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SST26VF016B-104I/SN-RN

Microchip Technology

SST26VF016B-104I/SN-RN by Microchip Technology

SST26VF016B-104I/SN-RN by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock freq., SPI serial bus. Ideal for industrial applications requiring high-speed synchronous operation and 100000 write/erase cycles. Operating temp range -40 to 85 °C with AEC-Q100 screening level.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,112 parts In-Stock

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1,112

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Nova Conductors

Japan . 550 parts In-Stock

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550

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Distributors (Availability)

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Semicontronic

India . 1,250 parts In-Stock

1+ parts

$2.000

100+ parts

$1.950

1k+ parts

$1.940

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-

1,250

$2.000

$1.950

$1.940

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Aztec Data Supply Inc.

USA . 2,029 parts In-Stock

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$2.520

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$2.520

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Corohmni

South Africa . 310 parts In-Stock

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$3.245

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310

$3.245

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$4.037

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$3.835

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$3.835

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40

$4.037

$3.835

$3.835

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Ampacity Inc.

Singapore . 786 parts In-Stock

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$9.000

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786

$9.000

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AZTECH Wire

Italy . 377 parts In-Stock

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$10.452

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377

$10.452

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Continental Prestige Electronics

USA . 4,574 parts In-Stock

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Marpe Global Electronics

Taiwan . 4,239 parts In-Stock

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QualityLine Systems

Poland . 4,239 parts In-Stock

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XL Components Corporation

Australia . 4,239 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Argo Parts USA

USA . 2,940 parts In-Stock

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Bastille Electronics

Australia . 500 parts In-Stock

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Overview

Unlock the power of reliable and high-performance flash memory with the Microchip Technology SST26VF016B-104I/SN-RN. As a trusted leader in the industry, Microchip Technology delivers top-quality products that meet the highest standards. Ideal for a wide range of applications, this flash memory offers customers unparalleled value, benefits, and advantages. With a durable package body material, advanced features like synchronous operation, and impressive performance specifications, this product is a game-changer for any project requiring fast and efficient memory solutions. Choose Microchip Technology for excellence you can trust.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the product lightweight and durable, ideal for portable devices.

Surface Mount: YES

The surface mount feature enables easy and efficient installation on circuit boards, saving valuable space and simplifying assembly.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this flash memory is suitable for industrial applications that require reliable performance in harsh environments.

Memory Density: 16777216 bit

The high memory density of 16777216 bits allows for storing a large amount of data in a compact form factor, making it suitable for applications with high storage requirements.

Endurance: 100000 Write/Erase Cycles

The high endurance of 100,000 write/erase cycles ensures the reliability and longevity of the flash memory, making it suitable for demanding applications.

Technical Specifications

Flash Memory SST26VF016B-104I/SN-RN attributes and parameters. Explore more Flash Memory devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

104 MHz

Minimum Data Retention Time:

100

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

Length:

4.9 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX1

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.23

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Programming Voltage (V):

3

Screening Level:

AEC-Q100; TS 16949

Maximum Seated Height:

1.75 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000045 Amp

Maximum Supply Current:

25 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Type:

NOR TYPE

Width:

3.9 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

SST26VF016B-104I/SN-RN Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.1.A

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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