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MT29F1G08ABADAWP:D

Micron Technology

MT29F1G08ABADAWP:D by Micron Technology

Micron Technology's MT29F1G08ABADAWP:D is a 3.3V SLC NAND Flash Memory with 128Mx8 organization, operating in asynchronous mode. It features a page size of 2K words and sector size of 128K words, suitable for commercial applications requiring fast access times and low standby current.

Median Price

$3.300

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Tomark Electronics Ltd

UK . 880 parts In-Stock

1+ parts

$3.300

100+ parts

-

1k+ parts

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10k+ parts

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880

$3.300

-

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Chip Stock

USA . 11,700 parts In-Stock

1+ parts

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11,700

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Cyclops Electronics Ltd

UK . 6,000 parts In-Stock

1+ parts

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6,000

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-

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Vyrian

USA . 4,608 parts In-Stock

1+ parts

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4,608

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Semi Source

USA . 3,338 parts In-Stock

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3,338

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Holdelec - ElecDif-Pro

France . 2,667 parts In-Stock

1+ parts

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2,667

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-

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Bristol Electronics

USA . 1,407 parts In-Stock

1+ parts

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1,407

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Digiode

USA . 1,140 parts In-Stock

1+ parts

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1,140

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Nova Conductors

Japan . 900 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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900

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Goldney Electronics S.L.

Spain . 839 parts In-Stock

1+ parts

-

100+ parts

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839

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Connect4Technologies Inc.

Canada . 184 parts In-Stock

1+ parts

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100+ parts

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184

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Speed Components Ltd

Israel . 55 parts In-Stock

1+ parts

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55

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Infinite Electronics LLP

India . 27 parts In-Stock

1+ parts

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27

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Cogito LLC

Ukraine . 6 parts In-Stock

1+ parts

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6

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Sunrise Surplus Inc.

USA . 4 parts In-Stock

1+ parts

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100+ parts

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4

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 2,098 parts In-Stock

1+ parts

$4.120

100+ parts

-

1k+ parts

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10k+ parts

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2,098

$4.120

-

-

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Corohmni

South Africa . 190 parts In-Stock

1+ parts

$5.283

100+ parts

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190

$5.283

-

-

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Andel Nordic

Denmark . 1,664 parts In-Stock

1+ parts

$7.627

100+ parts

-

1k+ parts

$7.322

10k+ parts

$7.322

1,664

$7.627

-

$7.322

$7.322

AZTECH Wire

Italy . 826 parts In-Stock

1+ parts

$8.685

100+ parts

-

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10k+ parts

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826

$8.685

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-

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Semicontronic

India . 1,171 parts In-Stock

1+ parts

$10.000

100+ parts

$9.750

1k+ parts

$9.700

10k+ parts

-

1,171

$10.000

$9.750

$9.700

-

Ampacity Inc.

Singapore . 208 parts In-Stock

1+ parts

$17.000

100+ parts

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208

$17.000

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RC Electronics

USA . 34,312 parts In-Stock

1+ parts

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34,312

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Continental Prestige Electronics

USA . 6,413 parts In-Stock

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6,413

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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5,000

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Argo Parts USA

USA . 3,700 parts In-Stock

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3,700

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S.R.D Solutions

India . 2,425 parts In-Stock

1+ parts

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2,425

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Advanced Electronics

New Zealand . 2,316 parts In-Stock

1+ parts

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2,316

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A-Z Elektronik GmbH

Germany . 1,958 parts In-Stock

1+ parts

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1,958

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Corphita

USA . 1,513 parts In-Stock

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1,513

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Microchip USA

USA . 260 parts In-Stock

1+ parts

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260

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Bastille Electronics

Australia . 100 parts In-Stock

1+ parts

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100

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Kepictronics

USA . 100 parts In-Stock

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100

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ChipstoGo Electronic ltd

UK . 48 parts In-Stock

1+ parts

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48

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-

Overview

Upgrade your device with the MT29F1G08ABADAWP:D by Micron Technology, a high-quality flash memory solution that guarantees reliability and performance. Designed with precision by a leading manufacturer in the industry, this product offers seamless integration, fast access times, and low power consumption. Ideal for a wide range of applications, from consumer electronics to industrial systems, this compact yet powerful memory chip ensures optimal functionality and efficiency. Stay ahead of the game with Micron Technology's innovative memory solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy installation on a circuit board, saving time and effort in assembly.

Operating Mode: ASYNCHRONOUS

Enables data transfer in a non-simultaneous manner, which can improve overall system performance.

Nominal Supply Voltage: 3.3V

Compatible with standard voltage levels, making it easy to integrate into various systems.

Memory Density: 1073741824 bit

Provides a large memory capacity for storing a significant amount of data, ideal for various applications.

Technical Specifications

Flash Memory MT29F1G08ABADAWP:D attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

25 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Sectors/Size:

1K

No. of Terminals:

48

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Page Size (words):

2K

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Programming Voltage (V):

3.3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

128K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

SLC NAND TYPE

Width:

12 mm

Trade Compliance

MT29F1G08ABADAWP:D Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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