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M25P64-VME6TG

Micron Technology

M25P64-VME6TG by Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Memory Density: 67108864 bit;

Median Price

$5.602

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (In-Stock)

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Flip Electronics

USA . 10 parts In-Stock

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$0.925

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10

$0.925

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Mobius Materials

USA . 218 parts In-Stock

1+ parts

$10.280

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$8.250

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$10.280

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Cyclops Electronics Ltd

UK . 18,638 parts In-Stock

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Chip Stock

USA . 15,798 parts In-Stock

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Resion

USA . 5,450 parts In-Stock

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Touchstone Systems

USA . 4,432 parts In-Stock

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Digiode

USA . 4,304 parts In-Stock

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ComSIT Distribution GmbH

Germany . 4,235 parts In-Stock

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Anansix

USA . 2,888 parts In-Stock

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Vyrian

USA . 1,533 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Prism Electronics

USA . 84 parts In-Stock

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Sensible Micro Corp

USA . 82 parts In-Stock

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Micros

Poland . 10 parts In-Stock

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BCID Electronics Ltd.

Israel . 10 parts In-Stock

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10

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Speed Components Ltd

Israel . 5 parts In-Stock

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5

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NPI Materials, Inc.

USA . 3 parts In-Stock

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3

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NexGen Digital

USA . 1 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 1,452 parts In-Stock

1+ parts

$3.750

100+ parts

$3.560

1k+ parts

$3.460

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-

1,452

$3.750

$3.560

$3.460

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Aztec Data Supply Inc.

USA . 4,945 parts In-Stock

1+ parts

$4.740

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4,945

$4.740

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IDEA Electronic Components Group

UK . 1,729 parts In-Stock

1+ parts

$4.817

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$4.335

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$4.817

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$4.335

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Corohmni

South Africa . 52 parts In-Stock

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$5.600

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MKK Technologies

India . 1,819 parts In-Stock

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$9.058

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$9.058

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DigiPath Technology Company

USA . 1,819 parts In-Stock

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$9.058

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$9.058

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AZTECH Wire

Italy . 542 parts In-Stock

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$10.544

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542

$10.544

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Semicontronic

India . 187 parts In-Stock

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$29.000

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$28.275

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$28.130

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$29.000

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$28.130

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S.R.D Solutions

India . 38,000 parts In-Stock

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Kepictronics

USA . 15,415 parts In-Stock

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Perfect Parts

USA . 9,855 parts In-Stock

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RC Electronics

USA . 9,497 parts In-Stock

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Corphita

USA . 3,997 parts In-Stock

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Argo Parts USA

USA . 3,026 parts In-Stock

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Continental Prestige Electronics

USA . 2,506 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,692 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,128 parts In-Stock

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Benley Electronics

USA . 1,062 parts In-Stock

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Parana Technologies

USA . 734 parts In-Stock

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$5.760

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734

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Bastille Electronics

Australia . 120 parts In-Stock

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GreenTree Electronics

Israel . 50 parts In-Stock

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Technical Specifications

Flash Memory M25P64-VME6TG attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

50 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-N8

Length:

8 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

6 mm

Maximum Write Cycle Time (tWC):

15 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M25P64-VME6TG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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