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MT28EW128ABA1LPC-0SIT

Micron Technology

MT28EW128ABA1LPC-0SIT by Micron Technology

MT28EW128ABA1LPC-0SIT by Micron Technology is a NOR type Flash Memory with 8Mx16 organization and 8388608 words. It operates at 3V, has a memory density of 134217728 bits, and offers fast access time of 70ns. Ideal for industrial applications requiring high-speed parallel memory with low power consumption.

Median Price

$7.897

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 2,614 parts In-Stock

1+ parts

$3.690

100+ parts

-

1k+ parts

-

10k+ parts

-

2,614

$3.690

-

-

-

Mouser Electronics

USA . 5,515 parts In-Stock

1+ parts

$6.870

100+ parts

$5.470

1k+ parts

$5.090

10k+ parts

$5.000

5,515

$6.870

$5.470

$5.090

$5.000

Arrow

USA . 842 parts In-Stock

1+ parts

$7.897

100+ parts

-

1k+ parts

-

10k+ parts

-

842

$7.897

-

-

-

Newark

USA . 725 parts In-Stock

1+ parts

$9.150

100+ parts

$6.540

1k+ parts

$5.290

10k+ parts

-

725

$9.150

$6.540

$5.290

-

Element14

Singapore . 2,618 parts In-Stock

1+ parts

$922.870

100+ parts

$553.730

1k+ parts

$489.120

10k+ parts

-

2,618

$922.870

$553.730

$489.120

-

EBV Elektronik

Germany . 2,208 parts In-Stock

1+ parts

-

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2,208

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Verical

USA . 842 parts In-Stock

1+ parts

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842

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-

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 50 parts In-Stock

1+ parts

$3.506

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$3.506

-

-

-

Chip Stock

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

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20,000

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Sensible Micro Corp

USA . 4,110 parts In-Stock

1+ parts

-

100+ parts

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4,110

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-

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Cyclops Electronics Ltd

UK . 2,952 parts In-Stock

1+ parts

-

100+ parts

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2,952

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-

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NAC Semi

USA . 2,208 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$7.540

2,208

-

-

-

$7.540

Vyrian

USA . 2,135 parts In-Stock

1+ parts

-

100+ parts

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2,135

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Bristol Electronics

USA . 380 parts In-Stock

1+ parts

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100+ parts

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380

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

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50

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NexGen Digital

USA . 17 parts In-Stock

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17

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,901 parts In-Stock

1+ parts

$3.140

100+ parts

-

1k+ parts

-

10k+ parts

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1,901

$3.140

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-

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Corphita

USA . 1,652 parts In-Stock

1+ parts

$3.321

100+ parts

-

1k+ parts

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10k+ parts

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1,652

$3.321

-

-

-

Aztec Data Supply Inc.

USA . 50 parts In-Stock

1+ parts

$3.860

100+ parts

-

1k+ parts

-

10k+ parts

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50

$3.860

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-

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Corohmni

South Africa . 15 parts In-Stock

1+ parts

$4.473

100+ parts

-

1k+ parts

-

10k+ parts

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15

$4.473

-

-

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Continental Prestige Electronics

USA . 2,647 parts In-Stock

1+ parts

$6.950

100+ parts

$5.010

1k+ parts

-

10k+ parts

-

2,647

$6.950

$5.010

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Perfect Parts

USA . 20,308 parts In-Stock

1+ parts

-

100+ parts

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20,308

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Argo Parts USA

USA . 4,142 parts In-Stock

1+ parts

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4,142

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A-Z Elektronik GmbH

Germany . 1,847 parts In-Stock

1+ parts

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1,847

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

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1,000

-

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Overview

Elevate your device's performance with the cutting-edge MT28EW128ABA1LPC-0SIT by Micron Technology. Renowned for its superior quality and reliability, this Flash Memory module is designed to meet the demands of industrial applications with a wide operating temperature range. With fast access times and high memory density, this product offers exceptional value by enhancing system efficiency and overall performance. Upgrade your technology with Micron Technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the flash memory, making it a reliable choice for long-term use.

Surface Mount: YES

Being surface mountable makes the installation and integration of this flash memory efficient and convenient in various electronic devices.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible and independent control of data transfer, providing efficient performance for the user.

Nominal Supply Voltage / Vsup (V): 3

The 3V supply voltage ensures compatibility with a wide range of devices and allows for efficient power consumption.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this flash memory can withstand high temperature conditions, suitable for industrial applications.

Memory IC Type: FLASH

Being a flash memory IC type, this product offers high-speed read and write operations, making it ideal for data storage and retrieval tasks.

Technical Specifications

Flash Memory MT28EW128ABA1LPC-0SIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

70 ns

Alternate Memory Width:

8

JESD-30 Code:

R-PBGA-B64

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

64

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

11 mm

Trade Compliance

MT28EW128ABA1LPC-0SIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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