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MT29F1G08ABAEAWP-IT:E

Micron Technology

MT29F1G08ABAEAWP-IT:E by Micron Technology

Micron Technology's MT29F1G08ABAEAWP-IT:E is a 3.3V SLC NAND Flash Memory with 128Mx8 organization, operating from -40 to 85°C. It features a small outline package, parallel interface, and industrial temperature grade suitable for various embedded applications.

Median Price

$2.691

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 711 parts In-Stock

1+ parts

$2.070

100+ parts

$1.700

1k+ parts

$1.600

10k+ parts

-

711

$2.070

$1.700

$1.600

-

Mouser Electronics

USA . 3,098 parts In-Stock

1+ parts

$2.620

100+ parts

$2.270

1k+ parts

$2.090

10k+ parts

-

3,098

$2.620

$2.270

$2.090

-

Arrow

USA . 2,493 parts In-Stock

1+ parts

$2.876

100+ parts

-

1k+ parts

-

10k+ parts

-

2,493

$2.876

-

-

-

DigiKey

USA . 12 parts In-Stock

1+ parts

$5.310

100+ parts

-

1k+ parts

-

10k+ parts

-

12

$5.310

-

-

-

Newark

USA . 904 parts In-Stock

1+ parts

$7.840

100+ parts

-

1k+ parts

-

10k+ parts

-

904

$7.840

-

-

-

EBV Elektronik

Germany . 8,640 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,640

-

-

-

-

Future Electronics

Canada . 5,568 parts In-Stock

1+ parts

-

100+ parts

$1.450

1k+ parts

$1.430

10k+ parts

$1.390

5,568

-

$1.450

$1.430

$1.390

Verical

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.691

10k+ parts

-

1,000

-

-

$2.691

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,408 parts In-Stock

1+ parts

$1.482

100+ parts

-

1k+ parts

-

10k+ parts

-

2,408

$1.482

-

-

-

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$2.520

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$2.520

-

-

-

NAC Semi

USA . 9,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.910

10k+ parts

$1.760

9,600

-

-

$1.910

$1.760

Cyclops Electronics Ltd

UK . 8,654 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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8,654

-

-

-

-

Dynamic Solutions

Germany . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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4,000

-

-

-

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Vyrian

USA . 2,488 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,488

-

-

-

-

Component Sense

UK . 1,211 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,211

-

-

-

-

IBS Electronics

USA . 672 parts In-Stock

1+ parts

-

100+ parts

$37.587

1k+ parts

-

10k+ parts

-

672

-

$37.587

-

-

ComSIT Distribution GmbH

Germany . 300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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300

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 656 parts In-Stock

1+ parts

$1.404

100+ parts

-

1k+ parts

-

10k+ parts

-

656

$1.404

-

-

-

Andel Nordic

Denmark . 587 parts In-Stock

1+ parts

$1.499

100+ parts

-

1k+ parts

$1.439

10k+ parts

$1.439

587

$1.499

-

$1.439

$1.439

Semicontronic

India . 2,493 parts In-Stock

1+ parts

$1.760

100+ parts

$1.716

1k+ parts

$1.707

10k+ parts

-

2,493

$1.760

$1.716

$1.707

-

Ampacity Inc.

Singapore . 2,123 parts In-Stock

1+ parts

$1.970

100+ parts

-

1k+ parts

-

10k+ parts

-

2,123

$1.970

-

-

-

Corohmni

South Africa . 29 parts In-Stock

1+ parts

$2.192

100+ parts

-

1k+ parts

-

10k+ parts

-

29

$2.192

-

-

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Argo Parts USA

USA . 4,028 parts In-Stock

1+ parts

$2.433

100+ parts

-

1k+ parts

-

10k+ parts

-

4,028

$2.433

-

-

-

Continental Prestige Electronics

USA . 955 parts In-Stock

1+ parts

$2.880

100+ parts

$1.960

1k+ parts

$1.770

10k+ parts

-

955

$2.880

$1.960

$1.770

-

Aztec Data Supply Inc.

USA . 261 parts In-Stock

1+ parts

$4.255

100+ parts

-

1k+ parts

-

10k+ parts

-

261

$4.255

-

-

-

Advanced Electronics

New Zealand . 60 parts In-Stock

1+ parts

$5.310

100+ parts

$5.044

1k+ parts

$5.044

10k+ parts

-

60

$5.310

$5.044

$5.044

-

RC Electronics

USA . 46,078 parts In-Stock

1+ parts

-

100+ parts

$2.390

1k+ parts

$2.180

10k+ parts

$2.120

46,078

-

$2.390

$2.180

$2.120

Perfect Parts

USA . 40,181 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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40,181

-

-

-

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Infinite Electronics LLP (Excess)

. 35,001 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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35,001

-

-

-

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Kepictronics

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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12,000

-

-

-

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A-Z Elektronik GmbH

Germany . 10,598 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,598

-

-

-

-

Epart123

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.350

10k+ parts

$1.350

9,000

-

-

$1.350

$1.350

S.R.D Solutions

India . 4,461 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,461

-

-

-

-

GreenTree Electronics

Israel . 2,262 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,262

-

-

-

-

Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$2.470

1k+ parts

$2.394

10k+ parts

$2.344

1,000

-

$2.470

$2.394

$2.344

Overview

Unlock the power of reliable and high-quality data storage with the MT29F1G08ABAEAWP-IT:E by Micron Technology. As a leading manufacturer in flash memory technology, Micron delivers cutting-edge solutions for a wide range of applications. This flash memory device offers exceptional value, benefits, and advantages to customers looking for fast and efficient data storage options. Trust in Micron's expertise and experience to enhance your products and elevate your technology to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the flash memory, making it a reliable choice.

Surface Mount: YES

The surface mount capability allows for easy integration into electronic devices, saving time and effort during assembly.

No. of Functions: 1

With a single function, this flash memory simplifies system design and reduces complexity in applications.

Package Shape: RECTANGULAR

The rectangular shape of the package ensures efficient use of space and easy placement within electronic circuits.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility and allows for faster data transfer speeds, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V ensures compatibility with a wide range of devices, making it a versatile choice for various applications.

No. of Terminals: 48

With 48 terminals, this flash memory offers ample connectivity options and facilitates seamless integration within a system.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile package style saves space and allows for compact designs, ideal for portable electronics.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures reliable performance even in challenging environmental conditions.

Organization: 128MX8

The organization structure of 128MX8 offers efficient data storage and retrieval capabilities, enhancing overall system efficiency.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures reliable performance even in extreme cold environments.

Terminal Finish: Matte Tin (Sn)

The matte tin terminal finish provides corrosion resistance and ensures a reliable electrical connection for long-term use.

Terminal Position: DUAL

The dual terminal position allows for flexible installation options and ensures secure connectivity within a system.

Maximum Seated Height: 1.2 mm

The maximum seated height of 1.2mm allows for slim and compact device designs, ideal for space-constrained applications.

Width: 12 mm

The width of 12mm offers a compact form factor, making it suitable for use in smaller electronic devices.

Minimum Supply Voltage (Vsup): 2.7 V

The low minimum supply voltage of 2.7V ensures energy efficiency and compatibility with a wide range of power sources.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures reliable soldering and assembly of the flash memory.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures secure solder joints and reliable performance in various assembly processes.

Type: SLC NAND TYPE

The SLC NAND type offers high reliability, fast data transfer speeds, and increased endurance, making it suitable for critical applications.

Length: 18.4 mm

The length of 18.4mm allows for a compact and ergonomic design, suitable for smaller electronic devices.

Programming Voltage (V): 2.7

The programming voltage of 2.7V ensures precise data programming and reliable operation of the flash memory.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliable performance in rugged environments and enhances the durability of the flash memory.

Technology: CMOS

The CMOS technology offers low power consumption, high speed, and reliable operation, making it an efficient choice for various applications.

Parallel or Serial: PARALLEL

The parallel interface provides fast data transfer speeds and efficient communication, making it ideal for applications requiring high performance.

Terminal Form: GULL WING

The gull wing terminal form ensures secure attachment and reliable electrical connections, enhancing the overall durability of the flash memory.

No. of Words: 134217728 words

With a large number of words, this flash memory offers ample storage capacity and efficient data processing capabilities.

Memory Width: 8

The memory width of 8 bits provides sufficient data processing capabilities and ensures compatibility with a wide range of applications.

Terminal Pitch: 0.5 mm

The small terminal pitch of 0.5mm allows for compact design layouts and efficient use of space within electronic devices.

No. of Words Code: 128M

The 128M words code offers efficient data organization and storage, enhancing the overall performance of the flash memory.

Maximum Supply Voltage (Vsup): 3.6 V

The high maximum supply voltage of 3.6V ensures compatibility with a wide range of power sources and allows for reliable operation in various environments.

Memory Density: 1073741824 bit

With a high memory density, this flash memory offers ample storage capacity for large data sets and complex applications.

Memory IC Type: FLASH

The flash memory IC type offers fast read and write speeds, high reliability, and high endurance, making it an excellent choice for data storage applications.

Technical Specifications

Flash Memory MT29F1G08ABAEAWP-IT:E attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

48

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

SLC NAND TYPE

Width:

12 mm

Trade Compliance

MT29F1G08ABAEAWP-IT:E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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