Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
MT29F2G08ABAEAH4-IT:E by Micron Technology is a 256MX8 SLC NAND flash memory with a capacity of 2GB. It operates at a voltage of 3.3V and has an industrial temperature grade. This flash memory is suitable for applications that require high-speed data storage and retrieval in harsh environments.
Median Price
$3.590
Lifecycle Status
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28
In-Stock Inventory
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HZD GmbH
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ComSIT Distribution GmbH
ComSIT USA
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EMSNET
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Semicontronic
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RC Electronics
Technoshack Inc. (Excess)
Resion (Excess)
Glotronic Ltd.
Futuretech Components
iodParts Technologies Inc.
PLASTIC/EPOXY. This material provides durability and protection for the flash memory, making it a reliable choice for long-term use.
YES. This feature allows for convenient and easy installation of the flash memory onto circuit boards, saving time and effort during assembly.
1. With a single function, this flash memory focuses on its primary purpose, ensuring efficient and optimized performance in storing and retrieving data.
RECTANGULAR. The rectangular shape of this flash memory enables compact and space-saving designs, making it ideal for applications with limited space.
ASYNCHRONOUS. The asynchronous operating mode allows for independent data transfers and access, providing flexibility and parallel processing capabilities.
3.3. This voltage ensures reliable and stable operation of the flash memory, contributing to its overall reliability and performance.
3/3.3. The availability of multiple power supply options allows for compatibility with different systems and power sources, enhancing versatility and ease of integration.
63. The high number of terminals facilitates efficient communication and data transmission, enabling seamless connectivity and data transfer between the flash memory and other components.
GRID ARRAY, VERY THIN PROFILE, FINE PITCH. The grid array package style, along with the very thin profile and fine pitch, ensures a compact and space-saving design, making it well-suited for modern and small form factor devices.
85 °C. The flash memory's ability to operate at high temperatures ensures reliable performance even in demanding and harsh environments, making it suitable for various industrial applications.
256MX8. The 256MX8 organization provides a large capacity for storing data, enabling extensive data storage and retrieval capabilities.
40 °C. The flash memory's ability to operate at low temperatures allows for reliable performance in extreme cold conditions, making it suitable for various environments and applications.
2K. The 2K sectors allow for efficient data organization and retrieval, optimizing storage space and improving data access times.
Tin/Silver/Copper (Sn/Ag/Cu). The combination of tin, silver, and copper terminal finish offers excellent conductivity and corrosion resistance, ensuring reliable electrical connections and longevity of the flash memory.
BOTTOM. The bottom terminal position facilitates easy integration and installation onto circuit boards, enabling convenient PCB layout and assembly.
1 mm. The flash memory's low seated height allows for compact designs and efficient utilization of space, making it suitable for applications with size limitations.
9 mm. The flash memory's compact width enables flexibility in design and enhances compatibility with various devices, making it versatile for different applications.
2.7 V. The low minimum supply voltage ensures compatibility with low-power systems, allowing for energy-efficient operation and increased battery life.
2K. With a 2K page size, the flash memory can efficiently store and retrieve data in fixed-size blocks, optimizing memory utilization and improving overall performance.
30. The flash memory can withstand extended exposure to peak reflow temperatures, ensuring reliable and stable performance during manufacturing processes.
260. The flash memory's ability to withstand high peak reflow temperatures ensures that it can endure rigorous manufacturing processes without compromising its functionality.
SLC NAND TYPE. The SLC NAND type flash memory offers enhanced reliability, faster read/write speeds, and longer lifespan compared to other types, making it ideal for critical applications where durability and performance are crucial.
11 mm. The flash memory's length allows for efficient design integration and compatibility with various systems and devices, making it suitable for a wide range of applications.
2.7. The programming voltage of 2.7V ensures optimal and efficient programming operations, contributing to faster data storage and retrieval.
INDUSTRIAL. With an industrial temperature grade, this flash memory can operate reliably in extreme temperature ranges commonly found in industrial environments, ensuring consistent performance.
CMOS. The CMOS technology used in this flash memory allows for low-power consumption, high-speed operation, and integration of various functionalities, making it a versatile and energy-efficient choice.
PARALLEL. The parallel interface allows for fast data transfer speeds and simultaneous operations, maximizing throughput and facilitating efficient data processing.
BALL. The ball terminal form provides robust and reliable electrical connections, ensuring secure and consistent performance in high-demand applications.
128K. The 128K sector size allows for efficient data management and flexible storage options, optimizing memory utilization and enhancing system performance.
35 mA. The flash memory's low supply current ensures energy efficiency and conserves power, making it suitable for battery-powered devices with limited power resources.
268435456 words. With a vast number of words, this flash memory provides ample capacity for storing extensive data, enabling reliable and versatile data storage solutions.
8. The flash memory's 8-bit memory width allows for efficient data transfers and compatibility with various data bus configurations, enhancing system flexibility and performance.
0.8 mm. The small terminal pitch of 0.8 mm provides a compact form factor and design flexibility, enabling integration into space-constrained applications while maintaining reliable electrical connections.
256M. The code consisting of 256M words indicates a large memory capacity, allowing for substantial data storage and retrieval capabilities.
YES. The command user interface feature enables easy and intuitive command-based communication with the flash memory, simplifying system integration and operation.
YES. The ready or busy status feature allows for efficient management of data transmission and processing, ensuring synchronization and smooth operation in data-intensive applications.
3.6 V. The flash memory's maximum supply voltage of 3.6V ensures compatibility with a wide range of power sources and systems, offering versatility and ease of integration.
2147483648 bit. With a high memory density of 2147483648 bits, this flash memory provides ample storage capacity for large amounts of data, making it suitable for data-intensive applications.
FLASH. The flash memory IC type offers non-volatile storage capabilities, high data retention, and flexible read/write operations, making it a reliable and versatile choice for various applications.
0.0001 Amp. The flash memory's low standby current minimizes power consumption during idle periods, contributing to energy efficiency and extended battery life.
25 ns. The flash memory's fast maximum access time ensures quick and efficient data retrieval, enhancing system performance and responsiveness.
Flash Memory MT29F2G08ABAEAH4-IT:E attributes and parameters. Explore more Flash Memory devices from Micron Technology
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MT29F2G08ABAEAH4-IT:E Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.51
SB
8542.32.00.50
PCN Design/Specification - Memory 24-May-2022
PCN Assembly/Origin - Tray Pkg Label Chgs 8/Oct/2020
PCN Packaging - Tray 05-May-2022
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
BAV99
First Components International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Micro Commercial Components
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N7002
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Transistor Application: SWITCHING;
LL4148
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N2222A
Semicoa
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Microchip Technology
Samsung
N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;
NE555/D
General Electric Solid State
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; Maximum Operating Temperature: 70 Cel; Technology: BIPOLAR; Package Equivalence Code: DIE OR CHIP; Qualification: Not Qualified;
Formosa Microsemi
MMBT2907ALT1G
Onsemi
MMBT2907ALT1G by Onsemi is a PNP BJT transistor with 100 min hFE, 60V VCEO, and 200MHz fT. Ideal for switching applications, it has a small outline package with Gull Wing terminals and can handle up to 0.6A of collector current.
ULN2803A
Vishay Intertechnology
NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDIP-T18;
Transys Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 60 V; Maximum Operating Temperature: 150 Cel;
1552200168
Molex
WIRE AND CABLE;
PAP-06V-S
J S T Mfg
PAP-06V-S by J S T Mfg is a 6-contact BOARD CONNECTOR with 94V-0 UL Flammability Code. It has FEMALE contacts, CRIMP termination, and comes WITH CABLE ASSEMBLY for CABLE mounting applications.
C0805C104K5RACTU
KEMET Corporation
KEMET C0805C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring compact size and reliable performance.
2N7002-T1-E3
Vishay Intertechnology's 2N7002-T1-E3 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. With ENHANCEMENT MODE operation, this GULL WING transistor is ideal for small outline surface mount designs up to 150°C.
BSS138NH6327XTSA2
Infineon Technologies
BSS138NH6327XTSA2 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for small signal applications. Operating in Enhancement Mode, it has 0.36W Power Dissipation and 3.5 ohm Drain-Source Resistance. With Gull Wing terminals and AEC-Q101 reference standard, it's suitable for automotive electronics due to its high temperature range of -55 to 150 °C.
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL;
Excel (Suzhou) Semiconductor
0462-201-16141
TE Connectivity
TE Connectivity's 0462-201-16141 is a CRIMP terminal with MACHINED contact design. It operates b/w -55 to 125 °C, suitable for wire gauges from 20 to 16 AWG. With a rated current of 13A, it is ideal for applications requiring FEMALE ROUND PIN-SOCKET contacts.
MX25R3235FM1IL0
Macronix
Macronix's MX25R3235FM1IL0 is a 32Mb NOR Flash Memory with SPI interface, operating at 80MHz. It features 100K Write/Erase cycles and operates in industrial temperature range (-40 to 85°C). Ideal for applications requiring high-speed data transfer and reliable non-volatile memory storage.
MT29F2G01ABAGDWB-IT:GTR
Micron Technology
FLASH; Programming Voltage (V): 3.3; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Type: SLC NAND TYPE;
S29GL064S70TFI020
Spansion
FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Programming Voltage (V): 3;
AT45DB321D-SU
Adesto Technologies
FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;
W25Q64JVZPIQ
Winbond Electronics
Winbond Electronics' W25Q64JVZPIQ is a 3.3V NOR flash memory with 8Mx8 organization, SPI serial bus type, and 133MHz clock frequency. Ideal for industrial applications requiring high endurance of 100K write/erase cycles, it offers a compact package style with small outline and very thin profile for space-constrained designs.
S29GL064S70TFI010
FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
S25FL128SAGNFI000
Cypress Semiconductor
FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; JESD-609 Code: e3;
AT25SF161B-SSHD-T
Dialog Semiconductor
FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Length: 4.925 mm;
MTFC32GAZAQHD-IT
Micron Technology's MTFC32GAZAQHD-IT is a 32GX8 NAND flash memory with 34359738368 words capacity. Operating in synchronous mode, it has a very thin profile and fine pitch package style. With a temperature range of -40 to 95 °C, it is suitable for applications requiring high-density memory storage and fast data access.
S29GL128P90FFIR20
FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;
N25Q032A13ESC40F
Micron Technology's N25Q032A13ESC40F is a NOR flash memory with 32Mx1 organization, operating at 3V. It offers a max clock frequency of 108MHz and endurance of 100K write/erase cycles. Ideal for industrial applications requiring high-speed synchronous operation and reliable data storage in compact designs.
AT45DB641E-MHN-T
FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-N8;
SST26VF016BT-104I/SN
SST26VF016BT-104I/SN by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock freq., SPI serial bus. Ideal for industrial applications requiring 100000 write/erase cycles, with -40 to 85°C temp range and AEC-Q100 screening level.
S29JL064J70TFI000
S29JL064J70TFI000 by Infineon Technologies is a NOR flash memory with 4MX16 organization, operating at 3V. It features synchronous operation, 16 sectors of 8K/64K words each, and a max access time of 70ns. Ideal for industrial applications requiring fast and reliable non-volatile memory storage.
AT45DB641E-SHN-T
Renesas Electronics
Renesas Electronics' AT45DB641E-SHN-T is a 64M Flash Memory IC with 85MHz clock frequency, operating from -40 to 85°C. It features synchronous operation, serial interface, and 1.8V programming voltage. Ideal for industrial applications requiring high-speed data storage in compact designs.
S71WS256PC0HH3YR0
FLASH; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: TFBGA; Package Shape: RECTANGULAR; Organization: 16MX16;
M25P64-VME6G
FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: HVSON; Package Shape: RECTANGULAR; Terminal Pitch: 1.27 mm;
AT25SF161B-SSHD-T by Renesas Electronics is a NOR type flash memory with 2Mx8 organization, operating at up to 108MHz clock frequency. It offers 100000 write/erase cycles and has a serial bus type of SPI. Ideal for industrial applications requiring high-speed data storage in compact devices.
S25FL256SAGNFI003
FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Boot Block: BOTTOM;
S25FL256SAGNFI010
FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Maximum Supply Current: 100 mA;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
MT29F16G08ABACAWP-ITZ:CTR
Micron Technology's MT29F16G08ABACAWP-ITZ:CTR is a 3.3V SLC NAND Flash Memory with 2GX8 organization, operating from -40 to 85 °C. It features a small outline package, parallel interface, and industrial temperature grade suitable for embedded systems and data storage applications.
MT29F2G08ABAEAWP-IT:E
Micron Technology's MT29F2G08ABAEAWP-IT:E is a 256MX8 SLC NAND Flash Memory with 2K sectors and 100,000 Write/Erase cycles. Operating at 3.3V, it offers industrial-grade reliability for applications requiring high endurance and fast data access. With a compact form factor of 18.4mm x 12mm and low standby current of 0.0001A, it is ideal for embedded systems in harsh environments.
MT29F16G08ABACAWP-ITZ:C
MT29F16G08ABACAWP-ITZ:C by Micron Technology is a 3.3V SLC NAND Flash Memory with 2GX8 organization, operating from -40 to 85 °C. It has a memory density of 17179869184 bit and is suitable for industrial applications requiring reliable, high-speed data storage in compact devices.
MT29F2G08ABAEAWP-IT:ETR
Micron Technology's MT29F2G08ABAEAWP-IT:ETR is a 256MX8 SLC NAND flash memory with 2K sectors and 100,000 write/erase cycles. Operating at 3.3V, it offers industrial-grade temperature range (-40 to 85°C) for applications requiring high endurance and reliability in small outline packages.
MT29F1G08ABAEAWP-IT:E
Micron Technology's MT29F1G08ABAEAWP-IT:E is a 3.3V SLC NAND Flash Memory with 128Mx8 organization, operating from -40 to 85°C. It features a small outline package, parallel interface, and industrial temperature grade suitable for various embedded applications.
MT29F8G08ABABAWP-IT:B
Micron Technology's MT29F8G08ABABAWP-IT:B is a 3.3V SLC NAND flash memory with 1GX8 organization, 2K sectors, and 4K page size. It operates in industrial temperatures (-40 to 85 °C) with 100000 write/erase cycles endurance. Ideal for applications requiring high-density parallel memory storage.
MT29F8G08ABABAWP-ITX:B
Micron Technology's MT29F8G08ABABAWP-ITX:B is an 8Gb SLC NAND flash memory with 3.3V supply voltage, operating from -40 to 85°C. It has a memory density of 8.58 Gb and is suitable for industrial applications requiring high reliability and performance in a surface-mount package.
MT29F128G08AJAAAWP-ITZ:A
Micron Technology's MT29F128G08AJAAAWP-ITZ:A is a 3.3V MLC NAND Flash Memory with 16GX8 organization, operating from -40 to 85 °C. It has a memory density of 137.4Gb and is suitable for industrial applications requiring high-speed parallel data storage.
MT29F2G16ABAEAWP:ETR
Micron Technology's MT29F2G16ABAEAWP:ETR is a 3.3V SLC NAND flash memory with 128Mx16 organization and 2147483648-bit memory density. Operating in asynchronous mode, it has a temperature range of 0-70°C and is suitable for commercial applications requiring high-speed parallel memory access.
MT29F1G08ABADAWP-IT:DTR
Micron Technology's MT29F1G08ABADAWP-IT:DTR is a 128MX8 SLC NAND flash memory with 1073741824-bit density. Operating at 3.3V, it has an industrial temperature grade and supports parallel mode. With a compact form factor of 18.4mm x 12mm x 1.2mm, it is ideal for high-performance embedded applications requiring reliable non-volatile storage.
MT29F16G08ABACAWP-AAT:C
FLASH; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Screening Level: AEC-Q100; Organization: 2GX8;
MT29F1G08ABADAWP-IT:D
Micron Technology's MT29F1G08ABADAWP-IT:D is a 3.3V SLC NAND flash memory with 128Mx8 organization, operating in industrial temperature range. It features 2K page size, 128K sector size, and parallel interface. Ideal for applications requiring fast access times and high memory density.
MT29F1G08ABADAWP-ITX:D
Micron Technology's MT29F1G08ABADAWP-ITX:D is a 128Mx8 SLC NAND flash memory with 3.3V programming voltage, operating in industrial temperature range. It features 2K page size, 128K sector size, and parallel interface. Ideal for applications requiring high-speed data storage and retrieval in harsh environments.
MT29F4G08ABADAWP-IT:D
MT29F4G08ABADAWP-IT:D by Micron Technology is a 512MX8 SLC NAND flash memory with 3.3V programming voltage and 2K page size. Ideal for industrial applications, it offers fast access time of 25ns, low standby current of 0.0001A, and operates in a temperature range from -40 to 85°C.
MT29F1G08ABADAWP-ITX:DTR
Micron Technology's MT29F1G08ABADAWP-ITX:DTR is a 128MX8 SLC NAND flash memory with 1073741824 bit density. Operating at 3.3V, it has an industrial temperature grade and supports asynchronous mode. This rectangular package with 48 terminals is suitable for various applications requiring high-speed parallel memory access.
MT29F8G08ABACAWP-IT:CTR
MT29F8G08ABACAWP-IT:CTR by Micron Technology is a 3.3V SLC NAND flash memory with 1GX8 organization, offering 8K sectors and 2K page size. Operating in industrial temperature range (-40 to 85 °C), it has a max endurance of 100k cycles. Ideal for applications requiring high-density, reliable storage solutions.
MT29F128G08AJAAAWP-ITZ:ATR
FLASH; Type: MLC NAND TYPE; Programming Voltage (V): 2.7; JESD-609 Code: e3; Terminal Finish: MATTE TIN;
MT29F2G08ABAGAWP-IT:G
Micron Technology's MT29F2G08ABAGAWP-IT:G is an industrial-grade SLC NAND flash memory with 256Mx8 organization, operating from -40 to 85°C. It offers a memory density of 2147483648 bits and operates in asynchronous mode. Ideal for applications requiring high reliability and performance in harsh environments.
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
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12,000 In-Stock
Total price ≈ $80,197.29
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