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MT28EW512ABA1HPC-0AAT

Micron Technology

MT28EW512ABA1HPC-0AAT by Micron Technology

MT28EW512ABA1HPC-0AAT by Micron Technology is a 32MX16 FLASH Memory IC with 536870912 bit memory density. Operating at 105 ns access time, it has a supply voltage range of 2.7V to 3.6V and supports asynchronous mode. Ideal for industrial applications requiring high-speed data storage in compact form factors.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 21,900 parts In-Stock

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21,900

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Vyrian

USA . 4,150 parts In-Stock

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4,150

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Digiode

USA . 1,728 parts In-Stock

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1,728

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Nova Conductors

Japan . 150 parts In-Stock

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150

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Distributors (Availability)

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Semicontronic

India . 340 parts In-Stock

1+ parts

$1.000

100+ parts

$0.975

1k+ parts

$0.970

10k+ parts

-

340

$1.000

$0.975

$0.970

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Aztec Data Supply Inc.

USA . 2,297 parts In-Stock

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$2.970

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2,297

$2.970

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Corohmni

South Africa . 751 parts In-Stock

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$3.392

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751

$3.392

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Ampacity Inc.

Singapore . 691 parts In-Stock

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$4.000

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691

$4.000

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AZTECH Wire

Italy . 814 parts In-Stock

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$16.313

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814

$16.313

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RC Electronics

USA . 14,053 parts In-Stock

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14,053

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A-Z Elektronik GmbH

Germany . 6,659 parts In-Stock

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6,659

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Argo Parts USA

USA . 4,145 parts In-Stock

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Continental Prestige Electronics

USA . 3,059 parts In-Stock

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3,059

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Corphita

USA . 1,463 parts In-Stock

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1,463

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Bastille Electronics

Australia . 300 parts In-Stock

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300

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Microchip USA

USA . 151 parts In-Stock

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151

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Overview

Discover the cutting-edge MT28EW512ABA1HPC-0AAT by Micron Technology, a top-tier Flash Memory device perfect for industrial applications. With high-quality manufacturing and AEC-Q100 screening level, this product offers reliability and durability like no other. Boasting a wide range of benefits, including low profile package style and parallel operation mode, this memory chip provides seamless performance in harsh conditions. Trust Micron Technology to deliver top-notch products that exceed expectations and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this flash memory lightweight and durable, ideal for portable devices.

Surface Mount: YES

Being surface mount compatible allows for easy and efficient installation on circuit boards, saving space and simplifying manufacturing processes.

Screening Level: AEC-Q100

AEC-Q100 screening level ensures high quality and reliability, making this flash memory suitable for automotive applications where durability is crucial.

Package Shape: RECTANGULAR

The rectangular package shape offers compatibility with standard circuit board layouts, making integration seamless and hassle-free.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for fast and efficient data retrieval, enhancing performance in data-intensive applications.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V ensures compatibility with a wide range of devices, offering versatility and flexibility in design.

No. of Terminals: 64

With 64 terminals, this flash memory provides ample connectivity options for seamless integration into complex circuitry.

Package Style (Meter): GRID ARRAY, LOW PROFILE

The grid array, low profile package style offers a compact and space-saving design, perfect for applications with limited space constraints.

Alternate Memory Width: 8

The availability of alternate memory width options allows for flexibility in data storage configurations, catering to a variety of project requirements.

Maximum Operating Temperature: 105 °C

With a maximum operating temperature of 105°C, this flash memory is suitable for use in harsh environments with elevated temperatures.

Technical Specifications

Flash Memory MT28EW512ABA1HPC-0AAT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

105 ns

Alternate Memory Width:

8

JESD-30 Code:

R-PBGA-B64

Length:

13 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

64

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

3

Screening Level:

AEC-Q100

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

11 mm

Trade Compliance

MT28EW512ABA1HPC-0AAT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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