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MTFC16GAPALBH-ITTR

Micron Technology

MTFC16GAPALBH-ITTR by Micron Technology

MTFC16GAPALBH-ITTR by Micron Technology is a 16GX8 NAND flash memory with 17179869184 words capacity. Operating at up to 200 MHz, it has a thin profile and fine pitch package style suitable for industrial applications. With a temperature range of -40 to 85 °C, it offers high-speed synchronous operation in a compact form factor.

Median Price

$20.044

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 34 parts In-Stock

1+ parts

$20.044

100+ parts

$18.308

1k+ parts

$18.308

10k+ parts

$18.308

34

$20.044

$18.308

$18.308

$18.308

Verical

USA . 34 parts In-Stock

1+ parts

$20.044

100+ parts

$18.308

1k+ parts

$18.308

10k+ parts

$18.308

34

$20.044

$18.308

$18.308

$18.308

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,959 parts In-Stock

1+ parts

$19.042

100+ parts

-

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1,959

$19.042

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Nova Conductors

Japan . 1,000 parts In-Stock

1+ parts

$27.772

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1,000

$27.772

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Sensible Micro Corp

USA . 80,000 parts In-Stock

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80,000

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Chip Stock

USA . 12,000 parts In-Stock

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12,000

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Vyrian

USA . 2,381 parts In-Stock

1+ parts

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2,381

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PC Components Company LLC

USA . 150 parts In-Stock

1+ parts

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150

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Bristol Electronics

USA . 132 parts In-Stock

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132

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 201 parts In-Stock

1+ parts

$4.790

100+ parts

-

1k+ parts

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-

201

$4.790

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Advanced Electronics

New Zealand . 300 parts In-Stock

1+ parts

$5.419

100+ parts

$5.148

1k+ parts

$5.148

10k+ parts

-

300

$5.419

$5.148

$5.148

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Corohmni

South Africa . 273 parts In-Stock

1+ parts

$5.504

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273

$5.504

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Semicontronic

India . 102 parts In-Stock

1+ parts

$17.040

100+ parts

$16.614

1k+ parts

$16.529

10k+ parts

-

102

$17.040

$16.614

$16.529

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Ampacity Inc.

Singapore . 34 parts In-Stock

1+ parts

$17.040

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34

$17.040

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Corphita

USA . 673 parts In-Stock

1+ parts

$18.040

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673

$18.040

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AZTECH Wire

Italy . 882 parts In-Stock

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$18.061

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882

$18.061

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Continental Prestige Electronics

USA . 1,392 parts In-Stock

1+ parts

$24.150

100+ parts

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$23.667

1,392

$24.150

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$23.667

Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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6,000

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

$27.217

1k+ parts

$26.384

10k+ parts

$25.828

2,000

-

$27.217

$26.384

$25.828

Argo Parts USA

USA . 1,683 parts In-Stock

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1,683

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Overview

Unlock the power of reliable and high-performance flash memory with the MTFC16GAPALBH-ITTR by Micron Technology. Designed with cutting-edge technology and top-quality materials, this NAND type memory card offers unparalleled speed and efficiency for industrial applications. With its 16GX8 organization and 17179869184 word capacity, this flash memory guarantees smooth operations at a maximum clock frequency of 200 MHz. Trust in Micron Technology to deliver superior products that elevate your work processes to new heights. Experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the product easy to handle and transport.

Surface Mount: YES

The surface mount design allows for easy installation and reduces the overall footprint of the product.

Package Shape: RECTANGULAR

The rectangular shape is space-efficient and allows for easy stacking or placement in tight spaces.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and data transmission, making the product reliable and efficient.

No. of Terminals: 153

With a high number of terminals, the product can handle complex data transfers and processing.

Package Style: GRID ARRAY, THIN PROFILE, FINE PITCH

This package style offers high density and optimal signal integrity, ideal for high-performance applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures the product can withstand harsh environmental conditions.

Organization: 16GX8

The organization of 16Gx8 allows for large storage capacity and efficient data retrieval.

Output Characteristics: 3-STATE

The 3-state output allows for flexibility in controlling data flow, enhancing versatility in various applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures the product can function reliably in extreme cold environments.

Terminal Finish: TIN SILVER COPPER

This terminal finish provides excellent conductivity and corrosion resistance, ensuring long-term performance.

Terminal Position: BOTTOM

The bottom terminal position simplifies installation and maintenance of the product.

Maximum Seated Height: 1.2 mm

The low seated height makes the product suitable for compact designs and space-constrained applications.

Maximum Clock Frequency (fCLK): 200 MHz

The high clock frequency enables fast data processing and transfer speeds.

Width: 11.5 mm

The compact width of the product allows for easy integration into various systems and devices.

Minimum Supply Voltage (Vsup): 2.7 V

The low minimum supply voltage helps in reducing power consumption and extends battery life.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time minimizes the risk of heat damage during installation or rework processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures proper soldering and reliability of the connections.

Type: NAND TYPE

The NAND type design offers high storage capacity and fast data transfer rates, making it ideal for data-intensive applications.

Length: 13 mm

The compact length of the product allows for flexibility in different installation scenarios.

Programming Voltage (V): 2.7

The low programming voltage simplifies programming and operation of the product.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliable performance in harsh conditions and industrial settings.

Technology: CMOS

The CMOS technology provides low power consumption and high-speed operation, making the product energy-efficient.

Parallel or Serial: PARALLEL

The parallel operation allows for simultaneous data processing, improving overall efficiency.

Terminal Form: BALL

The ball terminal form offers secure connections and easy installation in various systems.

No. of Words: 17179869184 words

The large number of words allows for extensive storage capacity, suitable for data-intensive applications.

Memory Width: 8

The memory width of 8 bits ensures efficient data processing and retrieval.

Terminal Pitch: 0.5 mm

The small terminal pitch allows for high-density packaging, saving valuable space in electronic devices.

No. of Words Code: 16G

The word code of 16G indicates the high memory capacity of the product, suitable for large data storage needs.

Maximum Supply Voltage (Vsup): 3.6 V

The high maximum supply voltage provides flexibility in powering the product and ensures stable operation.

Memory Density: 137438953472 bit

The high memory density offers ample storage space for data-intensive applications.

Memory IC Type: FLASH CARD

The flash card memory IC type allows for fast data access and high reliability, making it a popular choice for various applications.

Technical Specifications

Flash Memory MTFC16GAPALBH-ITTR attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

200 MHz

JESD-30 Code:

R-PBGA-B153

Length:

13 mm

Memory Density:

137438953472 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

17179869184 words

No. of Words Code:

16G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16GX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NAND TYPE

Width:

11.5 mm

Trade Compliance

MTFC16GAPALBH-ITTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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