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MT28FW02GBBA1HPC-0AAT

Micron Technology

MT28FW02GBBA1HPC-0AAT by Micron Technology

MT28FW02GBBA1HPC-0AAT by Micron Technology is a 128MX16 flash memory with 134217728 words and 2147483648 bit memory density. Operating at -40 to 105 °C, it has a supply voltage range of 2.7V to 3.6V, making it ideal for industrial applications requiring high-speed data storage and retrieval in harsh environments.

Median Price

$102.085

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 11 parts In-Stock

1+ parts

$47.300

100+ parts

-

1k+ parts

-

10k+ parts

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11

$47.300

-

-

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Farnell

UK . 141 parts In-Stock

1+ parts

$88.040

100+ parts

-

1k+ parts

-

10k+ parts

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141

$88.040

-

-

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Mouser Electronics

USA . 1,611 parts In-Stock

1+ parts

$116.130

100+ parts

$108.740

1k+ parts

-

10k+ parts

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1,611

$116.130

$108.740

-

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Newark

USA . 387 parts In-Stock

1+ parts

$124.020

100+ parts

-

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387

$124.020

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Element14

Singapore . 141 parts In-Stock

1+ parts

$173.740

100+ parts

-

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141

$173.740

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Verical

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$32.540

10k+ parts

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6,000

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-

$32.540

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Avnet

USA . 2,208 parts In-Stock

1+ parts

-

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2,208

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WPG Americas

USA . 618 parts In-Stock

1+ parts

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618

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 127 parts In-Stock

1+ parts

$23.722

100+ parts

-

1k+ parts

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10k+ parts

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127

$23.722

-

-

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Nova Conductors

Japan . 870 parts In-Stock

1+ parts

$39.940

100+ parts

-

1k+ parts

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10k+ parts

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870

$39.940

-

-

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Chip Stock

USA . 3,500 parts In-Stock

1+ parts

-

100+ parts

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3,500

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NAC Semi

USA . 3,079 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$45.160

3,079

-

-

-

$45.160

Vyrian

USA . 219 parts In-Stock

1+ parts

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219

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 3,013 parts In-Stock

1+ parts

$2.440

100+ parts

-

1k+ parts

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10k+ parts

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3,013

$2.440

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Corohmni

South Africa . 142 parts In-Stock

1+ parts

$3.095

100+ parts

-

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142

$3.095

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Corphita

USA . 349 parts In-Stock

1+ parts

$22.473

100+ parts

-

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349

$22.473

-

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Continental Prestige Electronics

USA . 958 parts In-Stock

1+ parts

$26.010

100+ parts

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958

$26.010

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Ampacity Inc.

Singapore . 408 parts In-Stock

1+ parts

$30.470

100+ parts

-

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408

$30.470

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$39.141

100+ parts

-

1k+ parts

$37.576

10k+ parts

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2,000

$39.141

-

$37.576

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Perfect Parts

USA . 100,916 parts In-Stock

1+ parts

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100,916

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

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A-Z Elektronik GmbH

Germany . 5,763 parts In-Stock

1+ parts

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5,763

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Argo Parts USA

USA . 2,230 parts In-Stock

1+ parts

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100+ parts

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2,230

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Speed Components Ltd (Excess)

Israel . 1,076 parts In-Stock

1+ parts

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100+ parts

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1,076

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Futuretech Components

Singapore . 800 parts In-Stock

1+ parts

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100+ parts

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800

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RC Electronics

USA . 516 parts In-Stock

1+ parts

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516

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Overview

Elevate your tech devices with the cutting-edge MT28FW02GBBA1HPC-0AAT Flash Memory from Micron Technology. With a focus on quality and reliability, Micron is a trusted name in the industry. This flash memory offers lightning-fast performance and ample storage capacity for a seamless user experience. Whether you're upgrading your smartphone, tablet, or IoT device, this product delivers unmatched value and efficiency. Say goodbye to lagging devices and hello to a smoother, more efficient operation with Micron's innovative flash memory technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the package lightweight and durable, suitable for various applications.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving time and effort during assembly.

Screening Level: AEC-Q100

Ensures high reliability and quality standards, making it ideal for automotive and industrial use.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of space and easy integration into existing designs.

Operating Mode: ASYNCHRONOUS

Offers flexibility and fast data access, making it suitable for high-speed applications.

Nominal Supply Voltage / Vsup (V): 3

Works efficiently within a standard voltage range, ensuring compatibility with most systems.

No. of Terminals: 64

Provides ample connectivity options for interfacing with other components and peripherals.

Package Style (Meter): GRID ARRAY, LOW PROFILE

The low profile design saves space and improves airflow in compact systems.

Maximum Operating Temperature: 105 °C

Can withstand high temperatures, suitable for demanding operating environments.

Organization: 128MX16

Organized in a 128 megabit x 16-bit configuration, offering high memory capacity and data handling capabilities.

Minimum Operating Temperature: -40 °C

Functions reliably even in extreme cold conditions, ideal for harsh environments.

Terminal Position: BOTTOM

Allows for easy access and soldering of terminals, simplifying assembly processes.

Maximum Seated Height: 1.4 mm

The low seated height saves space and enables a compact design in devices.

Width: 11 mm

Compact width allows for efficient use of PCB real estate, important in crowded layouts.

Minimum Supply Voltage (Vsup): 2.7 V

Operates at a low power supply voltage, suitable for battery-powered applications.

Length: 13 mm

Compact length enables space-saving installation in tight spaces or small devices.

Programming Voltage (V): 3

The programming voltage of 3 volts ensures compatibility with standard programming interfaces.

Temperature Grade: INDUSTRIAL

Designed to withstand harsh industrial environments, ensuring reliability under tough conditions.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high-speed operation, ideal for energy-efficient devices.

Parallel or Serial: PARALLEL

Offers parallel access for fast data retrieval and transfer speeds, suitable for high-performance applications.

Terminal Form: BALL

Ball terminals provide secure connections and enable reliable data transmission between components.

No. of Words: 134217728 words

Offers a large memory word capacity, suitable for storing and managing extensive data sets.

Memory Width: 16

The 16-bit memory width allows for efficient data processing and retrieval, enhancing system performance.

Terminal Pitch: 1 mm

The 1mm terminal pitch enables precise and secure mounting on PCBs, ensuring reliable connections.

No. of Words Code: 128M

The 128 million words code provides ample storage capacity for a wide range of data-intensive applications.

Maximum Supply Voltage (Vsup): 3.6 V

Can safely handle higher supply voltages, offering flexibility in power source compatibility.

Memory Density: 2147483648 bit

High memory density allows for storing large amounts of data in a compact form factor, suitable for data-intensive applications.

Memory IC Type: FLASH

Utilizes flash memory technology for fast data access and retention, ideal for applications requiring non-volatile storage.

Maximum Access Time: 105 ns

Provides fast data access times, ensuring quick response and high performance in data-critical applications.

Technical Specifications

Flash Memory MT28FW02GBBA1HPC-0AAT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

105 ns

JESD-30 Code:

R-PBGA-B64

Length:

13 mm

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

64

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

3

Screening Level:

AEC-Q100

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

11 mm

Trade Compliance

MT28FW02GBBA1HPC-0AAT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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