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M25P40-VMN6TPBA

Micron Technology

M25P40-VMN6TPBA by Micron Technology

Micron Technology's M25P40-VMN6TPBA is a NOR type Flash Memory with 512Kx8 organization, SPI serial bus type, and 50 MHz clock frequency. It is ideal for industrial applications requiring high endurance of 100k write/erase cycles, operating b/w -40 to 85°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 20,200 parts In-Stock

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20,200

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Inventory MP

USA . 5,000 parts In-Stock

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5,000

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Bristol Electronics

USA . 5,000 parts In-Stock

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5,000

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Digiode

USA . 2,030 parts In-Stock

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2,030

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Vyrian

USA . 1,455 parts In-Stock

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1,455

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Nova Conductors

Japan . 100 parts In-Stock

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100

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NexGen Digital

USA . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 817 parts In-Stock

1+ parts

$3.081

100+ parts

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817

$3.081

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Aztec Data Supply Inc.

USA . 1,927 parts In-Stock

1+ parts

$5.580

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1,927

$5.580

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$5.685

100+ parts

$5.400

1k+ parts

$5.400

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3,000

$5.685

$5.400

$5.400

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AZTECH Wire

Italy . 518 parts In-Stock

1+ parts

$9.730

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518

$9.730

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Semicontronic

India . 364 parts In-Stock

1+ parts

$13.000

100+ parts

$12.675

1k+ parts

$12.610

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364

$13.000

$12.675

$12.610

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Ampacity Inc.

Singapore . 181 parts In-Stock

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$30.000

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181

$30.000

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Component Stockers USA

USA . 264 parts In-Stock

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$99.990

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264

$99.990

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Authorized Procurement Solutions

USA . 21,164 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,352 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,901 parts In-Stock

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Argo Parts USA

USA . 3,003 parts In-Stock

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Kepictronics

USA . 1,618 parts In-Stock

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1,618

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Lucentia Tech

USA . 1,240 parts In-Stock

1+ parts

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$4.324

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$4.324

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$4.324

1,240

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$4.324

$4.324

$4.324

Continental Prestige Electronics

USA . 927 parts In-Stock

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927

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Robosynatics

Brazil . 620 parts In-Stock

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620

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Corphita

USA . 376 parts In-Stock

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376

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Bastille Electronics

Australia . 200 parts In-Stock

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200

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Modulus Dynamics

Lithuania . 200 parts In-Stock

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200

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S.R.D Solutions

India . 126 parts In-Stock

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126

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Overview

Unlock the power of cutting-edge technology with Micron Technology's M25P40-VMN6TPBA Flash Memory. Designed with precision and reliability in mind, this innovative product offers a wide range of applications in various industries. From enhancing the performance of electronic devices to optimizing data storage systems, the M25P40-VMN6TPBA delivers exceptional value, benefits, and advantages to customers. Experience superior quality, durability, and efficiency with Micron Technology's state-of-the-art Flash Memory solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for the package, ensuring the product is long-lasting and easy to handle.

Surface Mount: YES

Easily mountable on a circuit board, making it convenient for integration into electronic devices.

Maximum Operating Temperature: 85 °C

Can withstand high operating temperatures, suitable for industrial or harsh environments.

Organization: 512KX8

Efficient organization of memory cells, providing high functionality and storage capacity.

Write Protection: HARDWARE/SOFTWARE

Offers both hardware and software write protection options, enhancing data security and integrity.

Type: NOR TYPE

NOR flash memory type provides fast read speeds, making it suitable for applications requiring quick data access.

Endurance: 100000 Write/Erase Cycles

High endurance level ensures the product can handle frequent write and erase operations, increasing its longevity.

Serial Bus Type: SPI

Utilizes the Serial Peripheral Interface (SPI) for communication, offering a simple and efficient data transfer method.

Technical Specifications

Flash Memory M25P40-VMN6TPBA attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

50 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

8

No. of Words:

524288 words

No. of Words Code:

512K

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Serial Bus Type:

SPI

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

15 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M25P40-VMN6TPBA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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