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M25P128-VME6GB

Micron Technology

M25P128-VME6GB by Micron Technology

Micron Technology's M25P128-VME6GB is a 16MX8 NOR flash memory with 134217728 bit density. Operating at 3V, it offers 10000 write/erase cycles and SPI serial bus interface. Ideal for industrial applications requiring high endurance and reliable data storage in compact form factor.

Median Price

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Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

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Vyrian

USA . 4,814 parts In-Stock

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Digiode

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Chip Stock

USA . 662 parts In-Stock

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Sternenhof Electronics

Switzerland . 128 parts In-Stock

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Semtec, LLC

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Nova Conductors

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Bristol Electronics

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Atlantic Semiconductor

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SPM Sales

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NAC Semi

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ComSIT Distribution GmbH

Germany . 12 parts In-Stock

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ComSIT USA

USA . 12 parts In-Stock

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NexGen Digital

USA . 9 parts In-Stock

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Connect4Technologies Inc.

Canada . 8 parts In-Stock

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Sunrise Surplus Inc.

USA . 7 parts In-Stock

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Connector Distribution Corp

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Right Parts Inc.

USA . 4 parts In-Stock

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EMSNET

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Aztec Data Supply Inc.

USA . 595 parts In-Stock

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$2.156

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595

$2.156

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Ampacity Inc.

Singapore . 383 parts In-Stock

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$4.000

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Corohmni

South Africa . 382 parts In-Stock

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$4.180

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AZTECH Wire

Italy . 654 parts In-Stock

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$11.529

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Semicontronic

India . 1,331 parts In-Stock

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$20.000

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$19.500

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$19.400

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Component Stockers USA

USA . 492 parts In-Stock

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$99.990

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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Continental Prestige Electronics

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A-Z Elektronik GmbH

Germany . 4,968 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,312 parts In-Stock

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Perfect Parts

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GreenTree Electronics

Israel . 1,834 parts In-Stock

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Argo Parts USA

USA . 1,765 parts In-Stock

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RC Electronics

USA . 1,761 parts In-Stock

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$10.610

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$9.690

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$9.390

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$9.390

Advanced Electronics

New Zealand . 1,740 parts In-Stock

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Corphita

USA . 1,092 parts In-Stock

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Kepictronics

USA . 517 parts In-Stock

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Microchip USA

USA . 447 parts In-Stock

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Modulus Dynamics

Lithuania . 16 parts In-Stock

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Bastille Electronics

Australia . 15 parts In-Stock

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iodParts Technologies Inc.

India . 12 parts In-Stock

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Overview

Elevate your storage game with the M25P128-VME6GB by Micron Technology. Designed for high performance, this Flash Memory device offers unparalleled reliability and endurance for a wide range of applications. With its innovative technology and industrial-grade construction, this product ensures optimal data retention and seamless operation in any environment. Stay ahead of the curve and experience the value and benefits that Micron Technology brings to the table with the M25P128-VME6GB. Unlock new possibilities and elevate your storage solutions today.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Durable material ensures product longevity and reliability.

Surface Mount:

YES - Easy installation and space-saving design.

No. of Functions:

1 - Simplifies operation and enhances user experience.

Package Shape:

RECTANGULAR - Space-efficient design for compact installations.

Operating Mode:

SYNCHRONOUS - Ensures efficient and synchronized data transfer.

Nominal Supply Voltage / Vsup (V):

3 - Compatible with many devices and power sources.

Power Supplies (V):

3/3.3 - Versatile voltage options for flexible usage.

No. of Terminals:

8 - Simplifies connectivity and integration.

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE - Optimal heat dissipation and space-saving design for efficiency.

Maximum Operating Temperature:

85 °C - Suitable for various environmental conditions.

Organization:

16MX8 - Efficient memory organization for quick access and data management.

Minimum Operating Temperature:

40 °C - Reliable performance in extreme temperatures.

Terminal Position:

DUAL - Versatile terminal positioning for easy installation.

Write Protection:

HARDWARE/SOFTWARE - Enhanced data security measures for protecting valuable information.

Maximum Seated Height:

1 mm - Low profile design for easy integration in compact spaces.

Maximum Clock Frequency (fCLK):

50 MHz - High-speed performance for quick data transfer.

Width:

6 mm - Slim design for space-efficient installations.

Minimum Supply Voltage (Vsup):

2.7 V - Low power consumption for energy efficiency.

Maximum Time At Peak Reflow Temperature (s):

30 - Resistant to high temperatures for reliable performance.

Peak Reflow Temperature °C:

260 - High-temperature tolerance for durability.

Type:

NOR TYPE - Reliable memory type for efficient data storage and retrieval.

Length:

8 mm - Compact size for versatile installation options.

Programming Voltage (V):

2.7 - Easy programming process for user convenience.

Temperature Grade:

INDUSTRIAL - Suitable for industrial environments with varying conditions.

Technology:

CMOS - Efficient technology for reliable performance.

Parallel or Serial:

SERIAL - Serial design for streamlined data transfer.

Terminal Form:

NO LEAD - Lead-free design for eco-friendly use.

Maximum Supply Current:

20 mA - Low power consumption for energy efficiency.

No. of Words:

16777216 words - High capacity for storing a large amount of data.

Memory Width:

8 - Wide memory width for enhanced data handling.

Minimum Data Retention Time:

20 - Long data retention time for preserving important information.

Terminal Pitch:

1.27 mm - Versatile terminal pitch for easy connectivity.

No. of Words Code:

16M - Efficient coding system for quick data identification.

Maximum Supply Voltage (Vsup):

3.6 V - Compatible with various power sources for flexible usage.

Endurance:

10000 Write/Erase Cycles - Durable memory with high endurance for long-term use.

Serial Bus Type:

SPI - Efficient serial bus type for streamlined data transfer.

Memory Density:

134217728 bit - High memory density for storing large amounts of data.

Memory IC Type:

FLASH - Reliable memory IC type for efficient data storage and retrieval.

Maximum Standby Current:

0.0001 Amp - Low standby current for energy efficiency.

Technical Specifications

Flash Memory M25P128-VME6GB attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

50 MHz

Minimum Data Retention Time:

20

Endurance:

10000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-N8

Length:

8 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

6 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M25P128-VME6GB Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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