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M25P40-VMN6PB

Micron Technology

M25P40-VMN6PB by Micron Technology

Micron Technology's M25P40-VMN6PB is a NOR type Flash Memory with 512Kx8 organization, operating at 50 MHz. It has a supply voltage range of 2.3V to 3.6V and offers 100000 Write/Erase cycles endurance. Ideal for industrial applications requiring reliable serial SPI communication and small outline package style.

Median Price

$0.510

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 500 parts In-Stock

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$0.380

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500

$0.380

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Mobius Materials

USA . 965 parts In-Stock

1+ parts

$0.640

100+ parts

$0.520

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965

$0.640

$0.520

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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Chip Stock

USA . 4,000 parts In-Stock

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Digiode

USA . 1,879 parts In-Stock

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Vyrian

USA . 1,233 parts In-Stock

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Bristol Electronics

USA . 650 parts In-Stock

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650

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ComSIT Distribution GmbH

Germany . 103 parts In-Stock

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Pegasus Components GmbH

Germany . 90 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 52 parts In-Stock

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Holdelec - ElecDif-Pro

France . 52 parts In-Stock

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Prism Electronics

USA . 22 parts In-Stock

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Sunrise Surplus Inc.

USA . 10 parts In-Stock

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Distributors (Availability)

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.372

100+ parts

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1k+ parts

$0.358

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100

$0.372

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$0.358

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Argo Parts USA

USA . 1,366 parts In-Stock

1+ parts

$0.380

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$0.369

1,366

$0.380

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$0.369

Continental Prestige Electronics

USA . 1,058 parts In-Stock

1+ parts

$0.380

100+ parts

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$0.372

1,058

$0.380

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$0.372

Semicontronic

India . 1,321 parts In-Stock

1+ parts

$2.000

100+ parts

$1.950

1k+ parts

$1.940

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1,321

$2.000

$1.950

$1.940

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Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$2.682

100+ parts

$2.548

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$2.548

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600

$2.682

$2.548

$2.548

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Aztec Data Supply Inc.

USA . 4,966 parts In-Stock

1+ parts

$2.790

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4,966

$2.790

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Corohmni

South Africa . 992 parts In-Stock

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$4.172

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992

$4.172

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AZTECH Wire

Italy . 632 parts In-Stock

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$13.650

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632

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RC Electronics

USA . 61,608 parts In-Stock

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S.R.D Solutions

India . 30,000 parts In-Stock

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Perfect Parts

USA . 23,563 parts In-Stock

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Epart123

USA . 20,000 parts In-Stock

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$1.540

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$1.540

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$1.540

GreenTree Electronics

Israel . 20,000 parts In-Stock

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Kepictronics

USA . 10,411 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,244 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,829 parts In-Stock

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Infinite Electronics LLP (Excess)

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Corphita

USA . 757 parts In-Stock

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Assy Fe

Spain . 684 parts In-Stock

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Lucentia Tech

USA . 500 parts In-Stock

1+ parts

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$0.093

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$0.093

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$0.093

500

-

$0.093

$0.093

$0.093

iodParts Technologies Inc.

India . 350 parts In-Stock

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350

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Robosynatics

Brazil . 250 parts In-Stock

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Microchip USA

USA . 118 parts In-Stock

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Overview

Unlock unparalleled performance and reliability with the M25P40-VMN6PB by Micron Technology. As a leader in flash memory technology, Micron delivers cutting-edge solutions for a variety of applications. This product offers exceptional value, benefits, and advantages to customers, ensuring high-quality data storage with 100,000 write/erase cycles. Experience the difference with Micron Technology and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package lightweight and durable, ensuring the safety of the flash memory chip inside.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on PCBs, saving time and effort during manufacturing.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred at a consistent and efficient rate, optimizing performance.

Nominal Supply Voltage / Vsup (V): 2.7

Operating at a nominal supply voltage of 2.7V helps in energy efficiency and extends the battery life of devices using this flash memory.

Power Supplies (V): 2.5/3.3

Compatibility with power supplies of 2.5V and 3.3V gives flexibility in different applications and devices where the flash memory can be used.

No. of Terminals: 8

Having 8 terminals provides necessary connections for data transfer and control signals, enabling smooth communication with the host system.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this flash memory chip can function reliably in various environments and conditions.

Organization: 512KX8

The organization of 512Kx8 allows for efficient storage and retrieval of data in byte format, catering to a wide range of applications.

Minimum Operating Temperature: -40 °C

The flash memory chip can withstand extremely low temperatures of -40°C, ensuring operation even in harsh cold climates.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

Nickel, Palladium, and Gold terminal finish provides excellent conductivity and corrosion resistance, ensuring long-term reliability of connections.

Technical Specifications

Flash Memory M25P40-VMN6PB attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

50 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

8

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

15 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

2.7

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

3.9 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M25P40-VMN6PB Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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