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MT29F2G08ABAEAH4-IT:E

Micron Technology

MT29F2G08ABAEAH4-IT:E by Micron Technology

MT29F2G08ABAEAH4-IT:E by Micron Technology is a 256MX8 SLC NAND flash memory with a capacity of 2GB. It operates at a voltage of 3.3V and has an industrial temperature grade. This flash memory is suitable for applications that require high-speed data storage and retrieval in harsh environments.

Median Price

$6.365

Lifecycle Status

Suppliers In-Stock

29

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,007 parts In-Stock

1+ parts

$2.840

100+ parts

$2.380

1k+ parts

$2.180

10k+ parts

-

1,007

$2.840

$2.380

$2.180

-

Mouser Electronics

USA . 4,300 parts In-Stock

1+ parts

$3.590

100+ parts

$3.020

1k+ parts

$2.840

10k+ parts

$2.830

4,300

$3.590

$3.020

$2.840

$2.830

Newark

USA . 912 parts In-Stock

1+ parts

$9.140

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-

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912

$9.140

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Element14

Singapore . 63 parts In-Stock

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$14.930

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63

$14.930

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Verical

USA . 1,638 parts In-Stock

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1,638

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EBV Elektronik

Germany . 1,260 parts In-Stock

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Distributors (In-Stock)

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Nova Conductors

Japan . 71 parts In-Stock

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$3.225

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Digiode

USA . 1,468 parts In-Stock

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$3.249

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1,468

$3.249

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Freelance Electronics

USA . 5 parts In-Stock

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$4.326

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5

$4.326

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Sensible Micro Corp

USA . 18,500 parts In-Stock

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Chip Stock

USA . 18,300 parts In-Stock

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NAC Semi

USA . 7,560 parts In-Stock

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$2.450

7,560

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$2.450

Dynamic Solutions

Germany . 4,000 parts In-Stock

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4,000

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Cyclops Electronics Ltd

UK . 3,009 parts In-Stock

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3,009

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Vyrian

USA . 1,828 parts In-Stock

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1,828

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Demsay Elektronik

Türkiye . 1,200 parts In-Stock

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Inventory MP

USA . 1,094 parts In-Stock

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1,094

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Bristol Electronics

USA . 1,094 parts In-Stock

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1,094

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HZD GmbH

Germany . 500 parts In-Stock

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500

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Rebound Electronics

UK . 239 parts In-Stock

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239

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ComSIT Distribution GmbH

Germany . 159 parts In-Stock

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159

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ComSIT USA

USA . 159 parts In-Stock

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159

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Semi Source

USA . 141 parts In-Stock

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141

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LWI Electronics Inc

India . 55 parts In-Stock

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55

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Component Sense

UK . 37 parts In-Stock

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Flip Electronics

USA . 30 parts In-Stock

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30

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A&K Electronics

USA . 18 parts In-Stock

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Rotakorn

Sweden . 18 parts In-Stock

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EMSNET

USA . 12 parts In-Stock

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Distributors (Availability)

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Advanced Electronics

New Zealand . 138 parts In-Stock

1+ parts

$2.404

100+ parts

$2.188

1k+ parts

$1.971

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138

$2.404

$2.188

$1.971

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Semicontronic

India . 4,605 parts In-Stock

1+ parts

$2.410

100+ parts

$2.350

1k+ parts

$2.338

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4,605

$2.410

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$2.338

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Corphita

USA . 2,189 parts In-Stock

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$3.078

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$3.078

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Argo Parts USA

USA . 4,147 parts In-Stock

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$3.225

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4,147

$3.225

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$3.225

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$3.160

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1,000

$3.225

$3.160

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Corohmni

South Africa . 527 parts In-Stock

1+ parts

$3.241

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527

$3.241

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Continental Prestige Electronics

USA . 1,250 parts In-Stock

1+ parts

$3.610

100+ parts

$2.490

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1,250

$3.610

$2.490

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Aztec Data Supply Inc.

USA . 220 parts In-Stock

1+ parts

$4.310

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220

$4.310

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GreenTree Electronics

Israel . 36,000 parts In-Stock

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36,000

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S.R.D Solutions

India . 21,200 parts In-Stock

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A-Z Elektronik GmbH

Germany . 11,800 parts In-Stock

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11,800

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Perfect Parts

USA . 8,076 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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Kepictronics

USA . 6,000 parts In-Stock

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RC Electronics

USA . 5,575 parts In-Stock

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5,575

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Technoshack Inc. (Excess)

Canada . 5,000 parts In-Stock

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5,000

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Resion (Excess)

USA . 3,000 parts In-Stock

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3,000

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Glotronic Ltd.

UK . 1,904 parts In-Stock

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1,904

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Futuretech Components

Singapore . 800 parts In-Stock

1+ parts

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800

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iodParts Technologies Inc.

India . 261 parts In-Stock

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261

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Overview

Discover the incredible performance and reliability of the MT29F2G08ABAEAH4-IT:E by Micron Technology. As a leading manufacturer in the industry, Micron Technology delivers top-quality flash memory products that are designed to exceed your expectations. With its versatile applications and advanced features, this flash memory is perfect for various industries and devices. Experience lightning-fast data transfer speeds, ample storage capacity, and reliable performance that will enhance your device's capabilities. Trust in Micron Technology for cutting-edge technology and exceptional value. Upgrade your device with the MT29F2G08ABAEAH4-IT:E and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY. This material provides durability and protection for the flash memory, making it a reliable choice for long-term use.

Surface Mount:

YES. This feature allows for convenient and easy installation of the flash memory onto circuit boards, saving time and effort during assembly.

No. of Functions:

1. With a single function, this flash memory focuses on its primary purpose, ensuring efficient and optimized performance in storing and retrieving data.

Package Shape:

RECTANGULAR. The rectangular shape of this flash memory enables compact and space-saving designs, making it ideal for applications with limited space.

Operating Mode:

ASYNCHRONOUS. The asynchronous operating mode allows for independent data transfers and access, providing flexibility and parallel processing capabilities.

Nominal Supply Voltage / Vsup (V):

3.3. This voltage ensures reliable and stable operation of the flash memory, contributing to its overall reliability and performance.

Power Supplies (V):

3/3.3. The availability of multiple power supply options allows for compatibility with different systems and power sources, enhancing versatility and ease of integration.

No. of Terminals:

63. The high number of terminals facilitates efficient communication and data transmission, enabling seamless connectivity and data transfer between the flash memory and other components.

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH. The grid array package style, along with the very thin profile and fine pitch, ensures a compact and space-saving design, making it well-suited for modern and small form factor devices.

Maximum Operating Temperature:

85 °C. The flash memory's ability to operate at high temperatures ensures reliable performance even in demanding and harsh environments, making it suitable for various industrial applications.

Organization:

256MX8. The 256MX8 organization provides a large capacity for storing data, enabling extensive data storage and retrieval capabilities.

Minimum Operating Temperature:

40 °C. The flash memory's ability to operate at low temperatures allows for reliable performance in extreme cold conditions, making it suitable for various environments and applications.

No. of Sectors/Size:

2K. The 2K sectors allow for efficient data organization and retrieval, optimizing storage space and improving data access times.

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu). The combination of tin, silver, and copper terminal finish offers excellent conductivity and corrosion resistance, ensuring reliable electrical connections and longevity of the flash memory.

Terminal Position:

BOTTOM. The bottom terminal position facilitates easy integration and installation onto circuit boards, enabling convenient PCB layout and assembly.

Maximum Seated Height:

1 mm. The flash memory's low seated height allows for compact designs and efficient utilization of space, making it suitable for applications with size limitations.

Width:

9 mm. The flash memory's compact width enables flexibility in design and enhances compatibility with various devices, making it versatile for different applications.

Minimum Supply Voltage (Vsup):

2.7 V. The low minimum supply voltage ensures compatibility with low-power systems, allowing for energy-efficient operation and increased battery life.

Page Size (words):

2K. With a 2K page size, the flash memory can efficiently store and retrieve data in fixed-size blocks, optimizing memory utilization and improving overall performance.

Maximum Time At Peak Reflow Temperature (s):

30. The flash memory can withstand extended exposure to peak reflow temperatures, ensuring reliable and stable performance during manufacturing processes.

Peak Reflow Temperature °C:

260. The flash memory's ability to withstand high peak reflow temperatures ensures that it can endure rigorous manufacturing processes without compromising its functionality.

Type:

SLC NAND TYPE. The SLC NAND type flash memory offers enhanced reliability, faster read/write speeds, and longer lifespan compared to other types, making it ideal for critical applications where durability and performance are crucial.

Length:

11 mm. The flash memory's length allows for efficient design integration and compatibility with various systems and devices, making it suitable for a wide range of applications.

Programming Voltage (V):

2.7. The programming voltage of 2.7V ensures optimal and efficient programming operations, contributing to faster data storage and retrieval.

Temperature Grade:

INDUSTRIAL. With an industrial temperature grade, this flash memory can operate reliably in extreme temperature ranges commonly found in industrial environments, ensuring consistent performance.

Technology:

CMOS. The CMOS technology used in this flash memory allows for low-power consumption, high-speed operation, and integration of various functionalities, making it a versatile and energy-efficient choice.

Parallel or Serial:

PARALLEL. The parallel interface allows for fast data transfer speeds and simultaneous operations, maximizing throughput and facilitating efficient data processing.

Terminal Form:

BALL. The ball terminal form provides robust and reliable electrical connections, ensuring secure and consistent performance in high-demand applications.

Sector Size (Words):

128K. The 128K sector size allows for efficient data management and flexible storage options, optimizing memory utilization and enhancing system performance.

Maximum Supply Current:

35 mA. The flash memory's low supply current ensures energy efficiency and conserves power, making it suitable for battery-powered devices with limited power resources.

No. of Words:

268435456 words. With a vast number of words, this flash memory provides ample capacity for storing extensive data, enabling reliable and versatile data storage solutions.

Memory Width:

8. The flash memory's 8-bit memory width allows for efficient data transfers and compatibility with various data bus configurations, enhancing system flexibility and performance.

Terminal Pitch:

0.8 mm. The small terminal pitch of 0.8 mm provides a compact form factor and design flexibility, enabling integration into space-constrained applications while maintaining reliable electrical connections.

No. of Words Code:

256M. The code consisting of 256M words indicates a large memory capacity, allowing for substantial data storage and retrieval capabilities.

Command User Interface:

YES. The command user interface feature enables easy and intuitive command-based communication with the flash memory, simplifying system integration and operation.

Ready or Busy:

YES. The ready or busy status feature allows for efficient management of data transmission and processing, ensuring synchronization and smooth operation in data-intensive applications.

Maximum Supply Voltage (Vsup):

3.6 V. The flash memory's maximum supply voltage of 3.6V ensures compatibility with a wide range of power sources and systems, offering versatility and ease of integration.

Memory Density:

2147483648 bit. With a high memory density of 2147483648 bits, this flash memory provides ample storage capacity for large amounts of data, making it suitable for data-intensive applications.

Memory IC Type:

FLASH. The flash memory IC type offers non-volatile storage capabilities, high data retention, and flexible read/write operations, making it a reliable and versatile choice for various applications.

Maximum Standby Current:

0.0001 Amp. The flash memory's low standby current minimizes power consumption during idle periods, contributing to energy efficiency and extended battery life.

Maximum Access Time:

25 ns. The flash memory's fast maximum access time ensures quick and efficient data retrieval, enhancing system performance and responsiveness.

Technical Specifications

Flash Memory MT29F2G08ABAEAH4-IT:E attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

25 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B63

JESD-609 Code:

e1

Length:

11 mm

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

2K

No. of Terminals:

63

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA63,10X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Page Size (words):

2K

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1 mm

Sector Size (Words):

128K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

SLC NAND TYPE

Width:

9 mm

Trade Compliance

MT29F2G08ABAEAH4-IT:E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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