Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
MT29F2G08ABAEAH4-IT:E by Micron Technology is a 256MX8 SLC NAND flash memory with a capacity of 2GB. It operates at a voltage of 3.3V and has an industrial temperature grade. This flash memory is suitable for applications that require high-speed data storage and retrieval in harsh environments.
Median Price
$3.590
Lifecycle Status
Suppliers In-Stock
28
In-Stock Inventory
1k+
Farnell
1+ parts
$2.840
100+ parts
$2.380
1k+ parts
$2.180
10k+ parts
-
Mouser Electronics
$3.020
$2.830
Element14
$14.930
Verical
EBV Elektronik
Nova Conductors
$3.225
Digiode
$3.249
Freelance Electronics
$4.326
Sensible Micro Corp
Chip Stock
NAC Semi
$2.450
Vyrian
Dynamic Solutions
Cyclops Electronics Ltd
Demsay Elektronik
Inventory MP
HZD GmbH
Rebound Electronics
ComSIT Distribution GmbH
ComSIT USA
Semi Source
LWI Electronics Inc
Component Sense
Flip Electronics
A&K Electronics
Rotakorn
Bristol Electronics
EMSNET
Advanced Electronics
$2.404
$2.188
$1.971
Semicontronic
$2.410
$2.350
$2.338
Corphita
$3.078
Argo Parts USA
Netroflash
$3.160
Corohmni
$3.241
Continental Prestige Electronics
$3.610
$2.490
Aztec Data Supply Inc.
$4.310
GreenTree Electronics
S.R.D Solutions
A-Z Elektronik GmbH
Perfect Parts
Authorized Procurement Solutions
Kepictronics
RC Electronics
Technoshack Inc. (Excess)
Resion (Excess)
Glotronic Ltd.
Futuretech Components
iodParts Technologies Inc.
PLASTIC/EPOXY. This material provides durability and protection for the flash memory, making it a reliable choice for long-term use.
YES. This feature allows for convenient and easy installation of the flash memory onto circuit boards, saving time and effort during assembly.
1. With a single function, this flash memory focuses on its primary purpose, ensuring efficient and optimized performance in storing and retrieving data.
RECTANGULAR. The rectangular shape of this flash memory enables compact and space-saving designs, making it ideal for applications with limited space.
ASYNCHRONOUS. The asynchronous operating mode allows for independent data transfers and access, providing flexibility and parallel processing capabilities.
3.3. This voltage ensures reliable and stable operation of the flash memory, contributing to its overall reliability and performance.
3/3.3. The availability of multiple power supply options allows for compatibility with different systems and power sources, enhancing versatility and ease of integration.
63. The high number of terminals facilitates efficient communication and data transmission, enabling seamless connectivity and data transfer between the flash memory and other components.
GRID ARRAY, VERY THIN PROFILE, FINE PITCH. The grid array package style, along with the very thin profile and fine pitch, ensures a compact and space-saving design, making it well-suited for modern and small form factor devices.
85 °C. The flash memory's ability to operate at high temperatures ensures reliable performance even in demanding and harsh environments, making it suitable for various industrial applications.
256MX8. The 256MX8 organization provides a large capacity for storing data, enabling extensive data storage and retrieval capabilities.
40 °C. The flash memory's ability to operate at low temperatures allows for reliable performance in extreme cold conditions, making it suitable for various environments and applications.
2K. The 2K sectors allow for efficient data organization and retrieval, optimizing storage space and improving data access times.
Tin/Silver/Copper (Sn/Ag/Cu). The combination of tin, silver, and copper terminal finish offers excellent conductivity and corrosion resistance, ensuring reliable electrical connections and longevity of the flash memory.
BOTTOM. The bottom terminal position facilitates easy integration and installation onto circuit boards, enabling convenient PCB layout and assembly.
1 mm. The flash memory's low seated height allows for compact designs and efficient utilization of space, making it suitable for applications with size limitations.
9 mm. The flash memory's compact width enables flexibility in design and enhances compatibility with various devices, making it versatile for different applications.
2.7 V. The low minimum supply voltage ensures compatibility with low-power systems, allowing for energy-efficient operation and increased battery life.
2K. With a 2K page size, the flash memory can efficiently store and retrieve data in fixed-size blocks, optimizing memory utilization and improving overall performance.
30. The flash memory can withstand extended exposure to peak reflow temperatures, ensuring reliable and stable performance during manufacturing processes.
260. The flash memory's ability to withstand high peak reflow temperatures ensures that it can endure rigorous manufacturing processes without compromising its functionality.
SLC NAND TYPE. The SLC NAND type flash memory offers enhanced reliability, faster read/write speeds, and longer lifespan compared to other types, making it ideal for critical applications where durability and performance are crucial.
11 mm. The flash memory's length allows for efficient design integration and compatibility with various systems and devices, making it suitable for a wide range of applications.
2.7. The programming voltage of 2.7V ensures optimal and efficient programming operations, contributing to faster data storage and retrieval.
INDUSTRIAL. With an industrial temperature grade, this flash memory can operate reliably in extreme temperature ranges commonly found in industrial environments, ensuring consistent performance.
CMOS. The CMOS technology used in this flash memory allows for low-power consumption, high-speed operation, and integration of various functionalities, making it a versatile and energy-efficient choice.
PARALLEL. The parallel interface allows for fast data transfer speeds and simultaneous operations, maximizing throughput and facilitating efficient data processing.
BALL. The ball terminal form provides robust and reliable electrical connections, ensuring secure and consistent performance in high-demand applications.
128K. The 128K sector size allows for efficient data management and flexible storage options, optimizing memory utilization and enhancing system performance.
35 mA. The flash memory's low supply current ensures energy efficiency and conserves power, making it suitable for battery-powered devices with limited power resources.
268435456 words. With a vast number of words, this flash memory provides ample capacity for storing extensive data, enabling reliable and versatile data storage solutions.
8. The flash memory's 8-bit memory width allows for efficient data transfers and compatibility with various data bus configurations, enhancing system flexibility and performance.
0.8 mm. The small terminal pitch of 0.8 mm provides a compact form factor and design flexibility, enabling integration into space-constrained applications while maintaining reliable electrical connections.
256M. The code consisting of 256M words indicates a large memory capacity, allowing for substantial data storage and retrieval capabilities.
YES. The command user interface feature enables easy and intuitive command-based communication with the flash memory, simplifying system integration and operation.
YES. The ready or busy status feature allows for efficient management of data transmission and processing, ensuring synchronization and smooth operation in data-intensive applications.
3.6 V. The flash memory's maximum supply voltage of 3.6V ensures compatibility with a wide range of power sources and systems, offering versatility and ease of integration.
2147483648 bit. With a high memory density of 2147483648 bits, this flash memory provides ample storage capacity for large amounts of data, making it suitable for data-intensive applications.
FLASH. The flash memory IC type offers non-volatile storage capabilities, high data retention, and flexible read/write operations, making it a reliable and versatile choice for various applications.
0.0001 Amp. The flash memory's low standby current minimizes power consumption during idle periods, contributing to energy efficiency and extended battery life.
25 ns. The flash memory's fast maximum access time ensures quick and efficient data retrieval, enhancing system performance and responsiveness.
Flash Memory MT29F2G08ABAEAH4-IT:E attributes and parameters. Explore more Flash Memory devices from Micron Technology
Maximum Access Time:
Command User Interface:
Data Polling:
JESD-30 Code:
JESD-609 Code:
Length:
Memory Density:
Memory IC Type:
Memory Width:
No. of Functions:
No. of Sectors/Size:
No. of Terminals:
No. of Words:
No. of Words Code:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Organization:
Package Body Material:
Package Code:
Package Equivalence Code:
Package Shape:
Package Style (Meter):
Page Size (words):
Parallel or Serial:
Peak Reflow Temperature (C):
Power Supplies (V):
Programming Voltage (V):
Qualification:
Ready or Busy:
Maximum Seated Height:
Sector Size (Words):
Maximum Standby Current:
Sub-Category:
Maximum Supply Current:
Maximum Supply Voltage (Vsup):
Minimum Supply Voltage (Vsup):
Nominal Supply Voltage / Vsup (V):
Surface Mount:
Technology:
Temperature Grade:
Terminal Finish:
Terminal Form:
Terminal Pitch:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Toggle Bit:
Type:
Width:
MT29F2G08ABAEAH4-IT:E Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.51
SB
8542.32.00.50
PCN Design/Specification - Memory 24-May-2022
PCN Assembly/Origin - Tray Pkg Label Chgs 8/Oct/2020
PCN Packaging - Tray 05-May-2022
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
2N7002
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Transistor Application: SWITCHING;
BAV99
Infinex
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
NE555D
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
C0603C104K5RACTU
KEMET Corporation
KEMET C0603C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V URdc. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
OPA2277UA/2K5E4
Texas Instruments
OPA2277UA/2K5E4 by Texas Instruments is a dual operational amplifier with low-offset and micropower features. It has a max input offset voltage of 100uV, nominal common mode reject ratio of 140dB, and min slew rate of 0.8V/us. Ideal for industrial applications requiring precise signal amplification in compact designs.
BSS138BK,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Operating Temperature: 150 Cel;
Diotec Semiconductor Ag
LM358DR2G
Onsemi
LM358DR2G by Onsemi is a dual operational amplifier with 7000uV max input offset voltage and 70dB nominal CMRR. Ideal for applications requiring low bias current such as sensor interfaces, signal conditioning circuits, and audio amplifiers. Package style: Small Outline, Technology: Bipolar, Unity Gain Bandwidth: 1000 kHz.
Vishay Intertechnology
2N7002 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE, suitable for surface mount with GULL WING terminals.
LL4148
Temic Semiconductors
RECTIFIER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
1N4148WT
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Pro-an Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BSS138W-7-F
Diodes Incorporated
Diodes Inc.'s BSS138W-7-F is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2A max drain current and 3.5 ohm RDS(on), it's UL recognized and suitable for small outline packages at temperatures ranging from -55 to 150°C.
SMBJ18CA
Transpro Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Breakdown Voltage: 21.1 V; Maximum Clamping Voltage: 29.2 V;
E8WSDC12-32.768KTR
Abracon
Abracon's E8WSDC12-32.768KTR crystal oscillator offers 20 ppm frequency tolerance, 144% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and communication systems.
M39029/58-360
Positronic Industries
CONNECTOR ACCESSORY; MIL-Connector Accessory Name: CONTACT; DIN Conformity: NO; National Stock Number (NSN): 5999004733551; Mating Contacts: M39029/56-348, M39029/57-354; Contact Type: CRIMP REAR RELEASE;
SS14
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
New Jersey Semiconductor Products
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;
DS18B20U+
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: SQUARE; Housing: PLASTIC; Minimum Supply Voltage: 3 V;
Fagor Electronica S Coop
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
AT25SF041B-SSHD-B
Renesas Electronics
AT25SF041B-SSHD-B by Renesas Electronics is a NOR type flash memory with 4Mx1 organization, operating at up to 108MHz clock frequency. It offers 100,000 write/erase cycles and is suitable for industrial applications requiring high endurance serial SPI memory with a supply voltage range of 2.7V to 3.6V.
KLMAG1JETD-B041
Samsung
Samsung's KLMAG1JETD-B041 Flash Memory features 16GX8 organization, 1.8V programming voltage, and 137.4Gbit memory density. Ideal for compact devices due to its 0.8mm height, it operates b/w -25°C to 85°C temperatures with a width of 11.5mm and length of 13mm.
AT45DB161E-SSHD-B
Dialog Semiconductor
FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; No. of Words Code: 16M;
IS25LP128F-JBLE
Integrated Silicon Solution
IS25LP128F-JBLE by Integrated Silicon Solution is a 16MX8 NOR Flash Memory with 166 MHz clock frequency, SPI serial bus type, and 100000 write/erase cycles endurance. Ideal for industrial applications requiring high-speed data storage in a compact form factor.
S25FL512SAGBHI210
Infineon Technologies
S25FL512SAGBHI210 by Infineon Technologies is a 64MX8 NOR type flash memory with 512753664 bit density. It operates at 3V, has a clock frequency of 133 MHz, and offers 100000 write/erase cycles. Ideal for industrial applications requiring high-speed synchronous operation in a compact GRID ARRAY package.
S29GL128P90FFIR20
Cypress Semiconductor
FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Supply Current: 110 mA;
S29GL064S70TFI010
S29GL064S70TFI010 by Infineon Technologies is an 8MX8 flash memory with a memory density of 67108864 bits. It operates in asynchronous mode with a max access time of 70 ns, suitable for industrial applications requiring fast and reliable data storage. The package style is small outline, thin profile, shrink pitch, making it ideal for space-constrained designs.
MT25QU128ABB8E12-0AUT
Micron Technology
Micron Technology's MT25QU128ABB8E12-0AUT is a 16MX8 flash memory IC with 16777216 words capacity. Operating at 166 MHz, it supports synchronous mode and has a supply voltage range of 1.7V to 2V. Designed for automotive applications, this thin-profile grid array package offers high memory density and AEC-Q100 screening level.
SDINBDG4-16G-I1
Sandisk
FLASH CARD; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL; No. of Words Code: 16G;
W25N01GVZEIG
Winbond Electronics
W25N01GVZEIG by Winbond Electronics is a 1Gx1 SLC NAND flash memory with SPI serial bus type, operating at 104MHz clock frequency. It has a max supply voltage of 3.6V and endurance of 100K write/erase cycles. Ideal for industrial applications requiring high-speed data storage in compact devices.
AM29F800BB-70EF
Spansion
AM29F800BB-70EF by Spansion is a 512Kx16 NOR flash memory with 8388608-bit density. Operating at 5V, it offers 1000000 write/erase cycles and has a max access time of 70ns. Ideal for industrial applications requiring fast, reliable non-volatile memory storage.
S29JL064J55TFI000
FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Sector Size (Words): 8K,64K;
W25Q64JVSFIQ
Winbond Electronics' W25Q64JVSFIQ is a 3.3V NOR flash memory with 8MX8 organization, SPI serial bus type, and 133 MHz clock frequency. Ideal for industrial applications, it offers 100000 write/erase cycles and operates in a temperature range of -40 to 85 °C.
SST26VF016B-104I/SN-RN
Microchip Technology
SST26VF016B-104I/SN-RN by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock freq., SPI serial bus. Ideal for industrial applications requiring high-speed synchronous operation and 100000 write/erase cycles. Operating temp range -40 to 85 °C with AEC-Q100 screening level.
S29GL256S90FHI020
S29GL256S90FHI020 by Infineon Technologies is a 32Mx8 NAND flash memory with 256 sectors and 128K words per sector. Operating at 3V, it offers a max access time of 90ns and endurance of 100,000 write/erase cycles. Ideal for applications requiring fast data polling and common flash interface support.
SST25VF080B-50-4C-PAE
SST25VF080B-50-4C-PAE by Microchip: 8MX1 flash memory with 8388608-bit density, SPI serial bus, and 50 MHz clock freq. Ideal for hardware/software write protection in commercial-grade applications.
S29JL032J70TFI420
FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;
MT29F128G08AJAAAWP-ITZ:ATR
FLASH; Type: MLC NAND TYPE; Programming Voltage (V): 2.7; JESD-609 Code: e3; Terminal Finish: MATTE TIN;
S25FL512SAGBHIC13
S25FL512SAGBHIC13 by Infineon Technologies is a 64MX8 NOR type flash memory with 512753664 bit density. Operating at 3V, it offers a clock frequency of up to 133 MHz and endurance of 100K cycles. Ideal for industrial applications requiring high-speed serial data storage with hardware/software write protection.
SST25VF010A-33-4C-SAE
SST25VF010A-33-4C-SAE by Microchip Technology is a 1Mx1 NOR type flash memory with 3.9mm width, 4.9mm length, and 1.75mm max seated height. Operating at 33MHz clock frequency, it's ideal for applications requiring small outline package style and SPI serial bus interface in commercial temperature grade environments.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
MT29F16G08ABACAWP-ITZ:CTR
Micron Technology's MT29F16G08ABACAWP-ITZ:CTR is a 3.3V SLC NAND Flash Memory with 2GX8 organization, operating from -40 to 85 °C. It features a small outline package, parallel interface, and industrial temperature grade suitable for embedded systems and data storage applications.
MT29F2G08ABAEAWP-IT:E
Micron Technology's MT29F2G08ABAEAWP-IT:E is a 256MX8 SLC NAND Flash Memory with 2K sectors and 100,000 Write/Erase cycles. Operating at 3.3V, it offers industrial-grade reliability for applications requiring high endurance and fast data access. With a compact form factor of 18.4mm x 12mm and low standby current of 0.0001A, it is ideal for embedded systems in harsh environments.
MT29F16G08ABACAWP-ITZ:C
MT29F16G08ABACAWP-ITZ:C by Micron Technology is a 3.3V SLC NAND Flash Memory with 2GX8 organization, operating from -40 to 85 °C. It has a memory density of 17179869184 bit and is suitable for industrial applications requiring reliable, high-speed data storage in compact devices.
MT29F2G08ABAEAWP-IT:ETR
Micron Technology's MT29F2G08ABAEAWP-IT:ETR is a 256MX8 SLC NAND flash memory with 2K sectors and 100,000 write/erase cycles. Operating at 3.3V, it offers industrial-grade temperature range (-40 to 85°C) for applications requiring high endurance and reliability in small outline packages.
MT29F1G08ABAEAWP-IT:E
Micron Technology's MT29F1G08ABAEAWP-IT:E is a 3.3V SLC NAND Flash Memory with 128Mx8 organization, operating from -40 to 85°C. It features a small outline package, parallel interface, and industrial temperature grade suitable for various embedded applications.
MT29F8G08ABABAWP-IT:B
Micron Technology's MT29F8G08ABABAWP-IT:B is a 3.3V SLC NAND flash memory with 1GX8 organization, 2K sectors, and 4K page size. It operates in industrial temperatures (-40 to 85 °C) with 100000 write/erase cycles endurance. Ideal for applications requiring high-density parallel memory storage.
MT29F8G08ABABAWP-ITX:B
Micron Technology's MT29F8G08ABABAWP-ITX:B is an 8Gb SLC NAND flash memory with 3.3V supply voltage, operating from -40 to 85°C. It has a memory density of 8.58 Gb and is suitable for industrial applications requiring high reliability and performance in a surface-mount package.
MT29F128G08AJAAAWP-ITZ:A
Micron Technology's MT29F128G08AJAAAWP-ITZ:A is a 3.3V MLC NAND Flash Memory with 16GX8 organization, operating from -40 to 85 °C. It has a memory density of 137.4Gb and is suitable for industrial applications requiring high-speed parallel data storage.
MT29F2G16ABAEAWP:ETR
Micron Technology's MT29F2G16ABAEAWP:ETR is a 3.3V SLC NAND flash memory with 128Mx16 organization and 2147483648-bit memory density. Operating in asynchronous mode, it has a temperature range of 0-70°C and is suitable for commercial applications requiring high-speed parallel memory access.
MT29F1G08ABADAWP-IT:DTR
Micron Technology's MT29F1G08ABADAWP-IT:DTR is a 128MX8 SLC NAND flash memory with 1073741824-bit density. Operating at 3.3V, it has an industrial temperature grade and supports parallel mode. With a compact form factor of 18.4mm x 12mm x 1.2mm, it is ideal for high-performance embedded applications requiring reliable non-volatile storage.
MT29F16G08ABACAWP-AAT:C
FLASH; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Screening Level: AEC-Q100; Organization: 2GX8;
MT29F1G08ABADAWP-IT:D
Micron Technology's MT29F1G08ABADAWP-IT:D is a 3.3V SLC NAND flash memory with 128Mx8 organization, operating in industrial temperature range. It features 2K page size, 128K sector size, and parallel interface. Ideal for applications requiring fast access times and high memory density.
MT29F1G08ABADAWP-ITX:D
Micron Technology's MT29F1G08ABADAWP-ITX:D is a 128Mx8 SLC NAND flash memory with 3.3V programming voltage, operating in industrial temperature range. It features 2K page size, 128K sector size, and parallel interface. Ideal for applications requiring high-speed data storage and retrieval in harsh environments.
MT29F4G08ABADAWP-IT:D
MT29F4G08ABADAWP-IT:D by Micron Technology is a 512MX8 SLC NAND flash memory with 3.3V programming voltage and 2K page size. Ideal for industrial applications, it offers fast access time of 25ns, low standby current of 0.0001A, and operates in a temperature range from -40 to 85°C.
MT29F1G08ABADAWP-ITX:DTR
Micron Technology's MT29F1G08ABADAWP-ITX:DTR is a 128MX8 SLC NAND flash memory with 1073741824 bit density. Operating at 3.3V, it has an industrial temperature grade and supports asynchronous mode. This rectangular package with 48 terminals is suitable for various applications requiring high-speed parallel memory access.
MT29F2G01ABAGDWB-IT:GTR
FLASH; Programming Voltage (V): 3.3; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Type: SLC NAND TYPE;
MT29F8G08ABACAWP-IT:CTR
MT29F8G08ABACAWP-IT:CTR by Micron Technology is a 3.3V SLC NAND flash memory with 1GX8 organization, offering 8K sectors and 2K page size. Operating in industrial temperature range (-40 to 85 °C), it has a max endurance of 100k cycles. Ideal for applications requiring high-density, reliable storage solutions.
MT29F2G08ABAGAWP-IT:G
Micron Technology's MT29F2G08ABAGAWP-IT:G is an industrial-grade SLC NAND flash memory with 256Mx8 organization, operating from -40 to 85°C. It offers a memory density of 2147483648 bits and operates in asynchronous mode. Ideal for applications requiring high reliability and performance in harsh environments.
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved