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IS25LQ040B-JNLE

Integrated Silicon Solution

IS25LQ040B-JNLE by Integrated Silicon Solution

IS25LQ040B-JNLE by Integrated Silicon Solution is a 4Mx1 Flash Memory with 104MHz clock frequency, operating at -40 to 105°C. It has a supply voltage range of 2.3V to 3.6V and is ideal for industrial applications requiring high-speed synchronous operation in a small outline package.

Median Price

$0.389

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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Nova Conductors

Japan . 52 parts In-Stock

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USA . 103,270 parts In-Stock

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ACDS - Activité Composants Distribution Service

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NexGen Digital

USA . 12,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 11,021 parts In-Stock

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Vyrian

USA . 551 parts In-Stock

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ComSIT Distribution GmbH

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ComSIT USA

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Contempo Components LLC

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Semi Source

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Inventory MP

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Bristol Electronics

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Argo Parts USA

USA . 3,931 parts In-Stock

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$0.377

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Continental Prestige Electronics

USA . 1,345 parts In-Stock

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Corohmni

South Africa . 476 parts In-Stock

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$3.866

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Aztec Data Supply Inc.

USA . 3,707 parts In-Stock

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AZTECH Wire

Italy . 862 parts In-Stock

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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RC Electronics

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Lixinc

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Speed Components Ltd (Excess)

Israel . 3,288 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,812 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,208 parts In-Stock

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XScomponents

USA . 1,030 parts In-Stock

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Kepictronics

USA . 65 parts In-Stock

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Infinite Electronics LLP (Excess)

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Overview

Unlock the power of fast and reliable data storage with the IS25LQ040B-JNLE by Integrated Silicon Solution. With a focus on quality and innovation, ISS delivers cutting-edge flash memory solutions perfect for a wide range of applications. This compact, synchronous flash memory boasts a small outline package, making it ideal for industrial use. Offering a nominal supply voltage of 3V and a maximum clock frequency of 104 MHz, this versatile memory chip provides high performance while ensuring data integrity. Trust ISS to provide superior technology that meets your storage needs with ease.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory, making it suitable for various applications.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer and more efficient use of the flash memory.

Maximum Clock Frequency (fCLK): 104 MHz

The high clock frequency enables quick data access and processing, enhancing the overall performance of the flash memory.

Technology: CMOS

CMOS technology ensures low power consumption and high reliability, making the flash memory energy-efficient and dependable.

Memory Density: 4194304 bit

The high memory density allows for storing a large amount of data in a small form factor, providing ample storage capacity.

Technical Specifications

Flash Memory IS25LQ040B-JNLE attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Maximum Clock Frequency (fCLK):

104 MHz

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

IS25LQ040B-JNLE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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