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M25P16-VMN6P

Micron Technology

M25P16-VMN6P by Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Organization: 2MX8;

Median Price

$0.574

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 1,000 parts In-Stock

1+ parts

$0.574

100+ parts

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1,000

$0.574

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Chip Stock

USA . 14,900 parts In-Stock

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14,900

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Vyrian

USA . 6,445 parts In-Stock

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6,445

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Digiode

USA . 2,405 parts In-Stock

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2,405

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Avant Electronics Limited

UK . 1,181 parts In-Stock

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1,181

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Semi Source

USA . 403 parts In-Stock

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403

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Bristol Electronics

USA . 264 parts In-Stock

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264

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Atlantic Semiconductor

USA . 264 parts In-Stock

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264

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4 Star Electronics, Inc.

USA . 200 parts In-Stock

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200

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Anansix

USA . 173 parts In-Stock

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173

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Speed Components Ltd

Israel . 170 parts In-Stock

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170

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ComSIT Distribution GmbH

Germany . 136 parts In-Stock

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136

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Sensible Micro Corp

USA . 114 parts In-Stock

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114

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Prism Electronics

USA . 73 parts In-Stock

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73

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LWI Electronics Inc

India . 65 parts In-Stock

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65

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Classic Components Corporation

USA . 54 parts In-Stock

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54

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Cyclops Electronics Ltd

UK . 42 parts In-Stock

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42

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Cogito LLC

Ukraine . 30 parts In-Stock

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30

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Lantek

USA . 29 parts In-Stock

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29

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ACDS - Activité Composants Distribution Service

France . 6 parts In-Stock

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6

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Holdelec - ElecDif-Pro

France . 6 parts In-Stock

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6

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NexGen Digital

USA . 2 parts In-Stock

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2

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Inventory MP

USA . 2 parts In-Stock

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2

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 4,704 parts In-Stock

1+ parts

$0.574

100+ parts

-

1k+ parts

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10k+ parts

$0.563

4,704

$0.574

-

-

$0.563

Argo Parts USA

USA . 3,421 parts In-Stock

1+ parts

$0.574

100+ parts

-

1k+ parts

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10k+ parts

$0.557

3,421

$0.574

-

-

$0.557

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.574

100+ parts

-

1k+ parts

$0.545

10k+ parts

$0.534

500

$0.574

-

$0.545

$0.534

Component Stockers USA

USA . 2,824 parts In-Stock

1+ parts

$1.350

100+ parts

$1.280

1k+ parts

$1.240

10k+ parts

-

2,824

$1.350

$1.280

$1.240

-

Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$2.426

100+ parts

$2.304

1k+ parts

$2.304

10k+ parts

-

5,000

$2.426

$2.304

$2.304

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IDEA Electronic Components Group

UK . 1,250 parts In-Stock

1+ parts

$2.644

100+ parts

-

1k+ parts

$2.380

10k+ parts

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1,250

$2.644

-

$2.380

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Aztec Data Supply Inc.

USA . 1,053 parts In-Stock

1+ parts

$2.940

100+ parts

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1,053

$2.940

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Corohmni

South Africa . 392 parts In-Stock

1+ parts

$2.989

100+ parts

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392

$2.989

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MKK Technologies

India . 986 parts In-Stock

1+ parts

$4.972

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986

$4.972

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DigiPath Technology Company

USA . 986 parts In-Stock

1+ parts

$4.972

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986

$4.972

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AZTECH Wire

Italy . 676 parts In-Stock

1+ parts

$8.440

100+ parts

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676

$8.440

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Semicontronic

India . 2,687 parts In-Stock

1+ parts

$17.000

100+ parts

$16.575

1k+ parts

$16.490

10k+ parts

-

2,687

$17.000

$16.575

$16.490

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QUARKTWIN TECHNOLOGY LTD

USA . 28,599 parts In-Stock

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Perfect Parts

USA . 25,987 parts In-Stock

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25,987

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Kepictronics

USA . 8,000 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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A-Z Elektronik GmbH

Germany . 6,008 parts In-Stock

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6,008

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Corphita

USA . 5,952 parts In-Stock

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5,952

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S.R.D Solutions

India . 4,500 parts In-Stock

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4,500

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Alle Elektronik GmbH

Germany . 4,005 parts In-Stock

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4,005

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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Parana Technologies

USA . 832 parts In-Stock

1+ parts

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$3.161

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832

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$3.161

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Metaverse IC Inc.

Canada . 233 parts In-Stock

1+ parts

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233

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GreenTree Electronics

Israel . 135 parts In-Stock

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135

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iodParts Technologies Inc.

India . 29 parts In-Stock

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29

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Technical Specifications

Flash Memory M25P16-VMN6P attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

25 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

Length:

4.9 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

15 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

15 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M25P16-VMN6P Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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