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MT29F8G08ABABAWP-IT:B

Micron Technology

MT29F8G08ABABAWP-IT:B by Micron Technology

Micron Technology's MT29F8G08ABABAWP-IT:B is a 3.3V SLC NAND flash memory with 1GX8 organization, 2K sectors, and 4K page size. It operates in industrial temperatures (-40 to 85 °C) with 100000 write/erase cycles endurance. Ideal for applications requiring high-density parallel memory storage.

Median Price

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Chip Stock

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Digiode

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Nova Conductors

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ComSIT Distribution GmbH

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ComSIT USA

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ACDS - Activité Composants Distribution Service

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Avant Electronics Limited

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Bristol Electronics

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Goldney Electronics S.L.

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Atlantic Semiconductor

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NexGen Digital

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Corohmni

South Africa . 1,096 parts In-Stock

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$2.201

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Aztec Data Supply Inc.

USA . 2,476 parts In-Stock

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AZTECH Wire

Italy . 554 parts In-Stock

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Ampacity Inc.

Singapore . 1,211 parts In-Stock

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Semicontronic

India . 1,336 parts In-Stock

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GreenTree Electronics

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Epart123

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Continental Prestige Electronics

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Argo Parts USA

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XScomponents

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Overview

Elevate your devices to new heights with the MT29F8G08ABABAWP-IT:B by Micron Technology. Known for their superior quality and cutting-edge technology, Micron delivers top-of-the-line flash memory solutions that guarantee optimal performance and reliability. Whether you're looking to enhance storage capacity in industrial applications or improve data transfer speeds in consumer electronics, this versatile memory device is sure to exceed your expectations. Experience the value and benefits of Micron Technology today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is durable and lightweight, making the product easy to handle and resistant to damage.

Nominal Supply Voltage / Vsup (V): 3.3

Operates efficiently at a standard voltage of 3.3V, ensuring reliable performance and compatibility with most systems.

Maximum Operating Temperature: 85 °C

Capable of functioning in high-temperature environments, providing versatility and reliability in various conditions.

Technology: CMOS

Utilizes CMOS technology for low power consumption and efficient operation, making it energy-efficient and cost-effective.

Endurance: 100000 Write/Erase Cycles

Offers high endurance with 100,000 write/erase cycles, ensuring long-term reliability and durability for data storage.

Technical Specifications

Flash Memory MT29F8G08ABABAWP-IT:B attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Command User Interface:

YES

Data Polling:

NO

Minimum Data Retention Time:

10

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

8589934592 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

2K

No. of Terminals:

48

No. of Words:

1073741824 words

No. of Words Code:

1G

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1GX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Page Size (words):

4K

Parallel or Serial:

PARALLEL

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

512K

Maximum Standby Current:

.00005 Amp

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

SLC NAND TYPE

Width:

12 mm

Trade Compliance

MT29F8G08ABABAWP-IT:B Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.1.A

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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