13.210

$12.880

$12.814

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Ampacity Inc.

Singapore . 1,544 parts In-Stock

1+ parts

$13.210

100+ parts

-

1k+ parts

-

10k+ parts

-

1,544

$13.210

-

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Corphita

USA . 2,112 parts In-Stock

1+ parts

$13.986

100+ parts

-

1k+ parts

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10k+ parts

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2,112

$13.986

-

-

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Continental Prestige Electronics

USA . 1,036 parts In-Stock

1+ parts

$15.270

100+ parts

$11.990

1k+ parts

-

10k+ parts

-

1,036

$15.270

$11.990

-

-

Netroflash

USA . 100 parts In-Stock

1+ parts

$15.430

100+ parts

-

1k+ parts

$14.659

10k+ parts

$14.350

100

$15.430

-

$14.659

$14.350

Perfect Parts

USA . 9,358 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

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9,358

-

-

-

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A-Z Elektronik GmbH

Germany . 8,424 parts In-Stock

1+ parts

-

100+ parts

-

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8,424

-

-

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Kepictronics

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

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6,000

-

-

-

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GreenTree Electronics

Israel . 3,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,500

-

-

-

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Argo Parts USA

USA . 2,923 parts In-Stock

1+ parts

-

100+ parts

-

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2,923

-

-

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Microchip USA

USA . 1,932 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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1,932

-

-

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iBuyXS LLC

. 1,250 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$10.560

10k+ parts

-

1,250

-

-

$10.560

-

Futuretech Components

Singapore . 800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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800

-

-

-

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Legend Electronics Inc. (Excess)

USA . 700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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700

-

-

-

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Speed Components Ltd (Excess)

Israel . 700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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700

-

-

-

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Formix International (Excess)

India . 8 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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8

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-

Overview

Unlock the power of cutting-edge technology with the MT28EW01GABA1HPC-0SIT by Micron Technology. As a leading manufacturer in the industry, Micron delivers top-quality Flash Memory products that are perfect for a wide range of applications. This innovative memory solution offers unmatched value, benefits, and advantages to customers looking for reliable performance and durability. Experience seamless operation and enhanced efficiency with Micron's MT28EW01GABA1HPC-0SIT, a game-changer in the world of memory technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this Flash Memory lightweight and durable.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation of this Flash Memory on circuit boards.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a compact design, optimizing space on the circuit board.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode ensures quick and efficient data transfer in various applications.

Nominal Supply Voltage / Vsup: 3V

A nominal supply voltage of 3V ensures compatibility with a wide range of electronic devices.

No. of Terminals: 64

With 64 terminals, this Flash Memory offers a high level of connectivity and flexibility in use.

Package Style (Meter): GRID ARRAY, LOW PROFILE

The grid array, low profile package style provides a sturdy and space-saving solution for memory storage.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this Flash Memory can withstand high heat environments.

Organization: 64MX16

The organization of 64MX16 offers a large memory capacity and high data processing capability.

Minimum Operating Temperature: -40 °C

The Flash Memory's ability to function in temperatures as low as -40°C makes it suitable for use in various conditions.

Terminal Finish: TIN SILVER COPPER

The use of tin silver copper terminal finish enhances the conductivity and reliability of this Flash Memory.

Terminal Position: BOTTOM

The bottom terminal position simplifies the installation and connection process of the Flash Memory.

Maximum Seated Height: 1.4 mm

The low maximum seated height ensures compatibility with slim and compact electronic devices.

Width: 11 mm

The 11mm width of this Flash Memory allows for easy integration into different electronic systems.

Minimum Supply Voltage (Vsup): 2.7V

With a minimum supply voltage of 2.7V, this Flash Memory is energy-efficient and can operate on various power sources.

Maximum Time At Peak Reflow Temperature (s): 30

The Flash Memory can withstand peak reflow temperatures for up to 30 seconds, ensuring durability during the soldering process.

Peak Reflow Temperature °C: 260

The Flash Memory can withstand high peak reflow temperatures of 260°C, making it suitable for reliable soldering.

Length: 13 mm

The 13mm length of the Flash Memory ensures a compact and space-efficient design.

Programming Voltage (V): 3

The programming voltage of 3V supports fast and efficient data programming on this Flash Memory.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures the Flash Memory's reliability and durability in harsh operating conditions.

Technology: CMOS

The CMOS technology of this Flash Memory offers low power consumption and high speed data processing.

Parallel or Serial: PARALLEL

The parallel operation mode allows for simultaneous data transfer, increasing efficiency in data processing.

Terminal Form: BALL

The ball terminal form enhances the connectivity and reliability of this Flash Memory.

No. of Words: 67108864 words

With a high number of words, this Flash Memory offers ample storage capacity for various data.

Memory Width: 16

The 16-bit memory width of this Flash Memory supports efficient data transfer and processing.

Terminal Pitch: 1 mm

The 1mm terminal pitch allows for precise and secure connectivity on the Flash Memory.

No. of Words Code: 64M

The coding of 64M ensures the accurate organization and management of data within this Flash Memory.

Maximum Supply Voltage (Vsup): 3.6V

A maximum supply voltage of 3.6V provides a safe operating range for this Flash Memory.

Memory Density: 1073741824 bit

The high memory density of 1073741824 bits allows for extensive data storage capacity in this Flash Memory.

Memory IC Type: FLASH

Being a Flash Memory IC type, this product offers fast read and write speeds for efficient data processing.

Maximum Access Time: 95 ns

With a maximum access time of 95ns, this Flash Memory provides quick data retrieval and processing.

Technical Specifications

Flash Memory MT28EW01GABA1HPC-0SIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

95 ns

JESD-30 Code:

R-PBGA-B64

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

64

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

11 mm

Trade Compliance

MT28EW01GABA1HPC-0SIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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