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MT25QU01GBBB1EW9-0SIT

Micron Technology

MT25QU01GBBB1EW9-0SIT by Micron Technology

Micron Technology's MT25QU01GBBB1EW9-0SIT is a 1Gx1 Flash Memory IC with 1073741824-bit memory density. Operating at 166MHz clock frequency, it has a small outline package style and operates in industrial temperature grade applications. The memory chip features synchronous operation, serial interface, and low power consumption at 1.8V supply voltage.

Median Price

$15.808

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,678 parts In-Stock

1+ parts

$11.500

100+ parts

$9.850

1k+ parts

$9.470

10k+ parts

-

2,678

$11.500

$9.850

$9.470

-

Farnell

UK . 1,852 parts In-Stock

1+ parts

$14.260

100+ parts

$11.270

1k+ parts

$10.720

10k+ parts

-

1,852

$14.260

$11.270

$10.720

-

Arrow

USA . 3,680 parts In-Stock

1+ parts

$15.808

100+ parts

$12.495

1k+ parts

$11.886

10k+ parts

$11.886

3,680

$15.808

$12.495

$11.886

$11.886

Verical

USA . 3,680 parts In-Stock

1+ parts

$15.808

100+ parts

$12.495

1k+ parts

$11.886

10k+ parts

$11.886

3,680

$15.808

$12.495

$11.886

$11.886

Element14

Singapore . 1,852 parts In-Stock

1+ parts

$23.150

100+ parts

$18.300

1k+ parts

-

10k+ parts

-

1,852

$23.150

$18.300

-

-

Newark

USA . 595 parts In-Stock

1+ parts

$37.650

100+ parts

-

1k+ parts

-

10k+ parts

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595

$37.650

-

-

-

Future Electronics

Canada . 1,920 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$6.430

10k+ parts

-

1,920

-

-

$6.430

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,416 parts In-Stock

1+ parts

$11.752

100+ parts

-

1k+ parts

-

10k+ parts

-

1,416

$11.752

-

-

-

Nova Conductors

Japan . 22 parts In-Stock

1+ parts

$15.510

100+ parts

-

1k+ parts

-

10k+ parts

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22

$15.510

-

-

-

Chip Stock

USA . 24,900 parts In-Stock

1+ parts

-

100+ parts

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24,900

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-

-

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IBS Electronics

USA . 1,920 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$166.337

10k+ parts

-

1,920

-

-

$166.337

-

Vyrian

USA . 1,871 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,871

-

-

-

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Cyclops Electronics Ltd

UK . 1,520 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,520

-

-

-

-

Bristol Electronics

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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100

-

-

-

-

Atlantic Semiconductor

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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100

-

-

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Semtec, LLC

USA . 15 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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15

-

-

-

-

NexGen Digital

USA . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 3,508 parts In-Stock

1+ parts

$3.760

100+ parts

-

1k+ parts

-

10k+ parts

-

3,508

$3.760

-

-

-

Semicontronic

India . 2,153 parts In-Stock

1+ parts

$7.980

100+ parts

$7.780

1k+ parts

$7.741

10k+ parts

-

2,153

$7.980

$7.780

$7.741

-

Corphita

USA . 1,395 parts In-Stock

1+ parts

$11.133

100+ parts

-

1k+ parts

-

10k+ parts

-

1,395

$11.133

-

-

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Corohmni

South Africa . 98 parts In-Stock

1+ parts

$15.510

100+ parts

-

1k+ parts

-

10k+ parts

-

98

$15.510

-

-

-

Continental Prestige Electronics

USA . 5,964 parts In-Stock

1+ parts

$15.510

100+ parts

-

1k+ parts

-

10k+ parts

$15.200

5,964

$15.510

-

-

$15.200

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$15.510

100+ parts

-

1k+ parts

-

10k+ parts

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2,000

$15.510

-

-

-

Advanced Electronics

New Zealand . 31 parts In-Stock

1+ parts

$15.820

100+ parts

$15.820

1k+ parts

$15.820

10k+ parts

-

31

$15.820

$15.820

$15.820

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Ampacity Inc.

Singapore . 1,927 parts In-Stock

1+ parts

$22.880

100+ parts

-

1k+ parts

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1,927

$22.880

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A-Z Elektronik GmbH

Germany . 1,837 parts In-Stock

1+ parts

-

100+ parts

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1,837

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-

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RC Electronics

USA . 1,375 parts In-Stock

1+ parts

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1,375

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-

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Argo Parts USA

USA . 982 parts In-Stock

1+ parts

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982

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Infinite Electronics LLP (Excess)

. 612 parts In-Stock

1+ parts

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100+ parts

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612

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Overview

Discover the cutting-edge MT25QU01GBBB1EW9-0SIT by Micron Technology, a top-tier Flash Memory solution designed to elevate your electronic devices to new heights. With a focus on quality and reliability, Micron Technology stands as a trusted manufacturer in the industry, ensuring seamless performance and durability. This versatile memory chip is ideal for various applications, offering fast data access speeds and low power consumption. Upgrade your products with the MT25QU01GBBB1EW9-0SIT and experience the value of superior technology firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for portable devices.

Surface Mount: YES

The surface mount capability allows for easy and efficient installation on PCBs, saving space and simplifying assembly.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and synchronization, improving overall performance and reliability.

Nominal Supply Voltage (Vsup): 1.8V

The low nominal supply voltage helps in reducing power consumption and extending battery life in electronic devices.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature range allows for reliable operation even in harsh environments.

Memory Density: 1073741824 bit

The high memory density provides ample storage capacity for data-intensive applications.

Technology: CMOS

The CMOS technology used in the product ensures low power consumption and high speed operation.

Parallel or Serial: SERIAL

Serial interface enables efficient data transfer and communication with other components in the system.

Technical Specifications

Flash Memory MT25QU01GBBB1EW9-0SIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

166 MHz

JESD-30 Code:

R-PDSO-N8

Length:

8 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

1073741824 words

No. of Words Code:

1G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1GX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Programming Voltage (V):

1.8

Maximum Seated Height:

.8 mm

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

6 mm

Trade Compliance

MT25QU01GBBB1EW9-0SIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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