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MT29F1G08ABADAWP-ITX:D

Micron Technology

MT29F1G08ABADAWP-ITX:D by Micron Technology

Micron Technology's MT29F1G08ABADAWP-ITX:D is a 128Mx8 SLC NAND flash memory with 3.3V programming voltage, operating in industrial temperature range. It features 2K page size, 128K sector size, and parallel interface. Ideal for applications requiring high-speed data storage and retrieval in harsh environments.

Median Price

$3.880

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 77 parts In-Stock

1+ parts

$3.880

100+ parts

-

1k+ parts

-

10k+ parts

-

77

$3.880

-

-

-

Chip Stock

USA . 4,553 parts In-Stock

1+ parts

-

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1k+ parts

-

10k+ parts

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4,553

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-

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Vyrian

USA . 4,050 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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4,050

-

-

-

-

Digiode

USA . 1,934 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,934

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-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 3,002 parts In-Stock

1+ parts

$3.170

100+ parts

-

1k+ parts

-

10k+ parts

-

3,002

$3.170

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-

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Corohmni

South Africa . 301 parts In-Stock

1+ parts

$3.880

100+ parts

-

1k+ parts

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10k+ parts

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301

$3.880

-

-

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Argo Parts USA

USA . 3,712 parts In-Stock

1+ parts

$3.880

100+ parts

-

1k+ parts

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10k+ parts

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3,712

$3.880

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-

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Continental Prestige Electronics

USA . 3,362 parts In-Stock

1+ parts

$3.880

100+ parts

-

1k+ parts

-

10k+ parts

$3.802

3,362

$3.880

-

-

$3.802

Netroflash

USA . 50 parts In-Stock

1+ parts

$3.880

100+ parts

-

1k+ parts

$3.686

10k+ parts

$3.608

50

$3.880

-

$3.686

$3.608

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$3.996

100+ parts

$3.797

1k+ parts

$3.797

10k+ parts

-

500

$3.996

$3.797

$3.797

-

AZTECH Wire

Italy . 526 parts In-Stock

1+ parts

$17.012

100+ parts

-

1k+ parts

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10k+ parts

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526

$17.012

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Semicontronic

India . 238 parts In-Stock

1+ parts

$24.000

100+ parts

$23.400

1k+ parts

$23.280

10k+ parts

-

238

$24.000

$23.400

$23.280

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RC Electronics

USA . 7,115 parts In-Stock

1+ parts

-

100+ parts

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7,115

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

1+ parts

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100+ parts

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4,000

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Corphita

USA . 1,600 parts In-Stock

1+ parts

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1,600

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Perfect Parts

USA . 1,409 parts In-Stock

1+ parts

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1,409

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Microchip USA

USA . 427 parts In-Stock

1+ parts

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100+ parts

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427

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Overview

Experience the power of reliable and efficient data storage with Micron Technology's MT29F1G08ABADAWP-ITX:D flash memory. Built with high-quality materials and advanced technology, this product offers unparalleled performance in a compact package. Ideal for industrial applications, this flash memory provides fast access times and low standby current, ensuring your data is always secure and accessible when you need it most. Upgrade to Micron Technology's flash memory and discover a world of possibilities for your data storage needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is durable and lightweight, making the product ideal for portable devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent read and write operations, increasing efficiency.

Nominal Supply Voltage: 3.3V

Operating at a standard voltage of 3.3V ensures compatibility with a wide range of systems.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product is suitable for industrial applications where heat can be a concern.

Organization: 128MX8

The 128MX8 organization provides a balance between storage capacity and data access speed.

Page Size: 2K words

A larger page size allows for more efficient data storage and retrieval.

Technology: CMOS

CMOS technology offers low power consumption and high speed, making the product energy efficient.

Memory Density: 1073741824 bit

With a high memory density, this product can store large amounts of data in a compact form factor.

Technical Specifications

Flash Memory MT29F1G08ABADAWP-ITX:D attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

25 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

1K

No. of Terminals:

48

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Page Size (words):

2K

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Programming Voltage (V):

3.3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

128K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

SLC NAND TYPE

Width:

12 mm

Trade Compliance

MT29F1G08ABADAWP-ITX:D Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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