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MT25QL512ABB8ESF-0AAT

Micron Technology

MT25QL512ABB8ESF-0AAT by Micron Technology

MT25QL512ABB8ESF-0AAT by Micron Technology is a 512M NOR flash memory with 133 MHz clock frequency. Operating at -40 to 105 °C, it has a supply voltage of 2.7-3.6 V and AEC-Q100 screening level for industrial applications like automotive electronics.

Median Price

$8.228

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 390 parts In-Stock

1+ parts

$4.500

100+ parts

$4.500

1k+ parts

$4.500

10k+ parts

-

390

$4.500

$4.500

$4.500

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Arrow

USA . 654 parts In-Stock

1+ parts

$8.228

100+ parts

-

1k+ parts

-

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654

$8.228

-

-

-

Farnell

UK . 585 parts In-Stock

1+ parts

$10.190

100+ parts

$7.150

1k+ parts

$7.050

10k+ parts

-

585

$10.190

$7.150

$7.050

-

Mouser Electronics

USA . 10,611 parts In-Stock

1+ parts

$15.400

100+ parts

-

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10,611

$15.400

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-

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Element14

Singapore . 31 parts In-Stock

1+ parts

$27.630

100+ parts

-

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31

$27.630

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-

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Verical

USA . 23,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$5.339

10k+ parts

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23,000

-

-

$5.339

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Future Electronics

Canada . 7,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$4.270

10k+ parts

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7,200

-

-

$4.270

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 168 parts In-Stock

1+ parts

$4.532

100+ parts

-

1k+ parts

-

10k+ parts

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168

$4.532

-

-

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Nova Conductors

Japan . 870 parts In-Stock

1+ parts

$9.300

100+ parts

-

1k+ parts

-

10k+ parts

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870

$9.300

-

-

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Bristol Electronics

USA . 35 parts In-Stock

1+ parts

$13.500

100+ parts

$8.438

1k+ parts

-

10k+ parts

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35

$13.500

$8.438

-

-

Vyrian

USA . 5,868 parts In-Stock

1+ parts

-

100+ parts

-

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5,868

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-

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IBS Electronics

USA . 4,320 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$92.425

10k+ parts

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4,320

-

-

$92.425

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Dynamic Solutions

Germany . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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4,000

-

-

-

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Component Sense

UK . 1,722 parts In-Stock

1+ parts

-

100+ parts

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1,722

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-

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Rebound Electronics

UK . 1,218 parts In-Stock

1+ parts

-

100+ parts

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1,218

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-

-

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NAC Semi

USA . 760 parts In-Stock

1+ parts

-

100+ parts

$8.480

1k+ parts

-

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760

-

$8.480

-

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Conversion2

USA . 191 parts In-Stock

1+ parts

-

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191

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Next Level Components, LLC

USA . 20 parts In-Stock

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20

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,614 parts In-Stock

1+ parts

$3.480

100+ parts

-

1k+ parts

-

10k+ parts

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4,614

$3.480

-

-

-

Corphita

USA . 1,402 parts In-Stock

1+ parts

$4.293

100+ parts

-

1k+ parts

-

10k+ parts

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1,402

$4.293

-

-

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Semicontronic

India . 6,142 parts In-Stock

1+ parts

$8.330

100+ parts

$8.122

1k+ parts

$8.080

10k+ parts

-

6,142

$8.330

$8.122

$8.080

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Continental Prestige Electronics

USA . 660 parts In-Stock

1+ parts

$8.970

100+ parts

$6.640

1k+ parts

-

10k+ parts

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660

$8.970

$6.640

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$9.300

100+ parts

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1,000

$9.300

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-

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Ampacity Inc.

Singapore . 6,178 parts In-Stock

1+ parts

$9.880

100+ parts

-

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6,178

$9.880

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-

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Corohmni

South Africa . 41 parts In-Stock

1+ parts

$10.140

100+ parts

-

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-

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41

$10.140

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-

-

Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$10.444

100+ parts

$9.922

1k+ parts

$9.922

10k+ parts

-

270

$10.444

$9.922

$9.922

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Speed Components Ltd (Excess)

Israel . 147,116 parts In-Stock

1+ parts

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147,116

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Kepictronics

USA . 12,045 parts In-Stock

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12,045

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-

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Argo Parts USA

USA . 684 parts In-Stock

1+ parts

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100+ parts

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684

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Overview

Unleash the power of Micron Technology with the MT25QL512ABB8ESF-0AAT Flash Memory. Designed for industrial-grade applications, this NOR type memory IC offers unparalleled reliability and performance. With a maximum clock frequency of 133 MHz and a minimum operating temperature of -40°C, this small outline package is perfect for high-demand environments. Trust in Micron's proven track record of quality and innovation to take your projects to the next level. Elevate your devices with the MT25QL512ABB8ESF-0AAT and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability in various operating environments.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for efficient and rapid data transfer, resulting in quicker access times.

Maximum Clock Frequency (fCLK): 133 MHz

With a high clock frequency, this flash memory product can support fast read/write operations, enhancing overall performance.

Temperature Grade: INDUSTRIAL

Designed to withstand industrial temperature ranges, making it suitable for rugged applications and harsh conditions.

Memory Density: 536870912 bit

High memory density provides ample storage capacity, making it ideal for storing large amounts of data efficiently.

Technical Specifications

Flash Memory MT25QL512ABB8ESF-0AAT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

133 MHz

JESD-30 Code:

R-PDSO-G16

Length:

10.3 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

16

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Screening Level:

AEC-Q100

Maximum Seated Height:

2.65 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

7.5 mm

Trade Compliance

MT25QL512ABB8ESF-0AAT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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