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MT25QL01GBBB8ESF-0SITTR

Micron Technology

MT25QL01GBBB8ESF-0SITTR by Micron Technology

Micron Technology's MT25QL01GBBB8ESF-0SITTR is a NOR type Flash Memory with 128Mx8 organization, operating at 133MHz clock frequency. It offers 100000 Write/Erase cycles endurance and SPI serial bus interface. Ideal for applications requiring fast synchronous operation and high data retention in a compact package.

Median Price

$11.714

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,136 parts In-Stock

1+ parts

$11.180

100+ parts

$9.580

1k+ parts

$8.940

10k+ parts

-

1,136

$11.180

$9.580

$8.940

-

DigiKey

USA . 919 parts In-Stock

1+ parts

$26.520

100+ parts

$22.629

1k+ parts

$20.777

10k+ parts

-

919

$26.520

$22.629

$20.777

-

Verical

USA . 18,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$12.249

10k+ parts

-

18,000

-

-

$12.249

-

Future Electronics

Canada . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$6.430

10k+ parts

-

5,000

-

-

$6.430

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 629 parts In-Stock

1+ parts

$13.480

100+ parts

-

1k+ parts

-

10k+ parts

-

629

$13.480

-

-

-

Nova Conductors

Japan . 1,000 parts In-Stock

1+ parts

$14.320

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

$14.320

-

-

-

Chip Stock

USA . 4,860 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,860

-

-

-

-

Vyrian

USA . 659 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

659

-

-

-

-

Sensible Micro Corp

USA . 81 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

81

-

-

-

-

EPE Components Inc.

USA . 8 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8

-

-

-

-

Bristol Electronics

USA . 8 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,181 parts In-Stock

1+ parts

$4.280

100+ parts

-

1k+ parts

-

10k+ parts

-

4,181

$4.280

-

-

-

Corohmni

South Africa . 508 parts In-Stock

1+ parts

$4.751

100+ parts

-

1k+ parts

-

10k+ parts

-

508

$4.751

-

-

-

Advanced Electronics

New Zealand . 2,100 parts In-Stock

1+ parts

$4.804

100+ parts

$4.564

1k+ parts

$4.564

10k+ parts

-

2,100

$4.804

$4.564

$4.564

-

Semicontronic

India . 1,357 parts In-Stock

1+ parts

$9.430

100+ parts

$9.194

1k+ parts

$9.147

10k+ parts

-

1,357

$9.430

$9.194

$9.147

-

Ampacity Inc.

Singapore . 535 parts In-Stock

1+ parts

$9.430

100+ parts

-

1k+ parts

-

10k+ parts

-

535

$9.430

-

-

-

Corphita

USA . 1,132 parts In-Stock

1+ parts

$12.771

100+ parts

-

1k+ parts

-

10k+ parts

-

1,132

$12.771

-

-

-

Continental Prestige Electronics

USA . 6,369 parts In-Stock

1+ parts

$14.320

100+ parts

-

1k+ parts

-

10k+ parts

$14.034

6,369

$14.320

-

-

$14.034

Glotronic Ltd.

UK . 800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

800

-

-

-

-

Argo Parts USA

USA . 726 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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726

-

-

-

-

iodParts Technologies Inc.

India . 191 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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191

-

-

-

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Netroflash

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$14.034

1k+ parts

$13.604

10k+ parts

$13.318

50

-

$14.034

$13.604

$13.318

Overview

Unlock the power of reliable and high-performance flash memory with Micron Technology's MT25QL01GBBB8ESF-0SITTR. Designed with top-quality materials and cutting-edge technology, this small outline package offers seamless integration and synchronous operation for a wide range of applications. With 128MX8 organization and 133 MHz clock frequency, this NOR type memory device provides 100,000 write/erase cycles and a minimum data retention time of 20 years. Whether you're in need of fast data transfer speeds or secure storage solutions, this Micron flash memory delivers unmatched value and performance to meet your needs. Elevate your projects with the MT25QL01GBBB8ESF-0SITTR and experience the difference of premium quality technology from a trusted industry leader.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the flash memory, ensuring it can withstand various environmental conditions.

Surface Mount: YES

Allows for easy installation on PCBs, saving time and effort during assembly.

Operating Mode: SYNCHRONOUS

Enables fast and efficient data transfer, important for high-performance applications.

Nominal Supply Voltage / Vsup (V): 3

Standard voltage requirement that is commonly supported by most devices, making it compatible with a wide range of systems.

No. of Terminals: 16

Sufficient number of terminals for connecting the flash memory to other components, ensuring reliable data communication.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows the flash memory to function effectively in various environments.

Organization: 128MX8

High organization configuration provides large memory capacity and efficient data storage.

Output Characteristics: 3-STATE

Three-state output allows multiple devices to share the same communication lines, enhancing flexibility in the system design.

Maximum Standby Current: 0.00006 Amp

Low standby current helps conserve power when the flash memory is not in active use, extending battery life in portable devices.

Technical Specifications

Flash Memory MT25QL01GBBB8ESF-0SITTR attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Boot Block:

BOTTOM/TOP

Maximum Clock Frequency (fCLK):

133 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G16

Length:

10.3 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

16

No. of Words:

1073741824 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Maximum Seated Height:

2.65 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00006 Amp

Maximum Supply Current:

55 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

7.5 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

MT25QL01GBBB8ESF-0SITTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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