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MT28EW512ABA1HPN-0SIT

Micron Technology

MT28EW512ABA1HPN-0SIT by Micron Technology

MT28EW512ABA1HPN-0SIT by Micron Technology is a 32MX16 flash memory IC with 33554432 words. It operates at 3V, has a very thin profile, and offers a max access time of 95ns. Ideal for industrial applications requiring high-density parallel memory solutions.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 23,100 parts In-Stock

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Vyrian

USA . 2,968 parts In-Stock

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Digiode

USA . 1,419 parts In-Stock

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Nova Conductors

Japan . 450 parts In-Stock

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450

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Corohmni

South Africa . 150 parts In-Stock

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$2.004

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150

$2.004

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Aztec Data Supply Inc.

USA . 191 parts In-Stock

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$2.658

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AZTECH Wire

Italy . 498 parts In-Stock

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$9.600

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Ampacity Inc.

Singapore . 1,055 parts In-Stock

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$19.000

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$19.000

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Continental Prestige Electronics

USA . 6,097 parts In-Stock

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Argo Parts USA

USA . 2,655 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Microchip USA

USA . 482 parts In-Stock

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Corphita

USA . 88 parts In-Stock

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Overview

Discover the perfect solution for your flash memory needs with the MT28EW512ABA1HPN-0SIT by Micron Technology. This high-quality product offers unparalleled reliability and performance, thanks to Micron's reputation as a top manufacturer in the industry. Ideal for a wide range of applications, this flash memory device provides exceptional value and benefits to customers looking for fast access times, industrial-grade temperature tolerance, and a compact design. Upgrade your storage capabilities with the MT28EW512ABA1HPN-0SIT and experience the advantages of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that protects the internal components of the flash memory.

Nominal Supply Voltage / Vsup (V): 3

Optimal supply voltage ensures reliable performance and longevity of the flash memory.

Maximum Operating Temperature: 85 °C

Allows the flash memory to operate efficiently even in high temperature environments.

Minimum Operating Temperature: -40 °C

Capable of functioning in extreme cold conditions without compromising performance.

Memory Density: 536870912 bit

High memory density allows for storing a large amount of data in a compact form factor.

Maximum Access Time: 95 ns

Fast access time ensures quick data retrieval and processing, enhancing overall performance.

Technical Specifications

Flash Memory MT28EW512ABA1HPN-0SIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

95 ns

Alternate Memory Width:

8

JESD-30 Code:

R-PBGA-B56

Length:

9 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

56

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

7 mm

Trade Compliance

MT28EW512ABA1HPN-0SIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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