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N25Q128A13B1240E

Micron Technology

N25Q128A13B1240E by Micron Technology

N25Q128A13B1240E by Micron Technology is a NOR type flash memory with 16MX8 organization and a memory density of 134217728 bits. It operates at a max clock frequency of 108 MHz and has a min data retention time of 20 years. This flash memory is commonly used in industrial applications for its high endurance of 100000 write/erase cycles.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Chip Stock

USA . 20,600 parts In-Stock

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Vyrian

USA . 4,788 parts In-Stock

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Digiode

USA . 1,124 parts In-Stock

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Sensible Micro Corp

USA . 722 parts In-Stock

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722

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Nova Conductors

Japan . 600 parts In-Stock

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600

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,116 parts In-Stock

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$2.210

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Corohmni

South Africa . 482 parts In-Stock

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$2.467

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Ampacity Inc.

Singapore . 1,441 parts In-Stock

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$4.000

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AZTECH Wire

Italy . 805 parts In-Stock

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$17.211

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805

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Semicontronic

India . 1,576 parts In-Stock

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$25.000

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$24.375

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$24.250

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QUARKTWIN TECHNOLOGY LTD

USA . 16,844 parts In-Stock

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Continental Prestige Electronics

USA . 6,980 parts In-Stock

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Microchip USA

USA . 2,967 parts In-Stock

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Argo Parts USA

USA . 2,130 parts In-Stock

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Corphita

USA . 2,054 parts In-Stock

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Bastille Electronics

Australia . 53 parts In-Stock

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Overview

Discover the power of the N25Q128A13B1240E by Micron Technology, a flash memory that combines top-notch quality and cutting-edge technology. As a trusted manufacturer, Micron Technology brings you a product that guarantees optimal performance and reliability. Ideal for a range of applications, this flash memory offers unparalleled value to customers. With its impressive endurance of 100,000 write/erase cycles, versatile serial bus type, and high memory density of 134,217,728 bits, the N25Q128A13B1240E is your go-to solution for all your storage needs. Experience seamless data transfer and enhanced functionality with this innovative product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product has a plastic/epoxy package body material, which makes it lightweight and durable, ideal for portable devices and long-term use.

Surface Mount: YES

With surface mount capability, this product can be easily integrated into PCB designs, saving space and simplifying assembly.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement and utilization of space on the PCB, making it suitable for compact designs.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures fast and reliable data transfer, enhancing the overall performance of the product.

Nominal Supply Voltage / Vsup (V): 3

This product operates at a nominal supply voltage of 3V, providing optimal power efficiency and compatibility with a wide range of electronic systems.

Power Supplies (V): 3/3.3

The availability of both 3V and 3.3V power supplies allows for flexibility in design, accommodating various voltage requirements of different applications.

No. of Terminals: 24

With 24 terminals, this product offers sufficient connectivity options, enabling seamless integration and reliable communication within the system.

Package Style (Meter): GRID ARRAY, THIN PROFILE

The grid array thin profile package style offers excellent thermal dissipation and mechanical stability, making it suitable for high-density applications and environments where space is limited.

Maximum Operating Temperature: 85 °C

This product can operate reliably at temperatures as high as 85°C, ensuring suitability for demanding industrial and automotive environments.

Organization: 16MX8

The memory organization of 16MX8 means that it provides a storage capacity of 16 megabits, with each word consisting of 8 bits, making it suitable for storing a large amount of data.

Minimum Operating Temperature: -40 °C

The product is designed to operate reliably even in harsh conditions, as it can withstand minimum temperatures as low as -40°C, making it suitable for extreme environments.

Terminal Finish: TIN SILVER COPPER

With a terminal finish of tin silver copper, this product offers excellent corrosion resistance, ensuring durability and longevity.

Terminal Position: BOTTOM

The terminal position at the bottom allows for easy installation and integration into the system, providing convenience during assembly.

Write Protection: HARDWARE/SOFTWARE

The write protection feature, both hardware and software, ensures data integrity and prevents accidental modification, enhancing the security and reliability of the product.

Maximum Seated Height: 1.2 mm

With a maximum seated height of 1.2mm, this product has a low profile, making it suitable for applications with height constraints.

Maximum Clock Frequency (fCLK): 108 MHz

The maximum clock frequency of 108 MHz enables fast data transfer and processing, enhancing the overall performance of the product.

Width: 6 mm

The compact width of 6mm ensures efficient utilization of space in electronic devices, making it suitable for compact designs.

Minimum Supply Voltage (Vsup): 2.7 V

The product can operate reliably even at a minimum supply voltage of 2.7V, ensuring compatibility with low-power applications and maximizing flexibility in system design.

Type: NOR TYPE

This product belongs to the NOR type family, which offers fast read and random access times, making it suitable for applications requiring both high-speed and random access memory operations.

Length: 8 mm

The compact length of 8mm ensures efficient utilization of space in electronic devices, making it suitable for compact designs.

Programming Voltage (V): 3

With a programming voltage of 3V, this product offers optimal programming efficiency and compatibility with various programming setups.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures the product's reliability and performance in demanding temperature environments, making it suitable for industrial applications.

Technology: CMOS

The CMOS technology used in this product provides low power consumption, high noise immunity, and compatibility with various electronic systems, enhancing its overall reliability and performance.

Parallel or Serial: SERIAL

This product operates in serial mode, offering simplicity in connectivity and data transfer, making it suitable for applications that require streamlined communication.

Terminal Form: BALL

The ball terminal form provides reliable electrical connections and facilitates soldering during the assembly process, ensuring robust and secure integration into the system.

Maximum Supply Current: 20 mA

With a maximum supply current of 20mA, this product offers efficient power consumption, ensuring minimal power wastage and maximizing battery life in portable devices.

No. of Words: 16777216 words

The product has a word capacity of 16,777,216 words, allowing for significant data storage and retrieval capabilities, making it suitable for applications requiring large memory capacities.

Memory Width: 8

With a memory width of 8 bits, this product can process and store data in byte-sized increments, providing compatibility with various data formats and systems.

Minimum Data Retention Time: 20

The product ensures data integrity by offering a minimum data retention time of 20 years, making it suitable for long-term storage and archival applications.

Terminal Pitch: 1 mm

The terminal pitch of 1mm allows for precise and secure PCB mounting, ensuring reliable electrical connections and facilitating efficient assembly.

No. of Words Code: 16M

The product is recognized and identified as a 16 million-word code memory, enabling seamless integration within a wider system and compatibility with existing designs.

Maximum Supply Voltage (Vsup): 3.6 V

The product can safely operate at a maximum supply voltage of 3.6V, providing compatibility with a wide range of power supply configurations.

Endurance: 100000 Write/Erase Cycles

With an endurance of up to 100,000 write/erase cycles, this product offers a high level of durability and reliability, ensuring data integrity and suitability for frequent read/write operations.

Boot Block: BOTTOM

The boot block located at the bottom provides easy access and storage for the essential bootloader code, simplifying the system's initialization process.

Serial Bus Type: SPI

This product operates using the Serial Peripheral Interface (SPI) bus type, allowing for simple and efficient communication with other SPI-compatible devices.

Memory Density: 134217728 bit

With a memory density of 134,217,728 bits, this product provides ample storage capacity for a wide range of applications, accommodating large data volumes.

Memory IC Type: FLASH

Being a flash memory IC type, this product offers non-volatile storage and fast access times, making it suitable for applications that require persistent data storage with quick retrieval capabilities.

Maximum Standby Current: 0.0001 Amp

With a maximum standby current of 0.0001 Amp, this product ensures energy efficiency during idle or standby periods, minimizing power consumption and preserving battery life.

Technical Specifications

Flash Memory N25Q128A13B1240E attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Boot Block:

BOTTOM

Maximum Clock Frequency (fCLK):

108 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PBGA-B24

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA24,5X5,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Type:

NOR TYPE

Width:

6 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

N25Q128A13B1240E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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