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MT25QU02GCBB8E12-0AUT

Micron Technology

MT25QU02GCBB8E12-0AUT by Micron Technology

Micron Technology's MT25QU02GCBB8E12-0AUT is a 256MX8 NOR flash memory with 1.8V supply voltage, operating at up to 166MHz clock frequency. Ideal for automotive applications, it offers 100000 write/erase cycles and SPI serial bus interface.

Median Price

$44.370

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 75 parts In-Stock

1+ parts

$28.630

100+ parts

$24.730

1k+ parts

$23.900

10k+ parts

-

75

$28.630

$24.730

$23.900

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Arrow

USA . 556 parts In-Stock

1+ parts

$44.370

100+ parts

-

1k+ parts

-

10k+ parts

-

556

$44.370

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-

-

Verical

USA . 556 parts In-Stock

1+ parts

$44.370

100+ parts

-

1k+ parts

-

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556

$44.370

-

-

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Farnell

UK . 491 parts In-Stock

1+ parts

$48.853

100+ parts

$41.337

1k+ parts

-

10k+ parts

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491

$48.853

$41.337

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-

Mouser Electronics

USA . 3 parts In-Stock

1+ parts

$68.950

100+ parts

-

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-

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3

$68.950

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,246 parts In-Stock

1+ parts

$28.604

100+ parts

-

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-

10k+ parts

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1,246

$28.604

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-

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Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$43.633

100+ parts

-

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450

$43.633

-

-

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Vyrian

USA . 1,357 parts In-Stock

1+ parts

-

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1,357

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-

-

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Component Sense

UK . 1 parts In-Stock

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-

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1

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 531 parts In-Stock

1+ parts

$2.644

100+ parts

-

1k+ parts

-

10k+ parts

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531

$2.644

-

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Aztec Data Supply Inc.

USA . 3,664 parts In-Stock

1+ parts

$5.130

100+ parts

-

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3,664

$5.130

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Semicontronic

India . 1,002 parts In-Stock

1+ parts

$23.330

100+ parts

$22.747

1k+ parts

$22.630

10k+ parts

-

1,002

$23.330

$22.747

$22.630

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Ampacity Inc.

Singapore . 1,206 parts In-Stock

1+ parts

$25.590

100+ parts

-

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1,206

$25.590

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Corphita

USA . 1,212 parts In-Stock

1+ parts

$27.099

100+ parts

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1,212

$27.099

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Continental Prestige Electronics

USA . 500 parts In-Stock

1+ parts

$39.280

100+ parts

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500

$39.280

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Bastille Electronics

Australia . 300 parts In-Stock

1+ parts

$43.630

100+ parts

$41.448

1k+ parts

-

10k+ parts

$38.831

300

$43.630

$41.448

-

$38.831

Authorized Procurement Solutions

USA . 2,244 parts In-Stock

1+ parts

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2,244

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Argo Parts USA

USA . 475 parts In-Stock

1+ parts

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475

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RC Electronics

USA . 332 parts In-Stock

1+ parts

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332

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Overview

Experience unparalleled performance and reliability with the MT25QU02GCBB8E12-0AUT by Micron Technology. As a leader in flash memory technology, Micron ensures top-notch quality and cutting-edge innovation in every product. Ideal for automotive applications, this flash memory offers 256MX8 organization, 100,000 write/erase cycles endurance, and a wide operating temperature range. With its compact design and advanced features like hardware/software write protection and synchronous operation mode, the MT25QU02GCBB8E12-0AUT provides unmatched value and benefits to customers seeking high-speed, reliable memory solutions. Trust Micron to deliver excellence in every detail.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory, making it suitable for various environments.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer and communication with other devices, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 1.8

Low voltage requirement helps in conserving power and reducing energy consumption, making it ideal for portable devices.

Write Protection: HARDWARE/SOFTWARE

Offering both hardware and software write protection ensures security of data stored in the flash memory, preventing unauthorized access or changes.

Temperature Grade: AUTOMOTIVE

Designed to withstand automotive temperature and environmental conditions, making it reliable for automotive applications.

Endurance: 100000 Write/Erase Cycles

High endurance allows for frequent read and write operations, extending the lifespan of the flash memory.

Serial Bus Type: SPI

SPI (Serial Peripheral Interface) allows for high-speed serial communication, facilitating efficient data transfer between devices.

Technical Specifications

Flash Memory MT25QU02GCBB8E12-0AUT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Alternate Memory Width:

1

Maximum Clock Frequency (fCLK):

166 MHz

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PBGA-B24

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA24,5X5,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

1.8

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00013 Amp

Maximum Supply Current:

94 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

6 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

MT25QU02GCBB8E12-0AUT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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