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MT25QL128ABA8E12-0SITTR

Micron Technology

MT25QL128ABA8E12-0SITTR by Micron Technology

Micron Technology's MT25QL128ABA8E12-0SITTR is a 16MX8 NOR flash memory with 133 MHz clock frequency, SPI serial bus type. It operates at -40 to 85 °C, has 100000 write/erase cycles endurance, and is ideal for applications requiring high-speed data storage.

Median Price

$2.187

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 366 parts In-Stock

1+ parts

$9.080

100+ parts

-

1k+ parts

-

10k+ parts

-

366

$9.080

-

-

-

Future Electronics

Canada . 12,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$1.600

12,500

-

-

-

$1.600

Verical

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$2.187

2,500

-

-

-

$2.187

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 197 parts In-Stock

1+ parts

$2.764

100+ parts

-

1k+ parts

-

10k+ parts

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197

$2.764

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-

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$3.695

100+ parts

-

1k+ parts

-

10k+ parts

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50

$3.695

-

-

-

Chip Stock

USA . 14,700 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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14,700

-

-

-

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Vyrian

USA . 4,561 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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4,561

-

-

-

-

IBS Electronics

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$35.063

2,500

-

-

-

$35.063

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,074 parts In-Stock

1+ parts

$2.619

100+ parts

-

1k+ parts

-

10k+ parts

-

2,074

$2.619

-

-

-

Continental Prestige Electronics

USA . 6,089 parts In-Stock

1+ parts

$3.695

100+ parts

-

1k+ parts

-

10k+ parts

$3.621

6,089

$3.695

-

-

$3.621

Argo Parts USA

USA . 4,888 parts In-Stock

1+ parts

$3.695

100+ parts

-

1k+ parts

-

10k+ parts

-

4,888

$3.695

-

-

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$3.695

100+ parts

-

1k+ parts

$3.510

10k+ parts

$3.436

2,000

$3.695

-

$3.510

$3.436

Ampacity Inc.

Singapore . 5,490 parts In-Stock

1+ parts

$4.050

100+ parts

-

1k+ parts

-

10k+ parts

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5,490

$4.050

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Infinite Electronics LLP (Excess)

. 4,736 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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4,736

-

-

-

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A-Z Elektronik GmbH

Germany . 2,500 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,500

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-

-

-

Overview

Experience reliable and high-quality flash memory solutions with the MT25QL128ABA8E12-0SITTR by Micron Technology. As a leading manufacturer in the industry, Micron Technology delivers top-of-the-line products designed for a wide range of applications. With its advanced technology and durable construction, this Flash Memory device offers exceptional value, benefits, and advantages to customers looking for efficient and dependable memory solutions. Upgrade your systems with the MT25QL128ABA8E12-0SITTR and unlock the full potential of your devices.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices.

Surface Mount:

YES - The surface mount design allows for easy and secure installation on PCBs, saving space and simplifying the assembly process.

Package Shape:

RECTANGULAR - The rectangular shape of the package provides a compact form factor, making it suitable for applications with limited space.

Operating Mode:

SYNCHRONOUS - The synchronous operating mode ensures precise and efficient data transfer, enhancing overall performance.

Nominal Supply Voltage (Vsup):

3V - The low nominal supply voltage of 3V helps in reducing power consumption, making it energy-efficient.

No. of Terminals:

24 - The 24 terminals offer versatile connectivity options, allowing for easy integration into various systems.

Package Style (Meter):

GRID ARRAY, THIN PROFILE - The grid array, thin profile package style provides high density mounting and efficient heat dissipation.

Maximum Operating Temperature:

85°C - The high maximum operating temperature tolerance makes it suitable for use in harsh environmental conditions.

Organization:

16MX8 - The 16MX8 organization allows for efficient organization and access of data, improving overall system performance.

Output Characteristics:

3-STATE - The 3-STATE output characteristics enable multiple device connections, enhancing flexibility in system design.

Minimum Operating Temperature:

40°C - The low minimum operating temperature ensures reliable performance even in extreme cold climates.

Terminal Position:

BOTTOM - The bottom terminal position simplifies the PCB layout and facilitates easy access during installation and maintenance.

Write Protection:

HARDWARE - The hardware write protection feature ensures data security and prevents accidental data loss, making it reliable for critical applications.

Maximum Seated Height:

1.2 mm - The low maximum seated height enables a slim profile design, suitable for thin devices and compact gadgets.

Maximum Clock Frequency (fCLK):

133 MHz - The high clock frequency allows for fast data transfer speed, enhancing overall system efficiency.

Width:

6 mm - The compact width dimension makes it suitable for space-constrained applications and miniaturized designs.

Minimum Supply Voltage (Vsup):

2.7 V - The low minimum supply voltage ensures flexibility in power supply options, making it compatible with a wide range of systems.

Type:

NOR TYPE - The NOR type flash memory offers fast random access and low power consumption, ideal for applications requiring high-speed data access.

Length:

8 mm - The short length dimension contributes to a compact form factor design, suitable for applications with limited space constraints.

Programming Voltage (V):

3V - The programming voltage of 3V ensures compatibility with standard programming interfaces and protocols, simplifying the integration process.

Technology:

CMOS - The CMOS technology offers low power consumption, fast switching speeds, and high noise immunity, making it ideal for battery-operated devices.

Parallel or Serial:

SERIAL - The serial interface enables easy integration with microcontrollers and other serial devices, simplifying data transfer and communication.

Terminal Form:

BALL - The ball terminal form provides reliable contact and soldering connections, ensuring stable and secure operation in demanding environments.

Maximum Supply Current:

35 mA - The low maximum supply current requirement helps in reducing power consumption and heat dissipation, contributing to energy efficiency.

No. of Words:

16,777,216 words - The large number of words capacity offers ample storage for data-intensive applications, making it suitable for high-performance computing tasks.

Memory Width:

8 - The 8 memory width configuration allows for efficient data transfer and processing, enhancing overall system speed and responsiveness.

Minimum Data Retention Time:

20 - The minimum data retention time of 20 years ensures long-term data integrity and reliability, making it suitable for archival and mission-critical applications.

Terminal Pitch:

1 mm - The small terminal pitch allows for high-density mounting, enabling compact PCB designs and efficient space utilization.

No. of Words Code:

16M - The 16M words code simplifies memory addressing and access, enhancing ease of use and system compatibility.

Maximum Supply Voltage (Vsup):

3.6 V - The high maximum supply voltage tolerance provides flexibility in power supply options and ensures robust performance in varying voltage conditions.

Endurance:

100,000 Write/Erase Cycles - The high endurance level of 100,000 write/erase cycles ensures durability and longevity, making it suitable for frequent data read/write operations.

Serial Bus Type:

SPI - The SPI serial bus type offers high data transfer rates and simple interface protocols, facilitating easy communication with other SPI-compatible devices.

Memory Density:

134,217,728 bit - The high memory density provides ample storage capacity for large volumes of data, making it suitable for data-intensive applications and multimedia content.

Memory IC Type:

FLASH - The flash memory type offers fast read/write speeds, non-volatile storage, and high reliability, making it ideal for storing program codes, data logs, and multimedia files.

Maximum Standby Current:

0.00005 Amp - The low standby current consumption minimizes power wastage during idle periods, contributing to energy efficiency and prolonged battery life.

Technical Specifications

Flash Memory MT25QL128ABA8E12-0SITTR attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

133 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PBGA-B24

Length:

8 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA24,5X5,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Programming Voltage (V):

3

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00005 Amp

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Type:

NOR TYPE

Width:

6 mm

Write Protection:

HARDWARE

Trade Compliance

MT25QL128ABA8E12-0SITTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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