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MT25QU128ABA1EW9-0SIT

Micron Technology

MT25QU128ABA1EW9-0SIT by Micron Technology

Micron Technology's MT25QU128ABA1EW9-0SIT is a 128MX1 NOR flash memory with 134217728-bit density. Operating at 166 MHz, it has a supply voltage range of 1.7V to 2V and supports industrial temperature grade applications. With a compact package style and serial interface, it is suitable for various embedded systems requiring high-speed data storage.

Median Price

$5.035

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 216 parts In-Stock

1+ parts

$1.884

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-

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216

$1.884

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Farnell

UK . 7,725 parts In-Stock

1+ parts

$4.470

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-

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7,725

$4.470

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DigiKey

USA . 1,394 parts In-Stock

1+ parts

$5.600

100+ parts

$4.830

1k+ parts

$4.559

10k+ parts

$4.339

1,394

$5.600

$4.830

$4.559

$4.339

Mouser Electronics

USA . 556 parts In-Stock

1+ parts

$5.930

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-

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556

$5.930

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Newark

USA . 210 parts In-Stock

1+ parts

$6.720

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210

$6.720

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Element14

Singapore . 10,243 parts In-Stock

1+ parts

$8.230

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10,243

$8.230

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Verical

USA . 80,000 parts In-Stock

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$1.776

80,000

-

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-

$1.776

Future Electronics

Canada . 5,760 parts In-Stock

1+ parts

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100+ parts

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$1.350

10k+ parts

$1.330

5,760

-

-

$1.350

$1.330

Avnet

USA . 1,920 parts In-Stock

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1,920

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Distributors (In-Stock)

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Digiode

USA . 476 parts In-Stock

1+ parts

$1.577

100+ parts

-

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476

$1.577

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Nova Conductors

Japan . 550 parts In-Stock

1+ parts

$3.720

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550

$3.720

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Chip Stock

USA . 43,750 parts In-Stock

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43,750

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Cyclops Electronics Ltd

UK . 12,311 parts In-Stock

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NAC Semi

USA . 11,520 parts In-Stock

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$4.010

11,520

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$4.010

Vyrian

USA . 6,274 parts In-Stock

1+ parts

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6,274

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Dynamic Solutions

Germany . 4,000 parts In-Stock

1+ parts

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4,000

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Bristol Electronics

USA . 300 parts In-Stock

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300

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Atlantic Semiconductor

USA . 300 parts In-Stock

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300

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Distributors (Availability)

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Semicontronic

India . 15,119 parts In-Stock

1+ parts

$1.410

100+ parts

$1.375

1k+ parts

$1.368

10k+ parts

-

15,119

$1.410

$1.375

$1.368

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Ampacity Inc.

Singapore . 14,759 parts In-Stock

1+ parts

$1.410

100+ parts

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14,759

$1.410

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Corphita

USA . 818 parts In-Stock

1+ parts

$1.494

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818

$1.494

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Aztec Data Supply Inc.

USA . 2,431 parts In-Stock

1+ parts

$2.840

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2,431

$2.840

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Continental Prestige Electronics

USA . 10,642 parts In-Stock

1+ parts

$3.470

100+ parts

$2.750

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10,642

$3.470

$2.750

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Argo Parts USA

USA . 1,681 parts In-Stock

1+ parts

$3.720

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1,681

$3.720

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Corohmni

South Africa . 263 parts In-Stock

1+ parts

$3.863

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263

$3.863

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Advanced Electronics

New Zealand . 60 parts In-Stock

1+ parts

$3.979

100+ parts

$3.780

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$3.780

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60

$3.979

$3.780

$3.780

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Futuretech Components

Singapore . 13,742 parts In-Stock

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13,742

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RC Electronics

USA . 6,014 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,865 parts In-Stock

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Perfect Parts

USA . 4,581 parts In-Stock

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GreenTree Electronics

Israel . 2,478 parts In-Stock

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2,478

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

$3.646

1k+ parts

$3.534

10k+ parts

$3.460

2,000

-

$3.646

$3.534

$3.460

Kepictronics

USA . 2,000 parts In-Stock

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Authorized Procurement Solutions

USA . 99 parts In-Stock

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99

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Overview

Unlock the power of reliable and high-performance flash memory with the MT25QU128ABA1EW9-0SIT by Micron Technology. Manufactured with precision and expertise, this flash memory device offers seamless synchronous operation and a wide operating temperature range, making it ideal for industrial applications. With a compact package style and low power consumption, this flash memory provides exceptional value and benefits to customers looking for efficient and dependable memory solutions. Trust Micron Technology to deliver top-quality products that exceed expectations in performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material combination allows for a lightweight yet durable package, making it suitable for portable devices.

Surface Mount: YES

Surface mounting makes the installation of this flash memory easy and efficient on circuit boards.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise data transfer and synchronization, leading to reliable performance.

Nominal Supply Voltage / Vsup (V): 1.8

The low nominal supply voltage of 1.8V helps in reducing power consumption, making it energy-efficient.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this flash memory can function reliably even in harsh industrial environments.

Organization: 128MX1

The organization of 128MX1 allows for efficient data storage and retrieval, enhancing the overall performance of the product.

Width: 6 mm

The compact width of 6mm makes this flash memory suitable for applications where space is limited.

Technology: CMOS

Being based on CMOS technology ensures low power consumption and high noise immunity, contributing to the efficiency and reliability of the product.

Memory Density: 134217728 bit

With a high memory density of 134217728 bits, this flash memory can store a large amount of data, making it ideal for use in data-intensive applications.

Memory IC Type: FLASH

Being a flash memory IC type ensures fast data access speeds and non-volatile storage, making it a reliable choice for various applications.

Technical Specifications

Flash Memory MT25QU128ABA1EW9-0SIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

166 MHz

JESD-30 Code:

R-PDSO-N8

Length:

8 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

1.8

Maximum Seated Height:

.8 mm

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

6 mm

Trade Compliance

MT25QU128ABA1EW9-0SIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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