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M25P128-VMF6PB

Micron Technology

M25P128-VMF6PB by Micron Technology

M25P128-VMF6PB by Micron Technology is a 16MX8 NOR type flash memory with 134217728 bit density. It operates at 3V, has a clock frequency of 50 MHz, and offers 10000 write/erase cycles. Ideal for industrial applications requiring reliable data storage in compact devices.

Median Price

$0.062

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 981 parts In-Stock

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$0.062

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981

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Verical

USA . 981 parts In-Stock

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$0.062

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981

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$0.062

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Distributors (In-Stock)

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Digiode

USA . 1,492 parts In-Stock

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$0.059

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$0.059

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Mobius Materials

USA . 565 parts In-Stock

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$15.330

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$12.230

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565

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Vyrian

USA . 4,591 parts In-Stock

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Cyclops Electronics Ltd

UK . 1,336 parts In-Stock

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Chip Stock

USA . 1,125 parts In-Stock

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Nova Conductors

Japan . 800 parts In-Stock

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800

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Speed Components Ltd

Israel . 693 parts In-Stock

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Goldney Electronics S.L.

Spain . 219 parts In-Stock

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ComSIT Distribution GmbH

Germany . 177 parts In-Stock

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ComSIT USA

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A2Z Electronics, Inc.

USA . 51 parts In-Stock

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Bristol Electronics

USA . 51 parts In-Stock

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Diverse Electronics

Canada . 22 parts In-Stock

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NexGen Digital

USA . 20 parts In-Stock

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Sensible Micro Corp

USA . 2 parts In-Stock

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EMSNET

USA . 2 parts In-Stock

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Carlin Systems, Inc.

USA . 1 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 966 parts In-Stock

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$0.053

100+ parts

$0.052

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$0.051

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966

$0.053

$0.052

$0.051

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Ampacity Inc.

Singapore . 815 parts In-Stock

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$0.053

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815

$0.053

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Corphita

USA . 1,632 parts In-Stock

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$0.056

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1,632

$0.056

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Corohmni

South Africa . 777 parts In-Stock

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$2.728

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777

$2.728

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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$3.362

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$3.194

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$3.194

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2,000

$3.362

$3.194

$3.194

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Aztec Data Supply Inc.

USA . 2,726 parts In-Stock

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$5.748

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$5.748

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Andel Nordic

Denmark . 500 parts In-Stock

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$6.861

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$6.586

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$6.586

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$6.861

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$6.586

$6.586

Component Stockers USA

USA . 299 parts In-Stock

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$99.990

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RC Electronics

USA . 7,288 parts In-Stock

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$3.000

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$2.730

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$2.650

7,288

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$2.730

$2.650

Continental Prestige Electronics

USA . 6,800 parts In-Stock

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Authorized Procurement Solutions

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Perfect Parts

USA . 4,767 parts In-Stock

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Kepictronics

USA . 3,354 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Argo Parts USA

USA . 2,763 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,749 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,166 parts In-Stock

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Benley Electronics

USA . 644 parts In-Stock

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644

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GreenTree Electronics

Israel . 565 parts In-Stock

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565

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Infinite Electronics LLP (Excess)

. 104 parts In-Stock

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Bastille Electronics

Australia . 40 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 14 parts In-Stock

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Overview

Unlock the power of reliable and high-quality flash memory with Micron Technology's M25P128-VMF6PB. This versatile product boasts a wide range of applications, offering customers the value of fast and secure data storage solutions. With an industrial temperature grade and 10,000 write/erase cycles endurance, this NOR type memory IC is perfect for demanding environments where reliability is paramount. Trust in Micron Technology to deliver cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable plastic/epoxy material ensures the product is strong and long-lasting.

Nominal Supply Voltage: 3V

Optimal supply voltage for efficient performance.

Operating Mode: SYNCHRONOUS

Allows for synchronized operation, enhancing overall functionality.

Maximum Clock Frequency: 50 MHz

High clock frequency enables fast data transfer speeds.

Memory Density: 134217728 bit

High memory density provides ample storage capacity.

Endurance: 10000 Write/Erase Cycles

Withstand multiple write/erase cycles, ensuring longevity.

Serial Bus Type: SPI

Utilizes SPI interface for easy communication with other devices.

Technical Specifications

Flash Memory M25P128-VMF6PB attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

50 MHz

Minimum Data Retention Time:

20

Endurance:

10000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G16

Length:

10.3 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

16

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

7.5 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M25P128-VMF6PB Memory ICs trade compliance attributes, and parameters.

ECCN

3A991

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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