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N25Q064A13EF640E

Micron Technology

N25Q064A13EF640E by Micron Technology

N25Q064A13EF640E by Micron Technology is a NOR flash memory with 1MX64 organization, SPI serial bus type, and 108 MHz clock frequency. It operates at temperatures ranging from -40 to 85 °C and has a max supply voltage of 3.6 V. Ideal for industrial applications requiring high endurance and fast data transfer speeds.

Median Price

$1.960

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,056 parts In-Stock

1+ parts

$1.960

100+ parts

$1.710

1k+ parts

$1.570

10k+ parts

$1.500

2,056

$1.960

$1.710

$1.570

$1.500

Arrow

USA . 12,752 parts In-Stock

1+ parts

$3.500

100+ parts

$1.750

1k+ parts

$1.640

10k+ parts

$1.600

12,752

$3.500

$1.750

$1.640

$1.600

Verical

USA . 12,752 parts In-Stock

1+ parts

-

100+ parts

$1.750

1k+ parts

$1.640

10k+ parts

$1.600

12,752

-

$1.750

$1.640

$1.600

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 81 parts In-Stock

1+ parts

$1.390

100+ parts

-

1k+ parts

-

10k+ parts

-

81

$1.390

-

-

-

NAC Semi

USA . 2,873 parts In-Stock

1+ parts

$2.990

100+ parts

$1.500

1k+ parts

-

10k+ parts

-

2,873

$2.990

$1.500

-

-

Digiode

USA . 1,270 parts In-Stock

1+ parts

$3.325

100+ parts

-

1k+ parts

-

10k+ parts

-

1,270

$3.325

-

-

-

Chip Stock

USA . 24,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

24,700

-

-

-

-

Kruse

Germany . 20,580 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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20,580

-

-

-

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Kruse Electronics AG

Switzerland . 17,640 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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17,640

-

-

-

-

ARCO, INC.

USA . 17,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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17,600

-

-

-

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Vyrian

USA . 13,591 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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13,591

-

-

-

-

Prism Electronics

USA . 3 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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3

-

-

-

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Inventory MP

USA . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

1

-

-

-

-

Bristol Electronics

USA . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$1.362

100+ parts

-

1k+ parts

$1.308

10k+ parts

-

2,000

$1.362

-

$1.308

-

Continental Prestige Electronics

USA . 4,308 parts In-Stock

1+ parts

$1.390

100+ parts

-

1k+ parts

-

10k+ parts

$1.362

4,308

$1.390

-

-

$1.362

Argo Parts USA

USA . 1,475 parts In-Stock

1+ parts

$1.390

100+ parts

-

1k+ parts

-

10k+ parts

-

1,475

$1.390

-

-

-

Ampacity Inc.

Singapore . 13,221 parts In-Stock

1+ parts

$1.490

100+ parts

-

1k+ parts

-

10k+ parts

-

13,221

$1.490

-

-

-

Semicontronic

India . 13,207 parts In-Stock

1+ parts

$1.490

100+ parts

$1.453

1k+ parts

$1.445

10k+ parts

-

13,207

$1.490

$1.453

$1.445

-

Corphita

USA . 991 parts In-Stock

1+ parts

$3.150

100+ parts

-

1k+ parts

-

10k+ parts

-

991

$3.150

-

-

-

Corohmni

South Africa . 525 parts In-Stock

1+ parts

$4.238

100+ parts

-

1k+ parts

-

10k+ parts

-

525

$4.238

-

-

-

Aztec Data Supply Inc.

USA . 1,065 parts In-Stock

1+ parts

$5.733

100+ parts

-

1k+ parts

-

10k+ parts

-

1,065

$5.733

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 25,852 parts In-Stock

1+ parts

-

100+ parts

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25,852

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-

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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25,000

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-

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Perfect Parts

USA . 19,760 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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19,760

-

-

-

-

RC Electronics

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

$0.830

1k+ parts

$0.780

10k+ parts

$0.770

8,000

-

$0.830

$0.780

$0.770

A-Z Elektronik GmbH

Germany . 5,966 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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5,966

-

-

-

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Metaverse IC Inc.

Canada . 3,711 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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3,711

-

-

-

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Microchip USA

USA . 2,832 parts In-Stock

1+ parts

-

100+ parts

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2,832

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-

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Kepictronics

USA . 1,954 parts In-Stock

1+ parts

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100+ parts

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1,954

-

-

-

-

Futuretech Components

Singapore . 720 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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720

-

-

-

-

iodParts Technologies Inc.

India . 150 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

150

-

-

-

-

Overview

Discover the cutting-edge N25Q064A13EF640E by Micron Technology, a top-of-the-line flash memory device that offers unparalleled quality and reliability. Ideal for industrial applications, this product boasts a small outline, very thin profile package style and a maximum clock frequency of 108 MHz. With 100,000 write/erase cycles and a wide operating temperature range, this NOR type memory IC is designed to meet all your needs. Trust in Micron's expertise and experience in the industry to provide you with a high-performance solution that delivers exceptional value and benefits to customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the flash memory, ensuring a longer lifespan.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer speeds and more efficient performance.

Maximum Operating Temperature: 85 °C

This high operating temperature range makes the flash memory suitable for industrial applications where it may be exposed to extreme conditions.

Memory Density: 67108864 bit

High memory density allows for storing a large amount of data in a compact space, making it a cost-effective solution for data storage.

Endurance: 100000 Write/Erase Cycles

The high endurance rating ensures that the flash memory can withstand frequent write and erase operations, resulting in reliable performance over time.

Technical Specifications

Flash Memory N25Q064A13EF640E attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

108 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-N8

Length:

6 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

64

No. of Functions:

1

No. of Terminals:

8

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX64

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

NOR TYPE

Width:

5 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

N25Q064A13EF640E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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