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S29GL01GS10DHI010

Infineon Technologies

S29GL01GS10DHI010 by Infineon Technologies

S29GL01GS10DHI010 by Infineon Technologies is a 128Mx8 NAND flash memory with 1K sectors, operating at 3V. It features a 32-word page size, 100,000 write/erase cycles endurance, and asynchronous mode. Ideal for applications requiring high-density data storage in devices with low power consumption.

Median Price

$9.442

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 129 parts In-Stock

1+ parts

$8.354

100+ parts

-

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129

$8.354

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Chip1Stop

Japan . 260 parts In-Stock

1+ parts

$10.900

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-

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260

$10.900

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Mouser Electronics

USA . 639 parts In-Stock

1+ parts

$16.260

100+ parts

$13.920

1k+ parts

$13.100

10k+ parts

-

639

$16.260

$13.920

$13.100

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Flip Electronics (Authorized)

USA . 4,034 parts In-Stock

1+ parts

-

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4,034

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DigiKey

USA . 3,093 parts In-Stock

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-

100+ parts

$6.510

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3,093

-

$6.510

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Rochester

USA . 2,827 parts In-Stock

1+ parts

-

100+ parts

$10.530

1k+ parts

$9.420

10k+ parts

$8.860

2,827

-

$10.530

$9.420

$8.860

Verical

USA . 2,600 parts In-Stock

1+ parts

-

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10k+ parts

$7.518

2,600

-

-

-

$7.518

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 61 parts In-Stock

1+ parts

$9.281

100+ parts

-

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61

$9.281

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-

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Digiode

USA . 637 parts In-Stock

1+ parts

$9.424

100+ parts

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637

$9.424

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TME

Poland . 4,624 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$14.561

10k+ parts

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4,624

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-

$14.561

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Flip Electronics

USA . 3,534 parts In-Stock

1+ parts

-

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3,534

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DigiKey Marketplace

USA . 2,743 parts In-Stock

1+ parts

-

100+ parts

$9.860

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2,743

-

$9.860

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Vyrian

USA . 1,594 parts In-Stock

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1,594

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IBS Electronics

USA . 1,150 parts In-Stock

1+ parts

-

100+ parts

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$15.231

10k+ parts

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1,150

-

-

$15.231

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Cyclops Electronics Ltd

UK . 527 parts In-Stock

1+ parts

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527

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 33,927 parts In-Stock

1+ parts

$5.201

100+ parts

-

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33,927

$5.201

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Semicontronic

India . 1,549 parts In-Stock

1+ parts

$6.580

100+ parts

$6.416

1k+ parts

$6.383

10k+ parts

-

1,549

$6.580

$6.416

$6.383

-

Corphita

USA . 597 parts In-Stock

1+ parts

$8.928

100+ parts

-

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597

$8.928

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Continental Prestige Electronics

USA . 6,191 parts In-Stock

1+ parts

$9.281

100+ parts

-

1k+ parts

-

10k+ parts

$9.095

6,191

$9.281

-

-

$9.095

Modulus Dynamics

Lithuania . 3,037 parts In-Stock

1+ parts

$9.935

100+ parts

$9.538

1k+ parts

$9.140

10k+ parts

-

3,037

$9.935

$9.538

$9.140

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Corohmni

South Africa . 182 parts In-Stock

1+ parts

$9.935

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182

$9.935

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Advanced Electronics

New Zealand . 900 parts In-Stock

1+ parts

$10.233

100+ parts

$9.721

1k+ parts

$9.721

10k+ parts

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900

$10.233

$9.721

$9.721

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Component Stockers USA

USA . 2,250 parts In-Stock

1+ parts

$10.380

100+ parts

$8.990

1k+ parts

$8.630

10k+ parts

-

2,250

$10.380

$8.990

$8.630

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Argo Parts USA

USA . 4,954 parts In-Stock

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4,954

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Kepictronics

USA . 1,110 parts In-Stock

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Bastille Electronics

Australia . 976 parts In-Stock

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976

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Perfect Parts

USA . 553 parts In-Stock

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553

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Futuretech Components

Singapore . 210 parts In-Stock

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210

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Overview

Discover the S29GL01GS10DHI010 by Infineon Technologies, a top-quality flash memory solution designed to meet your storage needs. With Infineon's reputation for excellence in manufacturing, this product offers unmatched reliability and performance. Ideal for a wide range of applications, this flash memory provides fast access times and high endurance, ensuring your data is always secure. Experience the value and benefits of Infineon's S29GL01GS10DHI010, where quality meets innovation to enhance your device's functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protects the flash memory chip inside, making it a reliable choice for long-term usage.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster data transfer speeds, optimizing performance.

Nominal Supply Voltage: 3V

Stable supply voltage ensures consistent performance and reliability.

Organization: 128MX8

High organization capacity allows for efficient storage and retrieval of data.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation, making it energy-efficient.

Endurance: 100000 Write/Erase Cycles

High endurance level ensures longevity and reliability of the flash memory.

Technical Specifications

Flash Memory S29GL01GS10DHI010 attributes and parameters. Explore more Flash Memory devices from Infineon Technologies

Specs

Maximum Access Time:

100 ns

Additional Features:

20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES

Alternate Memory Width:

1

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

Minimum Data Retention Time:

2

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

S-PBGA-B64

JESD-609 Code:

e1

Length:

9 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Sectors/Size:

1K

No. of Terminals:

64

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Page Size (words):

32

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Ready or Busy:

YES

Maximum Seated Height:

1.4 mm

Sector Size (Words):

128K

Maximum Standby Current:

.0001 Amp

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

YES

Type:

NAND TYPE

Width:

9 mm

Trade Compliance

S29GL01GS10DHI010 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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