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N25Q064A11ESE40G

Micron Technology

N25Q064A11ESE40G by Micron Technology

Micron Technology's N25Q064A11ESE40G is a 64Mbit flash memory with synchronous operation, 108MHz clock frequency, and 1.8V programming voltage. Ideal for industrial applications requiring high-speed data storage in small outline packages.

Median Price

$0.885

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 14,400 parts In-Stock

1+ parts

$1.380

100+ parts

$0.890

1k+ parts

$0.480

10k+ parts

$0.390

14,400

$1.380

$0.890

$0.480

$0.390

Verical

USA . 14,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.390

14,400

-

-

-

$0.390

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$1.630

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$1.630

-

-

-

Digiode

USA . 2,312 parts In-Stock

1+ parts

$3.496

100+ parts

-

1k+ parts

-

10k+ parts

-

2,312

$3.496

-

-

-

Chip Stock

USA . 21,300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

21,300

-

-

-

-

Flip Electronics

USA . 4,660 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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-

4,660

-

-

-

-

Vyrian

USA . 2,338 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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-

2,338

-

-

-

-

A2Z Electronics, Inc.

USA . 19 parts In-Stock

1+ parts

-

100+ parts

-

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19

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Bristol Electronics

USA . 19 parts In-Stock

1+ parts

-

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19

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Cyclops Electronics Ltd

UK . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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10

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 14,051 parts In-Stock

1+ parts

$0.332

100+ parts

$0.324

1k+ parts

$0.322

10k+ parts

-

14,051

$0.332

$0.324

$0.322

-

Continental Prestige Electronics

USA . 2,931 parts In-Stock

1+ parts

$1.630

100+ parts

-

1k+ parts

-

10k+ parts

$1.597

2,931

$1.630

-

-

$1.597

Argo Parts USA

USA . 718 parts In-Stock

1+ parts

$1.630

100+ parts

-

1k+ parts

-

10k+ parts

-

718

$1.630

-

-

-

Netroflash

USA . 100 parts In-Stock

1+ parts

$1.630

100+ parts

-

1k+ parts

$1.548

10k+ parts

$1.516

100

$1.630

-

$1.548

$1.516

Corohmni

South Africa . 159 parts In-Stock

1+ parts

$2.985

100+ parts

-

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-

10k+ parts

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159

$2.985

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Corphita

USA . 1,261 parts In-Stock

1+ parts

$3.312

100+ parts

-

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-

10k+ parts

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1,261

$3.312

-

-

-

Aztec Data Supply Inc.

USA . 293 parts In-Stock

1+ parts

$5.230

100+ parts

-

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-

10k+ parts

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293

$5.230

-

-

-

Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$5.904

100+ parts

$5.609

1k+ parts

$5.609

10k+ parts

-

5,000

$5.904

$5.609

$5.609

-

AZTECH Wire

Italy . 165 parts In-Stock

1+ parts

$16.240

100+ parts

-

1k+ parts

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10k+ parts

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165

$16.240

-

-

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Microchip USA

USA . 477 parts In-Stock

1+ parts

-

100+ parts

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477

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Overview

Experience the cutting-edge technology of Micron Technology with the N25Q064A11ESE40G Flash Memory. This high-quality product offers unparalleled reliability and performance for a wide range of applications. With its compact package style and industrial temperature grade, this flash memory is perfect for demanding environments. Trust in Micron's expertise and innovation to bring you a superior memory solution that delivers value, benefits, and advantages beyond compare. Elevate your projects with the N25Q064A11ESE40G today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the flash memory, ensuring a longer lifespan.

Nominal Supply Voltage / Vsup (V): 1.8

Efficient power usage at a standard voltage level for optimal performance.

Maximum Operating Temperature: 85 °C

Capable of operating in a wide range of temperatures, suitable for industrial environments.

Memory Density: 67108864 bit

Offers a high storage capacity for data-intensive applications and large files.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed data transfer.

Terminal Form: GULL WING

Gull wing terminals allow for easy installation and secure connection onto circuit boards.

Memory IC Type: FLASH

Flash memory technology provides fast read and write speeds, ideal for applications requiring quick data access.

Technical Specifications

Flash Memory N25Q064A11ESE40G attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

108 MHz

JESD-30 Code:

S-PDSO-G8

Length:

5.285 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

1.8

Maximum Seated Height:

2.16 mm

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

5.285 mm

Trade Compliance

N25Q064A11ESE40G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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