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M25P40-VMN6PBA

Micron Technology

M25P40-VMN6PBA by Micron Technology

M25P40-VMN6PBA by Micron Technology is a NOR type Flash Memory with 512Kx8 organization, SPI serial bus type, and 50 MHz clock frequency. It is used in industrial applications for storing data securely with 100000 write/erase cycles endurance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,701 parts In-Stock

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5,701

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Digiode

USA . 765 parts In-Stock

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765

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Advanced Electronics

New Zealand . 60 parts In-Stock

1+ parts

$4.046

100+ parts

$3.844

1k+ parts

$3.844

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60

$4.046

$3.844

$3.844

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Corohmni

South Africa . 214 parts In-Stock

1+ parts

$4.379

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214

$4.379

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Aztec Data Supply Inc.

USA . 2,392 parts In-Stock

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$4.710

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2,392

$4.710

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Ampacity Inc.

Singapore . 1,278 parts In-Stock

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$6.000

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1,278

$6.000

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AZTECH Wire

Italy . 353 parts In-Stock

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$7.138

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353

$7.138

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Semicontronic

India . 1,139 parts In-Stock

1+ parts

$28.000

100+ parts

$27.300

1k+ parts

$27.160

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1,139

$28.000

$27.300

$27.160

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Continental Prestige Electronics

USA . 4,268 parts In-Stock

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4,268

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Corphita

USA . 594 parts In-Stock

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594

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Bastille Electronics

Australia . 500 parts In-Stock

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500

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Microchip USA

USA . 337 parts In-Stock

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337

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Robosynatics

Brazil . 250 parts In-Stock

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250

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Lucentia Tech

USA . 250 parts In-Stock

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$0.742

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$0.742

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$0.742

250

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$0.742

$0.742

$0.742

Argo Parts USA

USA . 217 parts In-Stock

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217

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Overview

Experience the superior quality and reliability of Micron Technology with the M25P40-VMN6PBA flash memory. This versatile product offers endless possibilities in applications such as automotive, industrial, and consumer electronics. With its advanced features and high performance, this NOR type flash memory will exceed your expectations. Trust in Micron Technology to deliver cutting-edge technology that meets your needs and provides exceptional value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package lightweight and durable, ideal for portable devices.

Surface Mount: YES

Surface mount design makes it easy to integrate into circuit boards, saving space and reducing assembly time.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this flash memory can withstand harsh environmental conditions.

Write Protection: HARDWARE/SOFTWARE

Write protection feature provides added security for the stored data and prevents accidental overwriting.

Memory Density: 4194304 bit

High memory density allows for storing a large amount of data in a compact form factor.

Endurance: 100000 Write/Erase Cycles

High endurance rating ensures reliable performance and longevity of the flash memory.

Technical Specifications

Flash Memory M25P40-VMN6PBA attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

50 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

8

No. of Words:

524288 words

No. of Words Code:

512K

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Serial Bus Type:

SPI

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

15 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M25P40-VMN6PBA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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