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MT28EW256ABA1HJS-0SIT

Micron Technology

MT28EW256ABA1HJS-0SIT by Micron Technology

Micron Technology's MT28EW256ABA1HJS-0SIT is a 16Mx16 NOR flash memory with 268MB density. Operating at 3V, it offers fast access time of 70ns and industrial temperature grade suitability. With parallel interface and 56 terminals in a small outline package, it finds application in high-performance embedded systems.

Median Price

$9.025

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 309 parts In-Stock

1+ parts

$6.880

100+ parts

$4.910

1k+ parts

$4.590

10k+ parts

-

309

$6.880

$4.910

$4.590

-

Arrow

USA . 292 parts In-Stock

1+ parts

$8.493

100+ parts

$6.846

1k+ parts

$6.637

10k+ parts

-

292

$8.493

$6.846

$6.637

-

Element14

Singapore . 1,090 parts In-Stock

1+ parts

$9.025

100+ parts

$7.357

1k+ parts

-

10k+ parts

-

1,090

$9.025

$7.357

-

-

Mouser Electronics

USA . 589 parts In-Stock

1+ parts

$17.800

100+ parts

-

1k+ parts

-

10k+ parts

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589

$17.800

-

-

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Newark

USA . 576 parts In-Stock

1+ parts

$20.870

100+ parts

-

1k+ parts

-

10k+ parts

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576

$20.870

-

-

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Avnet

USA . 5,184 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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5,184

-

-

-

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Future Electronics

Canada . 2,880 parts In-Stock

1+ parts

-

100+ parts

$4.750

1k+ parts

$4.600

10k+ parts

-

2,880

-

$4.750

$4.600

-

EBV Elektronik

Germany . 1,728 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,728

-

-

-

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Verical

USA . 25 parts In-Stock

1+ parts

-

100+ parts

$11.784

1k+ parts

-

10k+ parts

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25

-

$11.784

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,335 parts In-Stock

1+ parts

$6.536

100+ parts

-

1k+ parts

-

10k+ parts

-

2,335

$6.536

-

-

-

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$7.020

100+ parts

-

1k+ parts

-

10k+ parts

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150

$7.020

-

-

-

Chip Stock

USA . 8,740 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

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8,740

-

-

-

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Dynamic Solutions

Germany . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,000

-

-

-

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NAC Semi

USA . 3,830 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$9.150

10k+ parts

$8.470

3,830

-

-

$9.150

$8.470

Cyclops Electronics Ltd

UK . 1,728 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,728

-

-

-

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Vyrian

USA . 609 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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609

-

-

-

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IBS Electronics

USA . 576 parts In-Stock

1+ parts

-

100+ parts

$99.858

1k+ parts

-

10k+ parts

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576

-

$99.858

-

-

BCID Electronics Ltd.

Israel . 10 parts In-Stock

1+ parts

-

100+ parts

-

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-

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10

-

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 500 parts In-Stock

1+ parts

$2.570

100+ parts

-

1k+ parts

-

10k+ parts

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500

$2.570

-

-

-

Corphita

USA . 1,278 parts In-Stock

1+ parts

$6.192

100+ parts

-

1k+ parts

-

10k+ parts

-

1,278

$6.192

-

-

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Continental Prestige Electronics

USA . 219 parts In-Stock

1+ parts

$7.750

100+ parts

$5.790

1k+ parts

-

10k+ parts

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219

$7.750

$5.790

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QUARKTWIN TECHNOLOGY LTD

USA . 24,550 parts In-Stock

1+ parts

-

100+ parts

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24,550

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-

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RC Electronics

USA . 9,806 parts In-Stock

1+ parts

-

100+ parts

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9,806

-

-

-

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A-Z Elektronik GmbH

Germany . 5,133 parts In-Stock

1+ parts

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5,133

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-

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Argo Parts USA

USA . 3,432 parts In-Stock

1+ parts

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3,432

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-

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Microchip USA

USA . 2,335 parts In-Stock

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2,335

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Authorized Procurement Solutions

USA . 1,025 parts In-Stock

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1,025

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-

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$6.880

1k+ parts

$6.669

10k+ parts

$6.529

1,000

-

$6.880

$6.669

$6.529

Metaverse IC Inc.

Canada . 800 parts In-Stock

1+ parts

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800

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-

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Glotronic Ltd.

UK . 183 parts In-Stock

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183

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Overview

Unlock the power of reliable and high-quality flash memory with the MT28EW256ABA1HJS-0SIT by Micron Technology. Designed with precision and expertise, this product offers unparalleled performance and durability for a wide range of applications. From industrial to consumer electronics, this flash memory provides fast access times and efficient data storage, making it an essential component for your project. Trust in Micron's reputation for excellence and choose the MT28EW256ABA1HJS-0SIT for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and protection for the flash memory, making it suitable for various environments.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent read and write operations, offering flexibility and efficiency in data handling.

Nominal Supply Voltage / Vsup (V): 3

A nominal supply voltage of 3V ensures compatibility with a wide range of devices and systems.

Technology: CMOS

CMOS technology offers low power consumption and high speed performance, making the flash memory efficient and reliable.

Memory IC Type: FLASH

Being a flash memory IC type, this product provides non-volatile storage capability, allowing data to be retained even when power is removed.

Technical Specifications

Flash Memory MT28EW256ABA1HJS-0SIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

70 ns

Alternate Memory Width:

8

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

56

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

MT28EW256ABA1HJS-0SIT Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.1.A

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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