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M25P64-VME6G

Micron Technology

M25P64-VME6G by Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: HVSON; Package Shape: RECTANGULAR; Terminal Pitch: 1.27 mm;

Median Price

$8.918

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics

USA . 2 parts In-Stock

1+ parts

$2.457

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-

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2

$2.457

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Component Electronics Inc.

Canada . 36 parts In-Stock

1+ parts

$15.380

100+ parts

$11.540

1k+ parts

$10.000

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36

$15.380

$11.540

$10.000

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Chip Stock

USA . 13,600 parts In-Stock

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13,600

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Digiode

USA . 5,739 parts In-Stock

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5,739

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Anansix

USA . 1,537 parts In-Stock

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1,537

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Vyrian

USA . 1,478 parts In-Stock

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Bas Electronics GmbH & Co. KG

Germany . 419 parts In-Stock

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ComSIT Distribution GmbH

Germany . 154 parts In-Stock

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Greenchips

USA . 87 parts In-Stock

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SIE Connect GmbH - GreenChips

Germany . 87 parts In-Stock

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87

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Prism Electronics

USA . 72 parts In-Stock

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72

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Legend Electronics Inc.

USA . 55 parts In-Stock

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55

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Sensible Micro Corp

USA . 47 parts In-Stock

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47

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Nova Conductors

Japan . 39 parts In-Stock

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Odi Ramu Company

Canada . 20 parts In-Stock

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20

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Bristol Electronics

USA . 19 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 3,005 parts In-Stock

1+ parts

$2.130

100+ parts

-

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3,005

$2.130

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Component Stockers USA

USA . 644 parts In-Stock

1+ parts

$3.880

100+ parts

$3.690

1k+ parts

$3.570

10k+ parts

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644

$3.880

$3.690

$3.570

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Corohmni

South Africa . 241 parts In-Stock

1+ parts

$4.013

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241

$4.013

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IDEA Electronic Components Group

UK . 1,192 parts In-Stock

1+ parts

$4.861

100+ parts

-

1k+ parts

$4.375

10k+ parts

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1,192

$4.861

-

$4.375

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Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$5.629

100+ parts

$5.348

1k+ parts

$5.348

10k+ parts

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150

$5.629

$5.348

$5.348

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MKK Technologies

India . 1,034 parts In-Stock

1+ parts

$9.141

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1,034

$9.141

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DigiPath Technology Company

USA . 1,034 parts In-Stock

1+ parts

$9.141

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1,034

$9.141

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AZTECH Wire

Italy . 731 parts In-Stock

1+ parts

$13.390

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731

$13.390

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Semicontronic

India . 960 parts In-Stock

1+ parts

$20.000

100+ parts

$19.500

1k+ parts

$19.400

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960

$20.000

$19.500

$19.400

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Continental Prestige Electronics

USA . 6,333 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,082 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,388 parts In-Stock

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3,388

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S.R.D Solutions

India . 3,000 parts In-Stock

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Kepictronics

USA . 2,080 parts In-Stock

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Argo Parts USA

USA . 1,691 parts In-Stock

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Corphita

USA . 1,314 parts In-Stock

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Bastille Electronics

Australia . 800 parts In-Stock

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800

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Parana Technologies

USA . 686 parts In-Stock

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$5.812

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686

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EMSNET (Excess)

USA . 98 parts In-Stock

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98

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Legend Electronics Inc. (Excess)

USA . 45 parts In-Stock

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45

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Speed Components Ltd (Excess)

Israel . 45 parts In-Stock

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Computer Components Inc. - USA

USA . 18 parts In-Stock

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Perfect Parts

USA . 16 parts In-Stock

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Technical Specifications

Flash Memory M25P64-VME6G attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

50 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-XDSO-N8

Length:

8 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

16

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

6 mm

Maximum Write Cycle Time (tWC):

15 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M25P64-VME6G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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