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N25Q128A13ESE40F

Micron Technology

N25Q128A13ESE40F by Micron Technology

N25Q128A13ESE40F by Micron Technology is a NOR type flash memory with 16MX8 organization and a memory density of 134217728 bits. It operates at a max clock frequency of 108 MHz and has an endurance of 100000 write/erase cycles. This flash memory is commonly used in industrial applications requiring high-speed data storage.

Median Price

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Lifecycle Status

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14

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1k+

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Cyclops Electronics Ltd

UK . 16,401 parts In-Stock

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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Sternenhof Electronics

Switzerland . 4,000 parts In-Stock

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Digiode

USA . 2,149 parts In-Stock

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2,149

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EPE Components Inc.

USA . 1,387 parts In-Stock

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Touchstone Systems

USA . 986 parts In-Stock

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986

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Vyrian

USA . 460 parts In-Stock

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460

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Bristol Electronics

USA . 154 parts In-Stock

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154

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ABC Electronics Ltd.

UK . 26 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 18 parts In-Stock

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18

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Goldney Electronics S.L.

Spain . 10 parts In-Stock

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Prism Electronics

USA . 10 parts In-Stock

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NexGen Digital

USA . 1 parts In-Stock

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Advanced Electronics

New Zealand . 4,872 parts In-Stock

1+ parts

$2.874

100+ parts

$2.730

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$2.730

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4,872

$2.874

$2.730

$2.730

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Aztec Data Supply Inc.

USA . 232 parts In-Stock

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$5.350

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$5.350

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Corohmni

South Africa . 980 parts In-Stock

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$5.561

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980

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Semicontronic

India . 679 parts In-Stock

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$6.000

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$5.850

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$5.820

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679

$6.000

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$5.820

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AZTECH Wire

Italy . 638 parts In-Stock

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$14.646

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Ampacity Inc.

Singapore . 147 parts In-Stock

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$23.000

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RC Electronics

USA . 44,725 parts In-Stock

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Kepictronics

USA . 42,585 parts In-Stock

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S.R.D Solutions

India . 30,000 parts In-Stock

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Perfect Parts

USA . 29,267 parts In-Stock

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Epart123

USA . 10,500 parts In-Stock

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$3.850

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$3.850

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$3.850

A-Z Elektronik GmbH

Germany . 9,611 parts In-Stock

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GreenTree Electronics

Israel . 9,000 parts In-Stock

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Corphita

USA . 1,859 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Argo Parts USA

USA . 813 parts In-Stock

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Continental Prestige Electronics

USA . 794 parts In-Stock

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Futuretech Components

Singapore . 720 parts In-Stock

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720

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Bastille Electronics

Australia . 50 parts In-Stock

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50

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Overview

Discover the N25Q128A13ESE40F by Micron Technology, a top-quality flash memory solution designed to enhance your digital experience. With its small outline package shape and square form, this synchronous operating mode device offers incredible performance and reliability. Suitable for industrial applications, it boasts an impressive endurance of 100,000 write/erase cycles and a memory density of 134,217,728 bits. Whether you're storing critical data or running demanding programs, this NOR-type memory chip ensures seamless operation with a maximum clock frequency of 108 MHz. Trust Micron Technology to deliver exceptional value and benefits, making the N25Q128A13ESE40F the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and ensures the product can withstand harsh conditions, making it a reliable choice.

Surface Mount: YES

This product can be easily mounted on a surface, allowing for effortless integration into various electronic devices and systems.

No. of Functions: 1

With a single function, this product offers simplicity and efficiency in its operation.

Package Shape: SQUARE

The square-shaped package optimizes space utilization, making it suitable for compact electronic designs.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures efficient data transfer and synchronization, enhancing the overall performance of the flash memory.

Nominal Supply Voltage / Vsup (V): 3

The nominal supply voltage of 3V provides stable and reliable power to the flash memory, ensuring consistent performance.

Power Supplies (V): 3/3.3

This flash memory supports power supplies of either 3V or 3.3V, offering flexibility in different system configurations.

No. of Terminals: 8

With 8 terminals, this flash memory provides sufficient connectivity options for seamless integration into electronic circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style enables space-saving integration, making it ideal for devices with limited physical space.

Maximum Operating Temperature: 85 °C

This flash memory can operate reliably at high temperatures up to 85°C, ensuring its suitability for industrial applications.

Organization: 16MX8

The 16MX8 organization allows for a large memory capacity and efficient storage of data, making it ideal for data-intensive applications.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, this flash memory is well-suited for use in extreme temperature environments.

Terminal Position: DUAL

The presence of dual terminal positions provides flexibility in the orientation of the flash memory during installation, simplifying the design and assembly process.

Write Protection: HARDWARE/SOFTWARE

The availability of both hardware and software write protection features ensures data security and prevents unauthorized modification, enhancing the reliability of the product.

Maximum Seated Height: 2.16 mm

The compact seated height of 2.16mm allows for easy integration into slim and space-constrained devices.

Maximum Clock Frequency (fCLK): 108 MHz

With a high maximum clock frequency of 108MHz, this flash memory can handle rapid data transfer, making it suitable for demanding applications.

Width: 5.285 mm

The compact width of 5.285mm enables efficient space utilization and compatibility with various electronic devices.

Minimum Supply Voltage (Vsup): 2.7 V

The minimum supply voltage requirement of 2.7V ensures compatibility with a wide range of power sources, enhancing the versatility of the product.

Maximum Time At Peak Reflow Temperature (s): 30

This flash memory can withstand peak reflow temperatures for up to 30 seconds, allowing for reliable soldering during assembly.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this flash memory can withstand high-temperature soldering processes, ensuring proper manufacturing.

Type: NOR TYPE

Being a NOR type flash memory, this product offers fast random access times and high endurance, making it suitable for applications that require frequent data access and modification.

Length: 5.285 mm

The compact length of 5.285mm ensures space efficiency and compatibility with various electronic layouts and designs.

Programming Voltage (V): 3

With a programming voltage of 3V, the flash memory can be easily programmed or reprogrammed, allowing for flexible data storage and updates.

Temperature Grade: INDUSTRIAL

Designed for industrial-grade applications, this flash memory can operate reliably in harsh and demanding environments, making it a robust choice.

Technology: CMOS

Built using CMOS technology, this flash memory offers low power consumption, high noise immunity, and compatibility with a wide range of electronic systems.

Parallel or Serial: SERIAL

The serial interface allows for efficient data transfer, compact design, and simplified circuitry, enhancing the overall performance and versatility of the flash memory.

Terminal Form: GULL WING

The gull wing terminal form provides reliable electrical connections and facilitates automated soldering processes, ensuring consistent and efficient manufacturing.

Maximum Supply Current: 20 mA

With a maximum supply current of 20mA, this flash memory operates within a low power range, minimizing energy consumption and extending battery life.

No. of Words: 16777216 words

The large number of words capacity enables extensive data storage, making this flash memory suitable for applications requiring vast amounts of information.

Memory Width: 8

With a memory width of 8 bits, this flash memory enables efficient and simultaneous data processing, enhancing overall system performance.

Minimum Data Retention Time: 20

The flash memory offers a minimum data retention time of 20 years, ensuring reliable long-term data storage.

Terminal Pitch: 1.27 mm

The terminal pitch of 1.27mm provides ease of connection and compatibility with standard electronic interfaces, simplifying the integration process.

No. of Words Code: 16M

The 16M words code capacity allows for versatile and extensive addressing of data, offering enhanced flexibility and compatibility with various applications.

Maximum Supply Voltage (Vsup): 3.6 V

With a maximum supply voltage of 3.6V, this flash memory can be powered by a wide range of sources, ensuring compatibility and ease of use.

Endurance: 100000 Write/Erase Cycles

The flash memory offers high endurance with the ability to handle up to 100,000 write/erase cycles, ensuring long-lasting and reliable data storage.

Serial Bus Type: SPI

Using the Serial Peripheral Interface (SPI) bus type, this flash memory allows for efficient communication between devices, making it suitable for various electronic systems.

Memory Density: 134217728 bit

With a memory density of 134,217,728 bits, this flash memory offers substantial storage capacity, accommodating extensive data requirements.

Memory IC Type: FLASH

As a flash memory IC type, this product provides non-volatile storage, fast data access times, and high reliability, making it a preferred choice in many applications.

Maximum Standby Current: 0.0001 Amp

With an ultra-low maximum standby current of only 0.0001 Amp, this flash memory minimizes power consumption during idle periods, contributing to energy efficiency and extended battery life.

Technical Specifications

Flash Memory N25Q128A13ESE40F attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

108 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

S-PDSO-G8

Length:

5.285 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

2.16 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

5.285 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

N25Q128A13ESE40F Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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