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MT28EW128ABA1LPC-0SITTR

Micron Technology

MT28EW128ABA1LPC-0SITTR by Micron Technology

Micron Technology's MT28EW128ABA1LPC-0SITTR is a NOR flash memory with 8Mx16 organization, 2K sectors, and 64K sector size. Operating at -40 to 85°C, it offers 100000 write/erase cycles and has a standby current of 0.00012A. Ideal for industrial applications requiring fast access times and high endurance.

Median Price

$5.670

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,628 parts In-Stock

1+ parts

$7.240

100+ parts

$6.220

1k+ parts

$5.080

10k+ parts

$4.860

1,628

$7.240

$6.220

$5.080

$4.860

Future Electronics

Canada . 4,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$4.100

4,800

-

-

-

$4.100

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 715 parts In-Stock

1+ parts

$7.400

100+ parts

-

1k+ parts

-

10k+ parts

-

715

$7.400

-

-

-

Chip Stock

USA . 22,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

22,200

-

-

-

-

IBS Electronics

USA . 4,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$5.330

4,800

-

-

-

$5.330

NAC Semi

USA . 1,663 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$7.540

1,663

-

-

-

$7.540

Vyrian

USA . 1,238 parts In-Stock

1+ parts

-

100+ parts

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1,238

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-

-

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Nova Conductors

Japan . 72 parts In-Stock

1+ parts

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72

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 31 parts In-Stock

1+ parts

$4.344

100+ parts

-

1k+ parts

-

10k+ parts

-

31

$4.344

-

-

-

Ampacity Inc.

Singapore . 1,583 parts In-Stock

1+ parts

$6.620

100+ parts

-

1k+ parts

-

10k+ parts

-

1,583

$6.620

-

-

-

Corphita

USA . 2,458 parts In-Stock

1+ parts

$7.011

100+ parts

-

1k+ parts

-

10k+ parts

-

2,458

$7.011

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 13,620 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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13,620

-

-

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Perfect Parts

USA . 8,960 parts In-Stock

1+ parts

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8,960

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-

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Argo Parts USA

USA . 3,114 parts In-Stock

1+ parts

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100+ parts

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3,114

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-

-

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Continental Prestige Electronics

USA . 2,108 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,108

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-

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-

GreenTree Electronics

Israel . 1,600 parts In-Stock

1+ parts

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100+ parts

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1,600

-

-

-

-

Aranea Global

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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100

-

-

-

-

Overview

Unleash the power of reliable and high-quality flash memory with the MT28EW128ABA1LPC-0SITTR by Micron Technology. Designed for industrial applications, this versatile memory chip offers 8MX16 organization, 2K sectors, and 64K sector size, making it ideal for a wide range of uses. With a durable plastic package, low profile grid array style, and top-of-the-line CMOS technology, this product delivers exceptional performance and endurance with 100,000 write/erase cycles. Trust Micron Technology to provide cutting-edge solutions that meet your memory needs seamlessly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for portable devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent processes to occur simultaneously, enhancing overall performance and efficiency.

Nominal Supply Voltage / Vsup (V): 3

Stable supply voltage of 3V ensures consistent and reliable memory storage and retrieval.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures the product can withstand harsh environmental conditions, making it suitable for a wide range of applications.

Endurance: 100,000 Write/Erase Cycles

High endurance rating ensures the memory can withstand frequent read/write operations, extending the lifespan of the product.

Technical Specifications

Flash Memory MT28EW128ABA1LPC-0SITTR attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

70 ns

Alternate Memory Width:

8

Command User Interface:

NO

Common Flash Interface:

YES

Data Polling:

YES

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PBGA-B64

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

2K

No. of Terminals:

64

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Page Size (words):

16

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Ready or Busy:

YES

Maximum Seated Height:

1.4 mm

Sector Size (Words):

64K

Maximum Standby Current:

.00012 Amp

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

YES

Type:

NOR TYPE

Width:

11 mm

Trade Compliance

MT28EW128ABA1LPC-0SITTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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